PD - 94623B

SMPS IGBT IRGP35B60PD

WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
C VCES = 600V
Applications VCE(on) typ. = 1.85V
• Telecom and Server SMPS @ VGE = 15V IC = 22A
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies Equivalent MOSFET
• Consumer Electronics Power Supplies G
Parameters
RCE(on) typ. = 84mΩ
Features E
• NPT Technology, Positive Temperature Coefficient
ID (FET equivalent) = 35A
n-channel
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability
E
C
Benefits G
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses TO-247AC
• Higher Switching Frequency up to 150kHz

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 60
IC @ TC = 100°C Continuous Collector Current 34
ICM Pulse Collector Current (Ref. Fig. C.T.4) 120
ILM Clamped Inductive Load Current d 120 A
IF @ TC = 25°C Diode Continous Forward Current 40
IF @ TC = 100°C Diode Continous Forward Current 15
IFRM Maximum Repetitive Forward Current e 60
VGE Gate-to-Emitter Voltage ±20 V
PD @ TC = 25°C Maximum Power Dissipation 308 W
PD @ TC = 100°C Maximum Power Dissipation 123
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.41 °C/W
RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 1.7
RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
Weight ––– 6.0 (0.21) ––– g (oz)

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IRGP35B60PD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.78 — V/°C VGE = 0V, IC = 1mA (25°C-125°C)
RG Internal Gate Resistance — 1.7 — Ω 1MHz, Open Collector
— 1.85 2.15 IC = 22A, VGE = 15V 4, 5,6,8,9
VCE(on) Collector-to-Emitter Saturation Voltage — 2.25 2.55 V IC = 35A, VGE = 15V
— 2.37 2.80 IC = 22A, VGE = 15V, TJ = 125°C
— 3.00 3.45 IC = 35A, VGE = 15V, TJ = 125°C
VGE(th) Gate Threshold Voltage 3.0 4.0 5.0 V IC = 250µA 7,8,9
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -10 — mV/°C VCE = VGE, IC = 1.0mA
gfe Forward Transconductance — 36 — S VCE = 50V, IC = 22A, PW = 80µs
ICES Collector-to-Emitter Leakage Current — 3.0 375 µA VGE = 0V, VCE = 600V
— 0.35 — mA VGE = 0V, VCE = 600V, TJ = 125°C
VFM Diode Forward Voltage Drop — 1.30 1.70 V IF = 15A, VGE = 0V 10

— 1.20 1.60 IF = 15A, VGE = 0V, TJ = 125°C

IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V, VCE = 0V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref.Fig
Qg Total Gate Charge (turn-on) — 160 240 IC = 22A 17
Qgc Gate-to-Collector Charge (turn-on) — 55 83 nC VCC = 400V CT1

Qge Gate-to-Emitter Charge (turn-on) — 21 32 VGE = 15V

Eon Turn-On Switching Loss — 220 270 IC = 22A, VCC = 390V CT3
Eoff Turn-Off Switching Loss — 215 265 µJ VGE = +15V, RG = 3.3Ω, L = 200µH
Etotal Total Switching Loss — 435 535 TJ = 25°C f
td(on) Turn-On delay time — 26 34 IC = 22A, VCC = 390V CT3
tr Rise time — 6.0 8.0 ns VGE = +15V, RG = 3.3Ω, L = 200µH
td(off) Turn-Off delay time — 110 122 TJ = 25°C f
tf Fall time — 8.0 10
Eon Turn-On Switching Loss — 410 465 IC = 22A, VCC = 390V CT3
Eoff Turn-Off Switching Loss — 330 405 µJ VGE = +15V, RG = 3.3Ω, L = 200µH 11,13
Etotal Total Switching Loss — 740 870 TJ = 125°C f WF1,WF2
td(on) Turn-On delay time — 26 34 IC = 22A, VCC = 390V CT3
tr Rise time — 8.0 11 ns VGE = +15V, RG = 3.3Ω, L = 200µH 12,14
td(off) Turn-Off delay time — 130 150 TJ = 125°C f WF1,WF2
tf Fall time — 12 16
Cies Input Capacitance — 3715 — VGE = 0V 16
Coes Output Capacitance — 265 — VCC = 30V
Cres Reverse Transfer Capacitance — 47 — pF f = 1Mhz
Coes eff. Effective Output Capacitance (Time Related) g — 135 — VGE = 0V, VCE = 0V to 480V 15
Coes eff. (ER) Effective Output Capacitance (Energy Related) g — 179 —
TJ = 150°C, IC = 120A 3

RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2

Rg = 22Ω, VGE = +15V to 0V

trr Diode Reverse Recovery Time — 42 60 ns TJ = 25°C IF = 15A, VR = 200V, 19

— 74 120 TJ = 125°C di/dt = 200A/µs

Qrr Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C IF = 15A, VR = 200V, 21

— 220 600 TJ = 125°C di/dt = 200A/µs

Irr Peak Reverse Recovery Current — 4.0 6.0 A TJ = 25°C IF = 15A, VR = 200V, 19,20,21,22

— 6.5 10 TJ = 125°C di/dt = 200A/µs CT5

Notes:
 RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 1.85V and IC =22A. ID (FET Equivalent) is the equivalent MOSFET ID
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
‚ VCC = 80% (VCES), VGE = 20V, L = 100 µH, RG = 3.3Ω.
ƒ Pulse width limited by max. junction temperature.
„ Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
… Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.

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 IRGP35B60PD
70 350

60 300

50 250

200

Ptot (W)
40
IC (A)

30 150

20 100

10 50

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
T C (°C) T C (°C)

Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature
1000 70
VGE = 15V
60 VGE = 12V
VGE = 10V
50 VGE = 8.0V
100 VGE = 6.0V

40
ICE (A)
IC A)

30
10
20

10

1 0
10 100 1000 0 1 2 3 4 5
VCE (V) VCE (V)

Fig. 3 - Reverse Bias SOA Fig. 4 - Typ. IGBT Output Characteristics

TJ = 150°C; VGE =15V TJ = -40°C; tp = 80µs
70 70
VGE = 15V VGE = 15V
60 60
VGE = 12V VGE = 12V
VGE = 10V VGE = 10V
50 VGE = 8.0V 50 VGE = 8.0V
VGE = 6.0V VGE = 6.0V
40 40
ICE (A)

ICE (A)

30 30

20 20

10 10

0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE (V) VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs TJ = 125°C; tp = 80µs
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IRGP35B60PD
800 10

700 T J = 25°C 9
T J = 125°C
600 8

7
500
ICE = 11A

VCE (V)
ICE (A)

6
400 ICE = 22A
5 ICE = 35A
300
4
200
TJ = 125°C 3
100 T J = 25°C 2

0 1
0 5 10 15 20 0 5 10 15 20
VGE (V) VGE (V)

Fig. 7 - Typ. Transfer Characteristics Fig. 8 - Typical VCE vs. VGE

VCE = 50V; tp = 10µs TJ = 25°C

10 100

8 urrent -I (A)
F

7
ICE = 11A
ardC
VCE (V)

6
ICE = 22A
orw

10

5 ICE = 35A
InstantaneousF

TJ = 150°C
4 TJ = 125°C

TJ = 25°C
3

1 1
0.8 1.2 1.6 2.0 2.4
0 5 10 15 20 Forward Voltage Drop - V FM (V)

VGE (V)

Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typ. Diode Forward Characteristics
TJ = 125°C tp = 80µs

800 1000

700

600 td OFF
EON
Swiching Time (ns)

100
500
Energy (µJ)

400 tdON
EOFF
300 tF
10
200
tR
100

0 1
0 5 10 15 20 25 30 35 40 0 10 20 30 40

IC (A) IC (A)

Fig. 11 - Typ. Energy Loss vs. IC Fig. 12 - Typ. Switching Time vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V. TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3) Diode clamp used: 30ETH06 (See C.T.3)
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 IRGP35B60PD
800 1000

700
tdOFF
600
EON

Swiching Time (ns)

100
500
Energy (µJ)

tdON
400
EOFF
300 tF
10
200
tR
100

0 1
0 10 20 30 40 50 0 10 20 30 40 50

RG (Ω) RG ( Ω)

Fig. 13 - Typ. Energy Loss vs. RG Fig. 14 - Typ. Switching Time vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 22A; VGE = 15V TJ = 125°C; L = 200µH; VCE = 390V, ICE = 22A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3) Diode clamp used: 30ETH06 (See C.T.3)
30 10000

Cies
25

20
Capacitance (pF)

1000
Eoes (µJ)

15 Coes

10 100

Cres
5

0 10
0 100 200 300 400 500 600 700 0 20 40 60 80 100
VCE (V) VCE (V)

Fig. 15- Typ. Output Capacitance Fig. 16- Typ. Capacitance vs. VCE
Stored Energy vs. VCE VGE= 0V; f = 1MHz

16 1.4

14

12 400V
Normalized V CE(on) (V)

