CCS050M12CM2 VDS

1.2 kV
1.2kV, 50A Silicon Carbide RDS(on) (TJ = 25˚C) 25 mΩ
Six-Pack (Three Phase) Module EOFF (TJ = 150˚C) 0.6 mJ
Z-FETTM MOSFET and Z-RecTM Diode

Features Package
• Ultra Low Loss
• Zero Reverse Recovery Current
• Zero Turn-off Tail Current
• High-Frequency Operation
• Positive Temperature Coefficient on VF and VDS(on)
• Cu Baseplate, AlN DBC

System Benefits
• Enables Compact and Lightweight Systems
• High Efficiency Operation
• Ease of Transistor Gate Control
• Reduced Cooling Requirements
• Reduced System Cost

Applications
• Solar Inverters
Part Number Package Marking
• UPS and SMPS
• Induction Heating
• Regen Drives CCS050M12CM2 Six-Pack CCS050M12CM2
• 3-Phase PFC
• Motor Drives

Maximum Ratings (TC = 25˚C unless otherwise specified)

Symbol Parameter Value Unit Test Conditions Notes

VDS Drain - Source Voltage 1.2 kV

VGS Gate - Source Voltage +25/-10 V

87 VGS = 20 V, TC = 25 ˚C
ID Continuous Drain Current A Fig. 26
59 VGS = 20 V, TC = 90 ˚C

Pulse width tP = 250 μs

ID(pulse) Pulsed Drain Current 250 A Fig. 28
2,Rev. B

Rate limited by Tjmax,TC = 25˚C

TJ Junction Temperature 150 ˚C

S050M12CM

TC ,TSTG Case and Storage Temperature Range -40 to +125 ˚C

Visol Case Isolation Voltage 2.5 kV DC, t = 1 min

LStray Stray Inductance 30 nH Measured from pins 25-26 to 27-28

Datasheet: CC

M Mounting Torque 5.0 N-m

G Weight 180 g

PD Power Dissipation 312 W TC = 25 ˚C, TJ ≤ 150 ˚C Fig. 27

Subject to change without notice.

1
www.cree.com
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain - Source Breakdown Voltage 1.2 kV VGS, = 0 V, ID = 100 µA
2.3 VDS = 10 V, ID = 2.5 mA
VGS(th) Gate Threshold Voltage V
1.6 VDS = 10 V, ID = 2.5 mA, TJ = 150 ˚C
IDSS Zero Gate Voltage Drain Current 2 100 μA VDS = 1.2 kV, VGS = 0V
IGSS Gate-Source Leakage Current 0.5 μA VGS = 20 V, VDS = 0V
25 34 VGS = 20 V, IDS = 50 A Fig.
RDS(on) On State Resistance mΩ
43 63 VGS = 20 V, IDS = 50 A, TJ = 150 ˚C 4-7

22 VDS = 20 V, IDS = 50 A
gfs Transconductance S Fig. 8
21 VDS = 20 V, ID = 50 A, TJ = 150 ˚C
Ciss Input Capacitance 2.810
VDS = 800 V, VGS = 0 V Fig.
Coss Output Capacitance 0.393 nF f = 1 MHz, VAC = 25 mV 16,17
Crss Reverse Transfer Capacitance 0.014

Eon Turn-On Switching Energy 1.1 mJ VDD = 600 V, VGS = +20V/-5V

ID = 50 A, RG = 20 Ω
Load = 200 μH TJ = 150 ˚C Fig. 18
EOff Turn-Off Switching Energy 0.6 mJ
Note: IEC 60747-8-4 Definitions
RG (int) Internal Gate Resistance 1.5 Ω f = 1 MHz, VAC = 25 mV
QGS Gate-Source Charge 32
QGD Gate-Drain Charge 30 nC VDD= 800 V, ID= 50 A Fig. 15
QG Total Gate Charge 180
td(on) Turn-on delay time 21 ns
VDD = 800V, RLOAD = 8 Ω
tr(on) VSD fall time 90% to 10% 30 ns VGS = +20/-2V, RG = 3.8 Ω Fig.
TJ = 25 ˚C 20-25
td(off) Turn-off delay time 50 ns
Note: IEC 60747-8-4 Definitions
tf(off) VSD rise time 10% to 90% 19 ns

