CoolSiCTM MOSFET new product additions in

1200 V M1H technology

Peter Friedrichs, Vice President Silicon Carbide
13 April 2022
Agenda

1 Background of the M1H technology

2 New Portfolio & Roadmap

3 Summary

[Owner: Infineon Doc ID: Vers.: ]

2022-04-13 Copyright © Infineon Technologies AG 2022. All rights reserved. 2
Agenda

1 Background of the M1H technology

2 New portfolio & Roadmap

3 Summary

[Owner: Infineon Doc ID: Vers.: ]

2022-04-13 Copyright © Infineon Technologies AG 2022. All rights reserved. 3
What is behind Infineon´s new M1H portfolio

New package features implemented for discrete

devices with enhanced thermal performance

The new technology derivate come with extended

operating conditions without compromising the
CoolSiCTM excellent reliability

MOSFET With the roll out of M1H the portfolio sees an

significant extension for both, discrete and modules
1200 V
M1H Extended spectrum of reference boards rolled out
with PCIM in May to demonstrate the implementation
in real systems- stay tuned !

[Owner: Infineon Doc ID: Vers.: ]

The basic device concept is unchanged, the cell
layout and the cell dimensions are not touched ➔ no
new generation

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The latest CoolSiC™ base technology advancements give you full
freedom in choosing the gate voltage

Previous gate voltage recommendation area New gate voltage recommendation area

0 0
-1 Discrete recommended VGS(off) operation area
Maximum transient VGS [V]

-1
-2
-2

Maximum transient VGS [V]

-3
-4 -3
-5 -4
-6
-7
-5 Full operation Full Area
-8 -6
-9 -7
-10 -8
-11
-9
1 10 100 1000
Switching frequency* [kHz] -10
0 -11
Maximum transient VGS [V]

-1 Module recommended VGS(off) operation area 1 10 100 1000

-2 Switching frequency* [kHz]
-3
-4
-5
-6 Ease of use with maximum negative gate-source voltage
-7
-8 down to -10 V
-9
-10
-11
1 10 100 1000
Switching frequency* [kHz]
*Assuming 10 years of continuous operation. For more details see Application Note AN2018-09

2022-03-09 restricted Copyright © Infineon Technologies AG 2022. All rights reserved. Infineon Proprietary 5
Gate-source voltage – more detailed scope covered by datsheet

-7/20

Parameter
On-state gate voltage 15 ... 18
Off-state gate voltage 0 ... -5

[Owner: Infineon Doc ID: Vers.: ]

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CoolSiCTM MOSFET 1200 V M1H series – Static performance
improvement

RDS on improvement
~12% better at same chip size and application relevant
temperatures

Example for similar chip size:

CoolSiCTM -12 %

MOSFET 70

RDS on [mΩ]
1200 V 60

50
25°C
M1H 40 125°C
30

[Owner: Infineon Doc ID: Vers.: ]

20

10

0
M1 @ 15V, 25A M1H @ 18V, 25A

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Agenda

1 Background of the M1H technology

2 Portfolio & Roadmap

3 Summary

[Owner: Infineon Doc ID: Vers.: ]

2022-04-13 Copyright © Infineon Technologies AG 2022. All rights reserved. 8
CoolSiCTM MOSFET 1200 V M1H series for Easy modules

NEW

CoolSiCTM Easy 3B

MOSFET
1200 V Text

M1H

[Owner: Infineon Doc ID: Vers.: ]

Easy 1B Easy 2B

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CoolSiCTM MOSFET 1200 V M1H series for Easy modules

Roll-out of new chip sizes

maximum flexibility which guarantees broadest industrial portfolio

~ 55 mΩ @ 18V, 25°C ~ 33 mΩ @ 18V, 25°C ~ 13 mΩ @18V, 25°C

CoolSiCTM
MOSFET Maximum junction temperature Tvj,op of 175 °C
overload capability to cover failure events and for higher power
1200 V density

› Operation at a temperature of Tvjop=175°C under overload condition:

M1H

[Owner: Infineon Doc ID: Vers.: ]

