Product Datasheet

Maximus
Industrial M.2 2280 PCIe SSD
NVME SSD
Product DataSheet
 Product Datasheet

1. Introduction............................................................................................................................................... 5

1.1. General Description............................................................................................................................... 5

1.2. Block Diagram....................................................................................................................................... 5

2. Product Specifications........................................................................................................................... 6

3. Environmental Specifications............................................................................................................. 8

3.1. Environmental Conditions..................................................................................................................... 8

3.1.1. Temperature and Humidity...................................................................................................... 8

3.1.2. Shock........................................................................................................................................9
3.1.3. Vibration.................................................................................................................................. 9
3.1.4. Drop......................................................................................................................................... 9
3.1.5. Bending.................................................................................................................................... 9
3.1.6. Torque...................................................................................................................................... 9
3.1.7. Electrostatic Discharge (ESD)...............................................................................................10
3.1.8. EMI Compliance....................................................................................................................10

3.2. MTBF...................................................................................................................................................10

3.3. Certification & Compliance.................................................................................................................10

4. Electrical Specifications...................................................................................................................... 11

4.1. Supply Voltage.....................................................................................................................................11

4.2. Power Consumption.............................................................................................................................11

5. Interface................................................................................................................................................... 13

5.1. Pin Assignment and Descriptions........................................................................................................13

6. Supported Commands......................................................................................................................... 16

6.1. NVMe Command List......................................................................................................................... 16

6.2. Identify Device Data............................................................................................................................17

6.3. SMART Attributes...............................................................................................................................21

7. Physical Dimension...............................................................................................................................23

8. Terminology.............................................................................................................................................27

9. Barcode description..............................................................................................................................27
10. Partnumber decoder........................................................................................

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 Product Datasheet

Revision History
Revision Draft Date History Author

1.0 New release Golden Lee

1.1 Add wide temperature support Golden Lee

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 Product Datasheet

Product Overview

 Capacity  Advanced Flash Management

￭ 120GB (128GB) up to 960GB (1TB) ￭ Static and Dynamic Wear Leveling
 Form Factor ￭ Bad Block Management
￭ M.2 2280-S3-B+M ￭ TRIM
 PCIe Interface ￭ SMART
￭ NVMe PCIe Gen3 x2 ￭ Over-Provision
 Compliance  Power Management
￭ NVMe 1.3 ￭ Support APST
￭ PCI Express Base 3.1 ￭ Support ASPM
 Flash Interface ￭ Support L1.2
￭ Flash Type: 3D TLC (BiCS3)  Temperature RangeNote5
￭ Transfer rate up to 533Mbps ￭ Operation (Standard): 0°C ~ 70°C
￭ Up to 4pcs of BGA flash ￭ Operation (Gold): -25°C ~ 85°C
 Performance Note1 ￭ Operation (Wide): -40°C ~ 85°C
￭ Read up to 1,600 MB/s ￭ Storage: -40°C ~ 85°C
￭ Write up to 1,100 MB/s  Compliant
 Power Consumption Note2 ￭ RoHS
￭ Active mode: < 5W  Features Support List
￭ Idle mode: < 50mW ￭ End to end data path protection
￭ L1.2 < 2mW ￭ Thermal throttling
￭ SmartECCTM
 Reliability
￭ SmartRefreshTM
￭ MTBF more than 2,000,000 hours
￭ Drive log
￭ Uncorrectable Bit Error Rate(UBER)
￭ Support of TCG OPALNote3
< 1 sector per 1016 bits read
￭ Support of TCG PyriteNote4

Notes:
1. Refer to Chapter 2 for more details.
2. Refer to Chapter 4, section 4.2 power consumption for more details.
3. Support by a separate firmware version. Further information available upon request.
4. Support by a separate firmware version. Further information available upon request.
5. Temperature is measured by SMART temperature. Active airflow is recommend within the system for
maintaining proper device operating temperature on heavier workloads.

