PD - 94913

IRGIB10B60KD1P
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE C
VCES = 600V
Features
Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF. IC = 10A, TC=100C
10s Short Circuit Capability.
Square RBSOA. G
tsc > 10s, TJ=150C
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient. E
Maximum Junction Temperature Rated at 175C
n-channel VCE(on) typ. = 1.7V
Lead-Free
Benefits
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation.

TO-220
Absolute Maximum Ratings Full-Pak
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25C Continuous Collector Current 16
IC @ TC = 100C Continuous Collector Current 10 A
ICM Pulse Collector Current (Ref.Fig.C.T.5) 32
ILM Clamped Inductive Load current c 32
IF @ TC = 25C Diode Continuous Forward Current 16
IF @ TC = 100C Diode Continuous Forward Current 10
IFM Diode Maximum Forward Current 32
VISOL RMS Isolation Voltage, Terminal to Case, t = 1 min 2500 V
VGE Gate-to-Emitter Voltage 20
PD @ TC = 25C Maximum Power Dissipation 44 W
PD @ TC = 100C Maximum Power Dissipation 22
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range C
Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf.in (1.1N.m)
Thermal / Mechanical Characteristics
Parameter Min. Typ. Max. Units
RJC Junction-to-Case- IGBT 3.4
RJC Junction-to-Case- Diode 5.3 C/W
RCS Case-to-Sink, flat, greased surface 0.50
RJA Junction-to-Ambient, typical socket mount 62
Wt Weight 2.0 g
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IRGIB10B60KD1P
Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 500A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.99 V/C VGE = 0V, IC = 1mA (25C-150C)
1.50 1.70 2.10 IC = 10A, VGE = 15V, TJ = 25C
VCE(on) Collector-to-Emitter Voltage 2.05 2.35 V IC = 10A, VGE = 15V, TJ = 150C
2.06 2.35 IC = 10A, VGE = 15V, TJ = 175C
VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250A
VGE(th)/TJ Threshold Voltage temp. coefficient -10 mV/C VCE = VGE, IC = 1mA (25C-150C)
gfe Forward Transconductance 5.0 S VCE = 50V, IC = 10A, PW = 80s
1.0 150 VGE = 0V, VCE = 600V
ICES Zero Gate Voltage Collector Current 90 250 A VGE = 0V, VCE = 600V, TJ = 150C
150 400 VGE = 0V, VCE = 600V, TJ = 175C
VFM Diode Forward Voltage Drop 1.80 2.40 V IF = 5.0A, VGE = 0V
1.32 1.74 IF = 5.0A, VGE = 0V, TJ = 150C
1.23 1.62 IF = 5.0A, VGE = 0V, TJ = 175C
IGES Gate-to-Emitter Leakage Current 100 nA VGE = 20V, VCE = 0V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) 41 62 IC = 10A
Qge Gate-to-Emitter Charge (turn-on) 4.6 6.9 nC VCC = 400V
Qgc Gate-to-Collector Charge (turn-on) 19 29 VGE = 15V
Eon Turn-On Switching Loss 156 264 IC = 10A, VCC = 400V
Eoff Turn-Off Switching Loss 165 273 J VGE = 15V, RG = 50, L = 1.07mH
Etot Total Switching Loss 321 434 Ls= 150nH, TJ = 25C d
td(on) Turn-On delay time 25 33 IC = 10A, VCC = 400V
tr Rise time 24 34 ns VGE = 15V, RG = 50, L = 1.1mH
td(off) Turn-Off delay time 180 250 Ls= 150nH, TJ = 25C
tf Fall time 62 87
Eon Turn-On Switching Loss 261 372 IC = 10A, VCC = 400V
Eoff Turn-Off Switching Loss 313 425 J VGE = 15V, RG = 50, L = 1.07mH
Etot Total Switching Loss 574 694 Ls= 150nH, TJ = 150C d
td(on) Turn-On delay time 22 31 IC = 8.0A, VCC = 400V
tr Rise time 24 34 ns VGE = 15V, RG = 50, L = 1.07mH
td(off) Turn-Off delay time 240 340 Ls= 150nH, TJ = 150C
tf Fall time 48 67
LE Internal Emitter Inductance 7.5 nH Measured 5 mm from package
Cies Input Capacitance 610 915 VGE = 0V
Coes Output Capacitance 66 99 pF VCC = 30V
Cres Reverse Transfer Capacitance 23 35 f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area FULL SQUARE TJ = 150C, IC = 32A, Vp = 600V
VCC=500V,VGE = +15V to 0V,RG = 50
SCSOA Short Circuit Safe Operating Area 10 s TJ = 150C, Vp = 600V, RG = 50
VCC=360V,VGE = +15V to 0V
ISC (PEAK) Peak Short Circuit Collector Current 100 A
Erec Reverse Recovery Energy of the Diode 99 128 J TJ = 150C
trr Diode Reverse Recovery Time 79 103 ns VCC = 400V, IF = 10A, L = 1.07mH
Irr Peak Reverse Recovery Current 14 18 A VGE = 15V, RG = 50
Qrr Diode Reverse Recovery Charge 553 719 nC di/dt = 500A/s
Vcc =80% (VCES), VGE = 15V, L =100H, RG = 50. Energy losses include "tail" and diode reverse recovery.
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 IRGIB10B60KD1P