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M1 vs. M1H – small adoption of internal RG for modules, switching
behavior slightly optimized
45 m Ω / 1200V M1 33 m Ω / 1200V M1H
› ID: 25 A › VGS: +15V/-5V › ID: 25 A › VGS: +15V/-5V
› Tvj: 25°C › Rg,int : 4 Ω vs. › Tvj: 25°C › Rg,int : 8 Ω
› Vdc: 600 V › Vdc: 600 V

M1 vs. M1H – switching behavior

Turn-on Turn-off
› Typical di/dt

[Owner: Infineon Doc ID: Vers.: ]

RGon RGoff

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New Easy module CoolSiCTM MOSFET M1H portfolio
RDS,on [m] 1200 V half-bridge 1200 V H-Bridge 1200 V SixPACK / PIM 1200 V Booster 1200 V 3-level
FF55MR12W1M1H(P)_B11 FS55MR12W1M1H(P)_B11
55
FF55MR12W1M1H_B70 FS55MR12W1M1H_B70
FF33MR12W1M1H(P)_B11 F4-33MR12W1M1H(P)_B76 FS33MR12W1M1H(P)_B11
33
FF33MR12W1M1H_B70 F4-33MR12W1M1H_B70 FS33MR12W1M1H_B70
FS28MR12W1M1H(P)_B11
28
FS28MR12W1M1H_B70

FF17MR12W1M1H(P)_B11
F4-17MR12W1M1H(P)_B76 DF17MR12W1M1HF_B67
17 FF17MR12W1M1H(P)_B17 FP17MR12W2M1H_B11
F4-17MR12W1M1H_B70 DF17MR12W1M1HF_B68
FF17MR12W1M1H(P)_B70

FS13MR12W2M1H(P)_B11
13/14 DF14MR12W1M1HF_B67
FS13MR12W2M1H_B70
F4-11MR12W2M1H(P)_B76 F3L11MR12W2M1(P)_B74
11 FF11MR12W2M1HP_B11 DF11MR12W1M1HF_B67
F4-11MR12W2M1H_B70 F3L11MR12W2M1H(P)_B19

FF8MR12W1M1H(P)_B11 F4-8MR12W2M1H(P)_B76
8 DF8MR12W1M1HF_B67 F3L8MR12W2M1H(P)_B11
FF8MR12W1M1H(P)_B70 F4-8MR12W2M1H_B70

FF6MR12W2M1H(P)_B11 F4-6MR12W2M1H(P)_B11
6
FF6MR12W2M1H(P)_B70 F4-6MR12W2M1H_B70
FF4MR12W2M1H(P)_B11
4
FF4MR12W2M1H(P)_B70
2 FF2MR12W3M1H_B11
Orderable, registerable and available now B17 = common source B11 = PressFIT Pin
B19 = full SiC B74 = ANPC
In development B76 = open source B70 = AlN ceramic Drain-source on resistance
Product Idea P = TIM B67 = Booster 55 m𝝮 2 m𝝮
B68 = Booster one string

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CoolSiCTM MOSFET 1200 V M1H series for discrete packages

NEW
Low-Ohmic TO247-4
additions with .XT
technology in TO-
footprint
Text

[Owner: Infineon Doc ID: Vers.: ]

TO247-3 D²PAK 7L

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CoolSiC™ discrete portfolio
1200 V and 1700 V MOSFETs lineup
RDS(on) TO-247-3 TO-247-4 D2PAK-7L D2PAK-7L
[mΩ] *Optimized SMD SMD *high
Pin-out creepage

7 IMW120R007M1H IMZA120R007M1H*

14 IMW120R014M1H IMZA120R014M1H*

20 IMW120R020M1H IMZA120R020M1H*

30 IMW120R030M1H IMZ120R030M1H IMBG120R030M1H

1200 V

40/45 IMW120R040M1H IMZA120R040M1H* IMBG120R045M1H

60 IMW120R060M1H IMZ120R060M1H IMBG120R060M1H

90 IMW120R90M1H IMZ120R090M1H IMBG120R090M1H

140 IMW120R140M1H IMZ120R140M1H IMBG120R140M1H

220 IMW120R220M1H IMZ120R220M1H IMBG120R220M1H

[Owner: Infineon Doc ID: Vers.: ]