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1. INTRODUCTION

1.1. General Description

Maximus ’s M.2 2280 PCIe solid state Drive delivers all the advantages of flash disk technology with PCIe
Gen3 x2 interface and is fully compliant with the standard Next Generation Form Factor (NGFF) called M.2
Card Format, which is generated by Intel. The M.2 2280 could provide a wide range capacity up to
960GB(1TB) and reach up to 1,600MB/s read as well as 1,100MB/s write high performance based on
Toshiba’s BiCS3 Toggle TLC flash (with 256MB/512MB DDR3L cache enabled and measured by
CrystalDiskMark v5.0). Moreover, the power consumption of the M.2 2280 is much lower than traditional
hard drives, making it the best embedded solution for new platforms.

1.2. Block Diagram

VCC
DC-DC Flash
Flash memory
Vcore Controller
bus
VCC DDR3L
Data Buffer
PCIe
A+
Interface PCIe PHY
Gen3 x2 Data
A-
NVMe 1.2 Flash
B+ Array

B- Control signal

M.2 2280 PCIe SSD Block Diagram

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 Product Datasheet
2. PRODUCT SPECIFICATIONS
 Capacity
￭ 120GB (128GB) up to 960GB (1TB)
 Electrical/Physical Interface
￭ PCIe Interface
￭ Compliant with NVMe 1.3
￭ PCIe Gen3 x 2 lane & backward compatible to PCIe Gen2 and Gen1
￭ Support up to QD 128 with queue depth of up to 64K
￭ Support power management
 Supported NAND Flash
￭ Support Toshiba BiCS3 TLC
￭ Support up to 4pcs of BGA flash
 ECC Scheme
￭ Applies the Strong ECCTM (SECC) of ECC algorithm
 Sector Size Support
￭ 512B
￭ 4KB
 UART function
 GPIO
 Support SMART and TRIM commands
 LBA Range
￭ IDEMA standard

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 Performance
￭ 3D TLC
Sequential Random
Flash (CDM) (8GB Burst)
Capacity CE# Flash Type
Structure Read Write Read Write
(MB/s) (MB/s) (KIOPS) (KIOPS)
120GB
64GB x 2 4 BGA, BiCS3 TLC 1500 450 90 100
(128GB)
240GB
64GB x 4 8 BGA, BiCS3 TLC 1600 850 180 150
(256GB)
480GB
128GB x 4 16 BGA, BiCS3 TLC 1600 1000 230 160
(512GB)
960GB
256GB x 4 32 BGA, BiCS3 TLC 1600 1100 240 180
(1TB)

Notes:
1. The performance was estimated based on Toshiba NAND flash.
2. Performance may differ according to flash configuration and platform.
3. The table above is for reference only. Any criteria for accepting goods shall be discussed based on
different flash configuration.
4. Performance is measured with the follow conditions
(a) CrystalDiskMark 5.1.2, 1GB range, QD=32, Thread=1
(b) IOMeter, 8GB range, 4K data size, QD=32 (3) ATTO, transfer size 8192KB

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3. ENVIRONMENTAL SPECIFICATIONS

3.1. Environmental Conditions

3.1.1. Temperature and Humidity

 Temperature:
 Storage: -40°C to 85°C
 Operational (Standard grade): 0°C to 70°C
 Operational (gold grade): -25°C to 85°C
 Operational (Wide grade): -40°C to 85°C
 Humidity:
 Standard grade: RH 90% under 40°C (operational)

 High Temperature Test Condition

Temperature Humidity
Operation 70°C/85°C 0% RH
Storage 85°C 0% RH
Result: No any abnormality is detected.

 Low Temperature Test Condition

Temperature Humidity
Operation 0°C/-25°C/-40°C 0% RH
Storage -40°C 0% RH
Result: No any abnormality is detected.

 High Humidity Test Condition

Temperature Humidity Test Time
Operation 55°C 95% RH 72 hours
Storage 55°C 95% RH 96 hours
Result: No any abnormality is detected.

 Temperature Cycle Test

Temperature Test Time Cycle
0°C/-25°C/-40°C 30 min
Operation 20 cycles
70°C/85°C 30 min
-40°C 30 min
Storage 50 cycles
85°C 30 min
Result: No any abnormality is detected.

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3.1.2. Shock
 Shock Specification
Acceleration Force Half Sin Pulse Duration
Non-Operational 1500G 0.5ms
Operational 1500G 0.5ms
Result: No any abnormality is detected.

