PD - 97403

IRG7PH30K10DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Low VCE (ON) Trench IGBT Technology VCES = 1200V
• Low switching losses
• 10 µS short circuit SOA IC = 16A, TC = 100°C
• Square RBSOA
• 100% of the parts tested for ILM G tSC ≥ 10µs, TJ(max) = 150°C
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode E VCE(on) typ. = 2.05V
• Tight parameter distribution
• Lead Free Package
n-channel

C
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to E
C
Low VCE (ON) and Low Switching losses G
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation TO-247AC

G C E
Gate Collector Emitter

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ TC = 25°C Continuous Collector Current 30
IC @ TC = 100°C Continuous Collector Current 16
INOMINAL Nominal Current 9.0
ICM Pulse Collector Current, Vge = 15V 27 A
ILM Clamped Inductive Load Current, Vge = 20V c 36
IF @ TC = 25°C Diode Continous Forward Current 30
IF @ TC = 100°C Diode Continous Forward Current 16
IFM Diode Maximum Forward Current d 36
VGE Continuous Gate-to-Emitter Voltage ±30 V
PD @ TC = 25°C Maximum Power Dissipation 180 W
PD @ TC = 100°C Maximum Power Dissipation 71
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) f ––– ––– 0.70
RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) f ––– ––– 1.44 °C/W
RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––

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IRG7PH30K10DPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA e CT6
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.11 — V/°C VGE = 0V, IC = 1mA (25°C-150°C) CT6

VCE(on) Collector-to-Emitter Saturation Voltage — 2.05 2.35 IC = 9.0A, VGE = 15V, TJ = 25°C 5,6,7

— 2.56 — V IC = 9.0A, VGE = 15V, TJ = 150°C 9,10,11

VGE(th) Gate Threshold Voltage 5.0 — 7.5 V VCE = VGE, IC = 400µA 9,10
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -15 — mV/°C VCE = VGE, IC = 400µA (25°C - 150°C) 11,12

gfe Forward Transconductance — 6.2 — S VCE = 50V, IC = 9.0A, PW = 80µs

ICES Collector-to-Emitter Leakage Current — 1.0 25 µA VGE = 0V, VCE = 1200V
— 400 — VGE = 0V, VCE = 1200V, TJ = 150°C
VFM Diode Forward Voltage Drop — 2.0 3.0 V IF = 9.0A 8

— 2.1 — IF = 9.0A, TJ = 150°C

IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±30V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref.Fig
Qg Total Gate Charge (turn-on) — 45 68 IC = 9.0A 24

Qge Gate-to-Emitter Charge (turn-on) — 8.7 13 nC VGE = 15V CT1

Qgc Gate-to-Collector Charge (turn-on) — 20 30 VCC = 600V

Eon Turn-On Switching Loss — 530 760 IC = 9.0A, VCC = 600V, VGE = 15V CT4

Eoff Turn-Off Switching Loss — 380 600 µJ RG = 22Ω, L = 1.0mH, LS = 150nH, TJ = 25°C
Etotal Total Switching Loss — 910 1360 Energy losses include tail & diode reverse recovery
td(on) Turn-On delay time — 14 31 IC = 9.0A, VCC = 600V, VGE = 15V CT4

tr Rise time — 24 41 ns RG = 22Ω, L = 1.0mH, LS = 150nH, TJ = 25°C

td(off) Turn-Off delay time — 110 130
tf Fall time — 38 56
Eon Turn-On Switching Loss — 810 — IC = 9.0A, VCC = 600V, VGE=15V 13,15

Eoff Turn-Off Switching Loss — 680 — µJ RG=22Ω, L=1.0mH, LS=150nH, TJ = 150°C e CT4

Etotal Total Switching Loss — 1490 — Energy losses include tail & diode reverse recovery WF1, WF2

td(on) Turn-On delay time — 11 — IC = 9.0A, VCC = 600V, VGE = 15V 14,16

tr Rise time — 23 — ns RG = 22Ω, L = 1.0mH, LS = 150nH CT4

td(off) Turn-Off delay time — 130 — TJ = 150°C WF1

tf Fall time — 260 — WF2

Cies Input Capacitance — 1070 — pF VGE = 0V 23

Coes Output Capacitance — 63 — VCC = 30V

Cres Reverse Transfer Capacitance — 26 — f = 1.0Mhz
TJ = 150°C, IC = 36A 4

RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 960V, Vp =1200V CT2

Rg = 22Ω, VGE = +20V to 0V

SCSOA Short Circuit Safe Operating Area 10 — — µs TJ = 150°C, VCC = 600V, Vp =1200V 22, CT3