Free-Wheeling SiC Schottky Diode Characteristics

Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
1.5 1.7 IF = 50 A, VGS = 0
VSD Diode Forward Voltage V Fig. 9
2.0 2.3 IF = 50 A, TJ = 150 ˚C
QC Total Capacitive Charge 0.28 μC

IF Continuous Forward Current 50 A VGS = -5 V, Tc = 90 ˚C

Thermal Characteristics
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note

RthJCM Thermal Resistance Juction-to-Case for MOSFET 0.37 0.40 Tc = 90 ˚C, PD = 150 W
˚C/W
RthJCD Thermal Resistance Juction-to-Case for Diode 0.42 0.43 Tc = 90 ˚C, PD = 130 W

NTC Characteristics
Symbol Condition Typ. Max. Unit

R25 TC = 25 °C 5 kΩ
Delta R/R TC = 100 °C, R100 = 481 Ω ±5 %

P25 TC = 25 °C mW

B25/50 R2 = R25 exp[B25/50(1/T2-1/(298.15K))] 3380 K

B25/80 R2 = R25 exp[B25/80(1/T2-1/(298.15K))] 3440 K

2 CCS050M12CM2,Rev. B
Typical Performance

200 200
Conditions: VGS = 20 V Conditions: VGS = 20 V
VGS = 15 V
TJ = -40 °C TJ = 25 °C
tp < 50 µs VGS = 15 V tp < 50 µs
160 160
Drain Current, IDS (A)

Drain Current, IDS (A)

120 120

80 80 VGS = 10 V

VGS = 10 V
40 40

VGS = 5 V VGS = 5 V
0 0
0 3 6 9 12 15 0 3 6 9 12 15
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 1. Typical Output Characteristics TJ = -40 ˚C Figure 2. Typical Output Characteristics TJ = 25 ˚C

200 2.0
Conditions: Conditions:
TJ = 150 °C 1.8 IDS = 50 A
VGS = 20 V
tp < 50 µs VGS = 20 V
160 1.6 tp < 50 µs
VGS = 15 V
On Resistance, RDS On (p.u.)

1.4
Drain Current, IDS (A)

VGS = 10 V
120 1.2

1.0

80 0.8

0.6

40 0.4

VGS = 5 V 0.2

0 0.0
0 3 6 9 12 15 -50 -25 0 25 50 75 100 125 150
Drain-Source Voltage, VDS (V) Junction Temperature, TJ (°C)

Figure 3. Typical Output Characteristics TJ = 150 ˚C Figure 4. Normalized On-Resistance vs. Temperature

60 100
Conditions: Conditions:
VGS = 20 V 90 IDS = 50 A
50 tp < 50 µs tp < 50 µs
TJ = 150 °C 80
On Resistance, RDS On (mΩ)
On Resistance, RDS On (mΩ)

TJ = 125 °C 70
40 TJ = -40 °C
60

30 50
TJ = 25 °C TJ = 150 °C

40
TJ = -40 °C TJ = 25 °C
20
30

20
10
10

0 0
0 25 50 75 100 12 13 14 15 16 17 18 19 20
Drain Source Current, IDS (A) Gate Source Voltage, VGS (V)

Figure 5. Normalized On-Resistance vs. Drain Current Figure 6. Normalized On-Resistance vs. Gate-Source
For Various Temperatures Voltage for Various Temperatures

3 CCS050M12CM2,Rev. B
Typical Performance

100 100
Conditions: Conditions: TJ = 150 °C
90 IDS = 50 A tp < 50 µs
tp < 50 µs
80 80

Drain-Source Current, IDS (A)

VGS = 12 V
On Resistance, RDS On (mΩ)

70

60 60
TJ = 25 °C
50
VGS = 14 V
40 40
VGS = 16 V
30 VGS = 18 V

VGS = 20 V TJ = -40 °C
20 20

10

0 0
-50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 12
Junction Temperature, TJ (°C) Gate-Source Voltage, VGS (V)

Figure 7. On-Resistance vs. Temperature Figure 8. Transfer Characteristic for Various

for Various Gate-Source Voltages Junction Temperatures

-3 -2.5 -2 -1.5 -1 -0.5 0 -3 -2.5 -2 -1.5 -1 -0.5 0

0 0

VGS = -5 V

VGS = -2 V
VGS = 0 V
Drain-Source Currnmt, IDS (A)
Drain-Source Current, IDS (A)