3.1.3. Vibration
 Vibration Specification
Condition
Vibration Orientation
Frequency/Displacement Frequency/Acceleration
Operational 20Hz~80Hz/1.52mm 80Hz~2000Hz/20G X, Y, Z axis/60 min for each
Result: No any abnormality is detected.

3.1.4. Drop
 Drop Specification
Height of Drop Number of Drop
Non-operational 80cm free fall 6 face of each unit, 2 times each
Result: No any abnormality is detected.

3.1.5. Bending
 Bending Specification
Force Action
Non-operational ≥ 20N Hold 1min/5times
Result: No any abnormality is detected.

3.1.6. Torque
 Contact ESD Specification
Force Action
Non-operational 0.5N-m or ±2.5 deg Hold 1min/5times
Result: No any abnormality is detected.

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3.1.7. Electrostatic Discharge (ESD)
 Contact ESD Specification
Specification +/- 4KV Result
EN 55024, CISPR 24 Device functions are affected, but EUT will be back
PASS
EN61000-4-2 and IEC 61000-4-2 to its normal or operational state automatically.

3.1.8. EMI Compliance

Specification
EN 55032, CISPR 32 (CE)
AS/NZS CISPR 32 (CE)
ANSI C63.4 (FCC)
CVVI-CISPR 32 (VCCI)
CNS 13438 (BSMI)

3.2. MTBF
MTBF, an acronym for Mean Time between Failures, is a measure of a device’s reliability. Its value
represents the average time between a repair and the next failure. The measure is typically in units of hours.
The higher the MTBF value, the higher the reliability of the device. The predicted result of Maximus ’s M.2
2280 PCIe Drive is up to 2,000,000 hours.

3.3. Certification & Compliance

 RoHS
 WHQL
 PCI Express Base 3.1
 UNH-IOL NVM Express Logo

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4. ELECTRICAL SPECIFICATIONS

4.1. Supply Voltage

Parameter Rating
Min = 3.14V
Operating Voltage
Max = 3.47V
Rise Time (Max/Min) 100ms / 0.1ms
Fall Time (Max/Min) 5s / 1ms
Min. off TimeNote1 1s
Note:
1. Minimum time between power removed from SSD (Vcc < 100mW) and power re-applied to the drive.

4.2. Power Consumption

￭ Power consumption with Toshiba BiCS3 TLC in mW

Read Write Read Write
Capacity Flash Structure CE#
(Max) (Max) (Avg.) (Avg.)
120GB (128GB) 64GB x 2 4 2800 2200 2700 2200
240GB (256GB) 64GB x 4 8 3200 2800 3200 2700
480GB (512GB) 128GB x 4 16 3300 3000 3300 2900
960GB (1TB) 256GB x 4 32 4000 3300 4000 3200
Unit: mW
Notes
1. Based on E8FM1xxx-series under ambient temperature.
2. Use CrystalDiskMark 5.1.2 with the setting of 1000MB. Sequentially read and write the disk for 5 times,
and measure power consumption during sequential Read [1/5]~[5/5] or sequential Write [1/5]~[5/5]
3. Power Consumption may differ according to flash configuration and platform.
4. The measured power voltage is 3.3V.

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￭ Power consumption with Toshiba BiCS3 TLC in mW

Flash Seq. Write
Capacity CE# PS3 PS4
Structure PS0 PS1 PS2
120GB (128GB) 64GB x 2 4 2200 1700 1600 35 2
240GB (256GB) 64GB x 4 8 2800 1800 1700 40 2
480GB (512GB) 128GB x 4 16 3100 1800 1700 45 2
960GB (1TB) 256GB x 4 32 3500 2700 2300 45 2
Unit: mW
Notes
1. Based on E8FM1xxx-series under ambient temperature.
2. The average value of power consumption is achieved based on 100% conversion efficiency.
3. The measured power voltage is 3.3V.
4. The temperature of a storage device in PS1 should remain constant or should slightly decrease for all
workloads so the actual power in PS1 should be lower than PS0.
5. The temperature of a storage device in PS2 should decrease sharply for all workloads so the actual power
in PS2 should be lower than PS1.