Rg = 22Ω, VGE = +15V to 0V WF4

Erec Reverse Recovery Energy of the Diode — 710 — µJ TJ = 150°C 17,18,19

trr Diode Reverse Recovery Time — 140 — ns VCC = 600V, IF = 9.0A 20,21

Irr Peak Reverse Recovery Current — 12 — A VGE = 15V, Rg = 20Ω, L =1.0mH, Ls = 150nH WF3

Notes:
 VCC = 80% (VCES), VGE = 20V, L = 36µH, RG = 33Ω.
‚ Pulse width limited by max. junction temperature.
ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
„ Rθ is measured at TJ of approximately 90°C.

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 IRG7PH30K10DPbF
30 200

25
150
20

Ptot (W)
IC (A)

15
100

10

50
5

0
25 50 75 100 125 150 0
0 20 40 60 80 100 120 140 160
T C (°C) T C (°C)
Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature
100 100

10µsec
100µsec
10
1msec
IC (A)

IC (A)

10

DC
1

Tc = 25°C
Tj = 150°C
Single Pulse
0.1 1
1 10 100 1000 10000 10 100 1000 10000
VCE (V) VCE (V)
Fig. 3 - Forward SOA Fig. 4 - Reverse Bias SOA
TC = 25°C, TJ ≤ 150°C; VGE =15V TJ = 150°C; VGE = 20V

50 50
VGE = 18V VGE = 18V
VGE = 15V VGE = 15V
40 VGE = 12V 40 VGE = 12V
VGE = 10V VGE = 10V
VGE = 8.0V VGE = 8.0V
30 30
ICE (A)
ICE (A)

20 20

10 10

0 0
0 2 4 6 8 10 0 2 4 6 8 10
VCE (V) VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs TJ = 25°C; tp = 80µs

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IRG7PH30K10DPbF
50 50

40 VGE = 18V 40
VGE = 15V
VGE = 12V -40°C
30 VGE = 10V 25°C
30
VGE = 8.0V 150°C
ICE (A)

IF (A)
20 20

10 10

0 0
0 2 4 6 8 10 0.0 1.0 2.0 3.0 4.0 5.0
VCE (V) VF (V)

Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics
TJ = 150°C; tp = 80µs tp = 80µs
12 12

10 10

8 8
ICE = 4.5A ICE = 4.5A
VCE (V)
VCE (V)

ICE = 9.0A 6 ICE = 9.0A

6
ICE = 18A ICE = 18A
4
4

2
2

0
0
5 10 15 20
5 10 15 20
VGE (V)
VGE (V)
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE TJ = 25°C
TJ = -40°C
12 40
ICE, Collector-to-Emitter Current (A)

10
30

8
ICE = 4.5A
VCE (V)

ICE = 9.0A 20
6
ICE = 18A T J = 25°C
T J = 150°C
4
10

0
0 4 6 8 10 12 14 16
5 10 15 20
VGE, Gate-to-Emitter Voltage (V)
VGE (V)
Fig. 11 - Typical VCE vs. VGE Fig. 12 - Typ. Transfer Characteristics
TJ = 150°C VCE = 50V

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 IRG7PH30K10DPbF
2000 1000

tF
1600
EON tdOFF

Swiching Time (ns)

100
1200
Energy (µJ)

tR
800
EOFF 10 tdON

400

0 1
5 10 15 20 0 5 10 15 20
IC (A) IC (A)
Fig. 13 - Typ. Energy Loss vs. IC Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 1.0mH; VCE = 600V, RG = 22Ω; VGE = 15V TJ = 150°C; L = 1.0mH; VCE = 600V, RG = 22Ω; VGE = 15V
1600 1000

tF
1400
EON Swiching Time (ns)
1200 100
td OFF
Energy (µJ)

1000 tR

800 10
tdON
EOFF
600

400 1
0 20 40 60 80 100 0 20 40 60 80 100
RG (Ω) RG (Ω)

Fig. 15 - Typ. Energy Loss vs. RG Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L = 1.0mH; VCE = 600V, ICE = 9.0A; VGE = 15V TJ = 150°C; L = 1.0mH; VCE = 600V, ICE = 9.0A; VGE = 15V

18 18

RG = 5.0Ω
16
16

14
RG = 10Ω
14
IRR (A)

IRR (A)