-25 -25

-50 -50

-75 -75

Conditions: Conditions:
TJ = -40 °C VGS = -2 V
TJ = 25 °C
tp < 50 µs VGS = -5 V VGS = 0 V tp < 50 µs
-100 -100
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 9. Diode Characteristic at -40 ˚C Figure 10. Diode Characteristic at 25 ˚C

-3 -2.5 -2 -1.5 -1 -0.5 0 -3 -2.5 -2 -1.5 -1 -0.5 0

0 0
VGS = 0 V
VGS = 10 V
VGS = 5 V
Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

-25 -25
VGS = 20 V

VGS = 15 V

-50 -50

VGS = 0 V
VGS = -5 V
-75 -75

Conditions: Conditions:
TJ = 150 °C TJ = -40 °C
VGS = -2 V tp < 50 µs tp < 50 µs
-100 -100
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 11. Diode Characteristic at 150 ˚C Figure 12. 3rd Quadrant Characteristic at -40 ˚C

4 CCS050M12CM2,Rev. B
Typical Performance

-3 -2.5 -2 -1.5 -1 -0.5 0 -3 -2.5 -2 -1.5 -1 -0.5 0

0 0
VGS = 0 V
VGS = 0 V

VGS = 5 V
Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

-25 -25
VGS = 10 V VGS = 5 V

VGS = 10 V
VGS = 15 V
-50 -50

VGS = 20 V VGS = 15 V

-75 -75

Conditions: Conditions:
TJ = 25 °C TJ = 150 °C
tp < 50 µs VGS = 20 V tp < 50 µs
-100 -100
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 13. 3rd Quadrant Characteristic at 25 ˚C Figure 14. 3rd Quadrant Characteristic at 150 ˚C

20 10000
Conditions:
CISS
VDS = 800 V
IDS = 50 A
15 IGS = 10 mA
Gate-Source Voltage, VGS (V)

1000
COSS
Capacitance (pF)

10

100

5
CRSS

10
0
Conditions:
f = 1 MHz
VAC = 25 mV
-5 1
0 30 60 90 120 150 180 0 50 100 150 200 250
Gate Charge (nC)
Drain-Source Voltage, VDS (V)

Figure 16. Typical Capacitances vs. Drain-Source

Figure 15. Typical Gate Charge Characteristics
Voltage (0 - 250 V)

10000 3.0
Conditions:
CISS VDD = 600 V
TJ = 150 °C
2.5 L = 200 µH
RG = 20 Ohms Eon
1000 VGS = +20V/-5V
COSS
2.0
Capacitance (pF)

Switching Loss (mJ)

Eoff

100 1.5

CRSS
1.0

10
Conditions: 0.5
f = 1 MHz
VAC = 25 mV

1 0.0
0 250 500 750 1000 0 25 50 75 100 125

Drain-Source Voltage, VDS (V) Drain to Source Current, IDS (A)

Figure 17. Typical Capacitances vs. Drain-Source Figure 18. Inductive Switching Energy vs.
Voltage (0 - 1 kV) Drain Current For VDS = 600V, RG = 20 Ω

5 CCS050M12CM2,Rev. B
Typical Performance

4.5 100
Conditions:
ton
VDD = 800 V
4.0
TJ = 150 °C
L = 200 µH
Eon
3.5 RG = 20 Ohms
VGS = +20V/-5V

Time, ton, tr, td(on) (ns)

3.0 td(on)
Switching Loss (mJ)

Eoff
2.5 tr

2.0

1.5

Conditions:
1.0
VGS: +20/-5V
RG = 20 Ohms
0.5 VDD = 800 V
TJ = 25 °C
0.0 10
0 25 50 75 100 125 1 10 100

Drain to Source Current, IDS (A) Drain-Source Current, IDS (A)

Figure 19. Inductive Switching Energy vs.