1.2
10
VGE (V)

6
1.0
4

0 0.8
0 50 100 150 200 -50 0 50 100 150 200
Q G , Total Gate Charge (nC) T J (°C)

Fig. 17 - Typical Gate Charge vs. VGE Fig. 18 - Normalized Typ. VCE(on)
ICE = 22A vs. Junction Temperature
IC = 22A, VGE= 15V
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IRGP35B60PD
100 100

VR = 200V VR = 200V
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C

80

I F = 30A

I IRRM - (A)
t rr - (ns)

I F = 30A
IF = 15A
60 10
I F = 15A

I F = 5.0A
40

I F = 5.0A

20 1
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)

Fig. 19 - Typical Reverse Recovery vs. dif/dt Fig. 20 - Typical Recovery Current vs. dif/dt

800 1000
VR = 200V
VR = 200V
TJ = 125°C
TJ = 125°C
TJ = 25°C
TJ = 25°C

600
di(rec)M/dt - (A/µs)

IF = 30A
Q RR - (nC)

I F = 5.0A
400
I F = 15A I F = 15A

I F = 30A
IF = 5.0A

200

0 100
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)

Fig. 21 - Typical Stored Charge vs. dif/dt Fig. 22 - Typical di(rec)M/dt vs. dif/dt,

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 IRGP35B60PD
1

D = 0.50
Thermal Response ( Z thJC )

0.1 0.20

0.10
0.05
Ri (°C/W) τi (sec)
R1 R2 R3
R1 R2 R3
0.01 0.01 τJ τC
τJ τ
0.139 0.000257
0.02 τ1 τ2 τ3
τ1 τ2 τ3 0.077 0.001418
Ci= τi/Ri 0.194 0.020178
Ci= i/Ri
0.001
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10
Thermal Response ( Z thJC )

1 D = 0.50
0.20
0.10
Ri (°C/W) τi (sec)
R1 R2 R3
R1 R2 R3
0.1 0.05
τJ τC
τJ τ
0.363 0.000112
0.01 τ1 τ2 τ3
τ1 τ2 τ3 0.864 0.001184
0.02
Ci= τi/Ri 0.473 0.032264
0.01 Ci= i/Ri
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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IRGP35B60PD
L

L
VCC
DUT 80 V DUT
0 480V
1K Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

VCC
PFC diode L R=
ICM

DUT /
VCC
DRIVER DUT VCC
Rg Rg

Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit

REVERSE RECOVERY CIRCUIT

VR = 200V

0.01 Ω
L = 70µH
D.U.T.

D
dif/dt
ADJUST IRFP250
G

Fig. C.T.5 - Reverse Recovery Parameter

Test Circuit

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 IRGP35B60PD
450 45 450 45

400 40 400 40
TEST CURRENT
350 tf 35 350 35

300 30 300 30
90% ICE tr
250 25 250 25
VCE (V)

VCE (V)
ICE (A)

ICE (A)
90% test current
200 20 200 20
5% VCE
10% test current
150 15 150 15

100 5% ICE 10 100 10

50 5 50 5% VCE 5

0 0 0 Eon Loss 0
Eoff Loss
-50 -5 -50 -5
-0.20 0.00 0.20 0.40 0.60 0.80 9.00 9.20 9.40 9.60
Time(µs) Time (µs)

Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 25°C using Fig. CT.3 @ TJ = 25°C using Fig. CT.3

3
trr
IF
ta tb
0

4
Q rr
2
I RRM 0.5 I RRM
di(rec)M/dt 5

0.75 I RRM

1 di f /dt

1. dif/dt - Rate of change of current 4. Qrr - Area under curve defined by trr
through zero crossing and IRRM
trr X IRRM
2. I RRM - Peak reverse recovery current Qrr =
2
3. trr - Reverse recovery time measured
from zero crossing point of negative 5. di(rec)M/dt - Peak rate of change of
going IF to point where a line passing current during tb portion of trr
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current

Fig. WF3 - Reverse Recovery Waveform and

Definitions

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IRGP35B60PD

TO-247AC Package Outline Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

EXAMPLE: T HIS IS AN IRFPE30
WITH AS SEMBLY PART NUMBER
LOT CODE 5657 INTERNATIONAL
ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30

IN T HE ASSEMBLY LINE "H" LOGO 035H

56 57
Note: "P" in assembly line DATE CODE
position indicates "Lead-Free" ASSEMBLY YEAR 0 = 2000
LOT CODE WEEK 35
LINE H

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/04
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/