350 IMW120R350M1H IMZ120R350M1H IMBG120R350M1H

450 IMBF170R450M1
1700 V

650 IMBF170R650M1

1000 IMBF170R1K0M1

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1200 V CoolSiC™ MOSFET
Higher single device power with the new low-ohmic range

AC-DC stage DC-DC stage: DC-DC stage:

with with with
B6 bridge LLC, CLLC DAB

Uni-directional or bi-directional

RDS(on) Typical device power

[mΩ] [kW]
7
~30
14
15~22

[Owner: Infineon Doc ID: Vers.: ]

20
30
11~15
40

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New low-ohmic range 7, 14, 20 and 40 mΩ
New features Portfolio

Lowest RDS(on) in TO247 for highest power RDS(on) TO-247-3 TO-247-4

1 [mΩ]
density
Easy to design with maximum gate-source
2
voltage lowered to -10 V
Flexible turn-off gate voltage selection 7
3 IMW120R007M1H IMZA120R007M1H
-5V~0V
14 IMW120R014M1H IMZA120R014M1H
.XT interconnection technology improves on
4 20 IMW120R020M1H IMZA120R020M1H
thermal dissipation capability up to 30%
40 IMW120R040M1H IMZA120R040M1H
Enhanced robustness features with avalanche
5
and short-circuit protection

[Owner: Infineon Doc ID: Vers.: ]

Applications

and more!

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1200 V CoolSiC™ MOSFET
Solar Application – PV Boost
Paralleling
Power board Single part
parts
More power, less weight System size

Thermal interface material

CoolSiC Example:
Part number Power density
MOSFET PV boost power

IMZA120R030M1H 30 mΩ ~15 kW

IMZA120R020M1H 20 mΩ ~20 kW

IMZA120R014M1H 14 mΩ ~25 kW

[Owner: Infineon Doc ID: Vers.: ]

IMZA120R007M1H 7 mΩ ~30 kW

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1200 V CoolSiC™ MOSFET
Significant improvement of thermal capabilities by .XT interconnection

Standard interconnection .XT interconnection .XT technology benefits

Standard soldering Diffusionsoldering
Diffusion soldering
with J-alloy with Au based
metallization
CoolSiC TM chip
CoolSiCTM chip
› Enhances the thermal dissipation capabilities with
Package leadframe (Cu) Package leadframe (Cu)
>15% improvement on thermal conductivity.

› >25% reduction on junction-to-case thermal

resistance (Rthjc)

› >45% reduction on junction-to-case thermal

impedance (Zthjc)

[Owner: Infineon Doc ID: Vers.: ]

› Reduce thermo-mechanical stress; increase
Standard Elimination of solder
soldering joint through power cycling capabilities.
diffusion soldering

2022-04-13 Copyright © Infineon Technologies AG 2022. All rights reserved. 18

1200 V CoolSiC™ MOSFET
.XT enhances optimization potential even further for SiC based designs

Thermal dissipation Examples of application

capability optimizations
Up to 30%
higher thermal Extra power in
188 W dissipation Increase output
current given system
capability with size
.XT
145 W interconnection OR

Increase fSW Reduce the

(2L 3ph full bridge) passives

OR

[Owner: Infineon Doc ID: Vers.: ]

Lower Increase
Standard .XT
junction lifetime
temperature expectancy
Conditions:
Tcase = 100°C;
CoolSiCTM MOSFET: 20 mOhm, IMZA120R020M1H

2022-04-13 Copyright © Infineon Technologies AG 2022. All rights reserved. 19

Agenda

1 Background of the M1H technology

2 Portfolio & Roadmap

3 Summary

[Owner: Infineon Doc ID: Vers.: ]

2022-04-13 Copyright © Infineon Technologies AG 2022. All rights reserved. 20
› Introduction of a new 1200 V SiC MOSFET chip
upgrade called M1H with added features and wide
range of control possibilities

› Extended chip & package portfolio for highest

flexibility and power density

[Owner: Infineon Doc ID: Vers.: ]

› Product introduction of Easy 3B using 1200 V
CoolSiCTM MOSFET and .XT in low-ohmic TO247
portfolio

Infineon has the right solution for every fast switching application!
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