Figure 20. Turn-on Timing vs. Drain Current
Drain Current For VDS = 800 V, RG = 20 Ω

10000 1000
Conditions:
VGS: +20/-5V
RLoad = 16 Ohms
VDD = 800 V tr
TJ = 25 °C
ton td(on)
Time, ton, tr, td(on) (ns)
Time, toff, tf, td(off (ns)

1000 100

td(off) toff

100 10
tf
Conditions:
VGS: +20/-5V
RG = 20 Ohms
VDD = 800 V
TJ = 25 °C
10 1
1 10 100 10 100
Drain-Source Current, IDS (A) Gate Resistance, RG (Ohms)

Figure 21. Turn-off Timing vs. Drain Current Figure 22. Turn-on Timing vs. External Gate Resistor

10000 100
Conditions:
ton
VGS: +20/-5V
RLoad = 16 Ohms
VDD = 800 V toff
1000 TJ = 25 °C
Time, ton, tr, td(on) (ns)
Time, toff, tf, td(off (ns)

tr

td(off) td(on)
tr
100

10 Conditions:
VGS: +20/-5V
RG = 20 Ohms
VDD = 800 V
RLoad = 16 Ohms
1 10
10 100 0 20 40 60 80 100 120 140 160
Gate Resistance, RG (Ohms) Junction Temperature, TJ (°C)

Figure 23. Turn-off Timing vs. External Gate Resistor Figure 24. Turn-on Timing vs. Junction Temperature

6 CCS050M12CM2,Rev. B
Typical Performance

1000 100
Conditions:
90 TJ ≤ 150 °C

Drain-Source Continous Current, IDS (DC) (A)

80

toff 70
Time, toff, tf, td(off (ns)

td(off) 60

100 50
tf
40

30
Conditions:
VGS: +20/-5V 20
RG = 20 Ohms
VDD = 800 V 10
RLoad = 16 Ohms
10 0
0 20 40 60 80 100 120 140 160 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature, TJ (°C) Case Temperature, TC (°C)

Figure 26. Continous Drain Current Derating vs Case

Figure 25. Turn-on Timing vs. Junction Temperature
Temperature

350
Conditions:
TJ ≤ 150 °C 1 µs
300 100.00
Maximum Dissipated Power, Ptot (W)

10 µs
Limited by RDS On
Drain-Source Current, IDS (A)

100 µs
250
1 ms

200 10.00
100 ms

150

100 1.00

Conditions:
50 TC = 25 °C
D = 0,
Parameter: tp
0 0.10
-40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 100 1000
Case Temperature, TC (°C) Drain-Source Voltage, VDS (V)

Figure 27. Maximum Power Dissipation (MOSFET) Derat-

Figure 28. MOSFET Safe Operating Area
ing vs Case Temperature

1 1
Diode Junction-Case Thermal Response, Zth JC
MOSFET Junction-Case Thermal Response, Zth JC

D = 90%
D = 90%
D = 70%
D = 70%
D = 50%
D = 50%
D = 30%
D = 30%
0.1 0.1
(°C/W)

D = 10%
D = 10%
(°C/W)

D = 5% D = 5%

D = 2% D = 2%
0.01 0.01
D = 1% D = 1%

D = 0.5% D = 0.5%

D = 0.2% tp D = tp / T D = 0.2% tp D = tp / T

Single Pulse
Single Pulse T T
0.001 0.001
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 10 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 10
Time (s) Time (s)

Figure 29. MOSFET Junction to Case Thermal Impedance Figure 30. Diode Junction to Case Thermal Impedance

7 CCS050M12CM2,Rev. B
Typical Performance

100000

10000
NTC Resistance (Ohms)

1000

100

10
-50 -25 0 25 50 75 100 125 150
NTC Temperature (°C)

Figure 31. NTC Resistance vs NTC tTemperature Figure 31. Resistive Switching Time Description

Module Application Note: The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based
modules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate
driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for
device oscillation. Also, great care is required to insure minimum inductance between the module and link capacitors to avoid
excessive VDS overshoots.

Please Refer to application note: Design Considerations when using Cree SiC Modules Part 1 and Part 2.
[CPWR-AN12, CPWR-AN13]

8 CCS050M12CM2,Rev. B
Package Dimensions (mm)

This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited Cree, Inc.
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical 4600 Silicon Drive
equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Durham, NC 27703
USA Tel: +1.919.313.5300
Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Fax: +1.919.313.5451
Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc. www.cree.com/power

9 CCS050M12CM2,Rev. B