20 50
45
16 40
35
12 30

Ptot (W)
IC (A)

25
8 20
15
4 10
5
0 0
0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180
T C (C) T C (C)

Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature

100 100

10 10 s

100 s
IC (A)

IC A)

1 10

1ms

0.1
DC

0.01
1
1 10 100 1000 10000
10 100 1000
VCE (V)
VCE (V)

Fig. 3 - Forward SOA Fig. 4 - Reverse Bias SOA

TC = 25C; TJ 175C TJ = 150C; VGE =15V
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IRGIB10B60KD1P
20 20
VGE = 18V VGE = 18V
18 18
VGE = 15V VGE = 15V
16 VGE = 12V 16 VGE = 12V
VGE = 10V VGE = 10V
14 14
VGE = 8.0V VGE = 8.0V
12 12
ICE (A)

ICE (A)
10 10
8 8
6 6
4 4
2 2
0 0
0 2 4 6 0 2 4 6
VCE (V) VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40C; tp = 80s TJ = 25C; tp = 80s

20 40
18 VGE = 18V -40C
35
25C
16 VGE = 15V
150C
VGE = 12V 30
14 VGE = 10V
VGE = 8.0V 25
12
ICE (A)

IF (A)

10 20
8 15
6
10
4
2 5

0 0
0 2 4 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VCE (V) VF (V)

Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics
TJ = 150C; tp = 80s tp = 80s
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 IRGIB10B60KD1P
20 20
18 18
16 16
14 14
12 ICE = 5.0A 12 ICE = 5.0A
VCE (V)

VCE (V)
10 ICE = 10A 10 ICE = 10A
ICE = 20A ICE = 20A
8 8
6 6
4 4
2 2
0 0
5 10 15 20 5 10 15 20
VGE (V) VGE (V)

Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE
TJ = -40C TJ = 25C

20 100
18 90 TJ = 25C
16 80 TJ = 150C
14 70
12 ICE = 5.0A 60
VCE (V)

ICE (A)

10 ICE = 10A 50
ICE = 20A
8 40
6 30
4 20 T J = 150C

2 10 T J = 25C
0 0
5 10 15 20 0 5 10 15 20
VGE (V) VGE (V)

Fig. 11 - Typical VCE vs. VGE Fig. 12 - Typ. Transfer Characteristics

TJ = 150C VCE = 50V; tp = 10s
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 IRGIB10B60KD1P
700 1000

600 tdOFF

500 EOFF

Swiching Time (ns)

100
Energy (J)

400
EON tF

300 tdON

tR
200 10

100

0
0 5 10 15 20 1
0 5 10 15 20
IC (A)
IC (A)

Fig. 13 - Typ. Energy Loss vs. IC Fig. 14 - Typ. Switching Time vs. IC
TJ = 150C; L=1.07mH; VCE= 400V TJ = 150C; L=1.07mH; VCE= 400V
RG= 50; VGE= 15V RG= 50; VGE= 15V

1000 10000

EOFF
800

EON
Swiching Time (ns)

1000
tdOFF
Energy (J)

600

400
100

tF
200
tR
tdON
0 10
0 100 200 300 400 500 0 100 200 300 400 500

RG () RG ()

Fig. 15 - Typ. Energy Loss vs. RG Fig. 16 - Typ. Switching Time vs. RG
TJ = 150C; L=1.07mH; VCE= 400V TJ = 150C; L=1.07mH; VCE= 400V
ICE= 10A; VGE= 15V ICE= 10A; VGE= 15V
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 IRGIB10B60KD1P
15 16

RG = 50 14

12
10 RG = 150
10
IRR (A)

IRR (A)
RG = 270 8

6
5
RG = 470
4

0 0
0 5 10 15 20 0 100 200 300 400 500
IF (A) RG ()

Fig. 17 - Typical Diode IRR vs. IF Fig. 18 - Typical Diode IRR vs. RG
TJ = 150C TJ = 150C; IF = 10A

