DTD123TC
500mA/40V Digital transistor (with built-in resistor) Datasheet
l Outline
Parameter Value SOT-23
VCEO 40V
IC 500mA
R1 2.2kΩ
(SST3)
l Features l Inner circuit
1) Built-In Biasing Resistors, R1 = 2.2kΩ
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit) .
3) Only the on/off conditions need to be set
for operation, making the circuit design easy.
3)Only the on/off conditions need to be set for
operation, making the device desigh easy.
4) Complementary PNP Types: DTB123TC
l Application
INVERTER, INTERFACE, DRIVER
l Packaging specifications
Basic
Part No. Package Package Taping Reel size Tape width ordering Marking
size code (mm) (mm)
unit.(pcs)
SOT-23
DTD123TC 2924 T116 180 8 3000 F02
(SST3)
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© 2016 ROHM Co., Ltd. All rights reserved. 1/4 20160223 - Rev.001
DTD123TC Datasheet
l Absolute maximum ratings (Ta = 25°C)
Parameter Symbol Values Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage VCEO 40 V
Emitter-base voltage VEBO 5 V
Collector current IC*1 500 mA
Power dissipation PD*2 200 mW
Junction temperature Tj 150 ℃
Range of storage temperature Tstg -55 to +150 ℃
l Electrical characteristics (Ta = 25°C)
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Collector-base breakdown BVCBO IC = 50μA
voltage 50 - - V
Collector-emitter breakdown BVCEO IC = 1mA
voltage 40 - - V
Emitter-base breakdown voltage BVEBO IE = 50μA 5 - - V
Collector cut-off current ICBO VCB = 50V - - 500 nA
Emitter cut-off current IEBO VEB = 4V - - 500 nA
Collector-emitter saturation voltage VCE(sat) IC = 50mA, IB = 2.5mA - - 300 mV
DC current gain hFE*3 VCE = 5V, IC = 50mA 100 250 600 -
Input resistance R1 - 1.54 2.2 2.86 kΩ
VCE = 10V, IE = -50mA,
Transition frequency f T*1 - 200 - MHz
f = 100MHz
*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 Pulsed
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© 2016 ROHM Co., Ltd. All rights reserved. 2/4 20160223 - Rev.001
DTD123TC Datasheet
l Electrical characteristic curves (Ta =25°C)
Fig.1 Grounded Emitter Propagation Fig.2 Grounded Emitter Output
Characteristics Characteristics
Fig.3 DC Current Gain vs. Collector Current Fig.4 Collector-Emitter Saturation Voltage
vs. Collector Current
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© 2016 ROHM Co., Ltd. All rights reserved. 3/4 20160223 - Rev.001
DTD123TC Datasheet
l Dimensions
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© 2016 ROHM Co., Ltd. All rights reserved. 4/4 20160223 - Rev.001
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confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
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7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
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Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
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Notice-PGA-E Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Datasheet
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DTD123TC - Web Page
Distribution Inventory
Part Number DTD123TC
Package SOT-23
Unit Quantity 3000
Minimum Package Quantity 3000
Packing Type Taping
Constitution Materials List inquiry
RoHS Yes