12
RG = 20Ω 12
10

RG = 47Ω 10
8

6 8
4 6 8 10 12 14 16 18 20 0 10 20 30 40 50
IF (A) RG (Ω)

Fig. 17 - Typ. Diode IRR vs. IF Fig. 18 - Typ. Diode IRR vs. RG
TJ = 150°C TJ = 150°C

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IRG7PH30K10DPbF
18 3000

16
2500 5.0Ω
18A
10Ω
14

QRR (nC)
20Ω
IRR (A)

2000 47Ω

12
9.0A

1500
10

4.5A
8 1000
0 100 200 300 400 0 100 200 300 400

diF /dt (A/µs) diF /dt (A/µs)

Fig. 19 - Typ. Diode IRR vs. diF/dt Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 600V; VGE = 15V; IF = 9.0A; TJ = 150°C VCC = 600V; VGE = 15V; TJ = 150°C

1200 48 60

RG = 5.0 Ω
RG = 10 Ω 40 50
1000
RG = 20 Ω Tsc

RG = 47 Ω
Energy (µJ)

40

Current (A)
32
Time (µs)

800 Isc
24 30

600
16 20

400 8 10
0 5 10 15 20 8 10 12 14 16
IF (A) VGE (V)

Fig. 21 - Typ. Diode ERR vs. IF Fig. 22 - VGE vs. Short Circuit Time
TJ = 150°C VCC = 600V; TC = 150°C
10000 16
VCES = 600V
14 VCES = 400V
VGE, Gate-to-Emitter Voltage (V)

1000 Cies 12
Capacitance (pF)

10

100 8

Coes 6

10 Cres 4

1 0
0 100 200 300 400 500 0 10 20 30 40 50
VCE (V) Q G, Total Gate Charge (nC)

Fig. 23 - Typ. Capacitance vs. VCE Fig. 24 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 9.0A; L = 600µH

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 IRG7PH30K10DPbF
1

D = 0.50
Thermal Response ( Z thJC )

0.20
0.1
0.10
0.05 R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
τJ τC 0.0107 0.000005
0.02 τJ τ
τ1 τ2
0.1816 0.000099
τ3 τ4
0.01 0.01 τ1 τ2 τ3 τ4 0.3180 0.001305
Ci= τi/Ri 0.1910 0.009113
Ci i/Ri

SINGLE PULSE Notes:

( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
Thermal Response ( Z thJC )

1
D = 0.50

0.20
0.10
0.1
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
τJ τC 0.0103 0.000005
0.02 τJ τ
τ1 0.4761 0.000451
τ2 τ3 τ4
0.01 τ1 τ2 τ3 τ4 0.5749 0.001910
0.01 Ci= τi/Ri 0.3390 0.012847
Ci i/Ri
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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IRG7PH30K10DPbF
L

DUT VCC 80 V +
0 - DUT
1K VCC
Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

diode clamp /
DUT

L
4X

DC VCC -5V
DUT / VCC
DUT
DRIVER
Rg

SCSOA

Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

C force

R= VCC
ICM

100K

D1 22K
VCC C sense
DUT
DUT
Rg G force 0.0075µF

E sense

E force
Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit

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900 18 900 45

800 16 800 40
tf
700 14 700 35
tr
600 12 600 30

500 10 500 25
90% ICE TEST CURRENT

VCE (V)

I CE (A)
VCE (V)

90% test

ICE (A)
400 8 400 current 20

300 6 300 15
5% ICE
200
5% V CE
4 200 10% test 10
current
5% V CE
100 2 100 5

0 0 0 0
Eoff Loss Eon Loss
-100 -2 -100 -5
-5 0 5 10 -1.8 -0.8 0.2 1.2 2.2 3.2
time(µs) time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4 @ TJ = 150°C using Fig. CT.4

100 12.5 800 80

0 10 700 70
QRR VCE
-100 7.5 600 60
tRR
-200 5
500 ICE 50
-300 2.5
400 40
Vce (V)

Ice (A)
VF (V)

IF (A)

-400 0
300 30
-500 -2.5
Peak 200 20
-600 IRR -5

-700 -7.5
100 10
10%
Peak
-800 -10 0 0
IRR
-900 -12.5 -100 -10
-2.50 0.00 2.50 5.00 -5 0 5 10
time (µS) Time (uS)

Fig. WF3 - Typ. Diode Recovery Waveform Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.4 @ TJ = 150°C using Fig. CT.3

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IRG7PH30K10DPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

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TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/2009

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Authorized Distributor

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