16 1000
50
14 150
20A
800
12 270
10A
470
10 600
Q RR (nC)
IRR (A)

8
400
6 5.0A

4 200

2
0
0
0 100 200 300 400 500 600
0 200 400 600
diF /dt (A/s)
diF /dt (A/s)

Fig. 19- Typical Diode IRR vs. diF/dt Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; VCC= 400V; VGE= 15V;TJ = 150C
ICE= 10A; TJ = 150C
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IRGIB10B60KD1P
200

160
Energy (J)

120

470
270
80
150
50

40
0 5 10 15 20 25

IF (A)

Fig. 21 - Typical Diode ERR vs. IF

TJ = 150C

1000 16

14
Cies
300V
12 400V
Capacitance (pF)

10
VGE (V)

100
8

6
Coes
4

Cres 2

0
10
0 10 20 30 40 50
1 10 100
Q G , Total Gate Charge (nC)
VCE (V)

Fig. 22- Typ. Capacitance vs. VCE Fig. 23 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 10A; L = 2500H
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D = 0.50
Thermal Response ( Z thJC )

1 0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (C/W) i (sec)
J C 0.3628 0.00018
0.1 J
0.02
0.2582 0.000695
1 2 3 4
0.01 1 2 3 4 1.1008 0.075305
Ci= i/Ri 1.6973 1.781
Ci i/Ri
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

t1 , Rectangular Pulse Duration (sec)

Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

D = 0.50
Thermal Response ( Z thJC )

1 0.20

0.10 R1
R1
R2
R2
R3
R3
R4
R4
Ri (C/W) i (sec)
J C 0.9004 0.000103
0.05 J
1 1.3642 0.000693
2 3 4
1 2 3 4
0.02 1.4540 0.033978
0.1
0.01 Ci= i/Ri 1.5805 1.6699
Ci i/Ri

Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

t1 , Rectangular Pulse Duration (sec)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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IRGIB10B60KD1P
L

L
VCC 80 V +
DUT DUT
0 - 480V
Rg
1K

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

diode clamp /
DUT
Driver L

- 5V
DC 360V DUT /
DRIVER VCC
DUT Rg

Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit

VCC
R=
ICM

DUT VCC
Rg

Fig.C.T.5 - Resistive Load Circuit

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 IRGIB10B60KD1P
600 15 600 30
tf
500 12.5
Vce 500 25
tr Vce
400 10 Ice
400 20
90% Ice 90% Ice
300 7.5
10% Ice
5% Vce 300 15

(A)
Vce (V)

Vce (V)

Ice (A)
Ice(A)
200 5

Ice
5% Ice 200 10
100 2.5
Ice
100 5
0 0 5% Vce

Eoff Loss 0 0
-100 -2.5
Eon
Loss
-200 -5 -100 -5
0.4 0.6 0.8 1 1.2 0.05 0.15 0.25 0.35
Time (uS) Time (uS)

Fig. WF1- Typ. Turn-off Loss Waveform Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150C using Fig. CT.4 @ TJ = 150C using Fig. CT.4

100 15 400 200

QRR

0 10

tRR 300 150

-100 5

-200 0
Vce (V)

Ice (A)
Vf (V)

If (A)

200 100

-300 -5
Peak 10% Peak
IRR IRR
-400 -10 100 50

-500 -15

0 0
-600 -20
0.00 10.00 20.00 30.00 40.00 50.00
0.20 0.30 0.40 0.50 0.60
Time (uS)
Time (uS)

Fig. WF3- Typ. Diode Recovery Waveform Fig. WF4- Typ. S.C Waveform
@ TJ = 150C using Fig. CT.4 @ TC = 150C using Fig. CT.3
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IRGIB10B60KD1P

TO-220 Full-Pak Package Outline

Dimensions are shown in millimeters (inches)

TO-220 Full-Pak Part Marking Information

E X AM P L E : T H IS IS AN IR F I8 4 0 G
W IT H AS S E M B L Y
P AR T N U M B E R
L O T CO D E 3 4 3 2 IN T E R N AT IO N AL
AS S E M B L E D O N W W 2 4 1 9 9 9 R E C T IF IE R IR F I8 4 0 G
IN T H E AS S E M B L Y L IN E "K " L OGO 924K
34 32
D AT E C O D E
Note: "P" in assembly line
position indicates "Lead-Free" AS S E M B L Y Y E AR 9 = 1 9 9 9
L OT CODE W E E K 24
L IN E K

TO-220 Full-Pak package is not recommended for Surface Mount Application

Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/03
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/