￭ Mobile Mark 2014 Average Power consumption with Toshiba BiCS3 TLC
Capacity Flash Structure CE# Primary
120GB (128GB) 64GB x 2 4 < 300mW
240GB (256GB) 64GB x 4 8 < 300mW
480GB (512GB) 128GB x 4 16 < 300mW
960GB (1TB) 256GB x 4 32 TBA
Unit: mW
Notes
1. Based on E8FM1xxx-series under ambient temperature.
2. The measured power voltage is 3.3V.
3. The average value of power consumption is achieved based on 100% conversion efficiency.

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 Product Datasheet
5. INTERFACE

5.1. Pin Assignment and Descriptions

The follow table defines the signal assignment of the internal NGFF connector for SSD usage, described in
the PCI Express M.2 Specification version 1.0 of the PCI-SIG.
Pin # SATA Pin Description
1 GND Ground
2 3.3V 3.3V source
3 GND Ground
4 3.3V 3.3V source
5 N/C No connect
6 N/C No connect
7 N/C No connect
8 N/C No connect
9 N/C No connect
10 LED1#(O) Status indicators via LED devices
11 N/C No connect
12 Module Key B
13 Module Key B
14 Module Key B
15 Module Key B
Module Key
16 Module Key B
17 Module Key B
18 Module Key B
19 Module Key B
20 N/C No connect
21 GND Ground
22 N/C No connect
23 N/C No connect
24 N/C No connect
25 N/C No connect
26 N/C No connect
27 GND Ground
28 N/C No connect
29 PETn1 PCIe TX Differential signal defined by the PCI Express M.2 spec
30 N/C No connect
Pin # SATA Pin Description
31 PETp1 PCIe TX Differential signal defined by the PCI Express M.2 spec

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32 N/C No connect
33 GND Ground
34 N/C No connect
35 PERn1 PCIe RX Differential signal defined by the PCI Express M.2 spec
36 N/C No connect
37 PERp1 PCIe RX Differential signal defined by the PCI Express M.2 spec
38 N/C No connect
39 GND Ground
40 SMB_CLK (I/O)(0/1.8V) SMBus Clock; Open Drain with pull-up on platform.
41 PETn0 PCIe TX Differential signal defined by the PCI Express M.2 spec
42 SMB_DATA (I/O)(0/1.8V) SMBus Data; Open Drain with pull-up on platform.
43 PETp0 PCIe TX Differential signal defined by the PCI Express M.2 spec
Alert notification to master; Open Drain with pull-up on platform; Active
44 ALERT#(O)(0/1.8V)
low.
45 GND Ground
46 N/C No connect
47 PERn0 PCIe RX Differential signal defined by the PCI Express M.2 spec
48 N/C No connect
49 PERp0 PCIe RX Differential signal defined by the PCI Express M.2 spec
PE-Reset is a functional reset to the card as defined by the PCIe Mini CEM
50 PERST#(I)(0/3.3V)
specification.
51 GND Ground
Clock Request is a reference clock request signal as defined by the PCIe
52 CLKREQ#(I/O)(0/3.3V)
Mini CEM specification; Also used by L1 PM Substates.
PCIe Reference Clock signals (100 MHz) defined by the PCI Express M.2
53 REFCLKn
spec.
PCIe PME Wake.
54 PEWAKE#(I/O)(0/3.3V)
Open Drain with pull up on platform; Active Low.
PCIe Reference Clock signals (100 MHz) defined by the PCI Express M.2
55 REFCLKp
spec.
Manufacturing Data line. Used for SSD manufacturing only.
Reserved for
56 Not used in normal operation.
MFG DATA
Pins should be left N/C in platform Socket.
57 GND Ground
Manufacturing Clock line. Used for SSD manufacturing only.
58 Reserved for MFG CLOCK Not used in normal operation.
Pins should be left N/C in platform Socket.
Pin # SATA Pin Description
59 Module Key M Module Key

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60 Module Key M
61 Module Key M
62 Module Key M
63 Module Key M
64 Module Key M
65 Module Key M
66 Module Key M
67 N/C No Connect
SUSCLK(32KHz) 32.768 kHz clock supply input that is provided by the platform
68
(I)(0/3.3V) chipset to reduce power and cost for the module.
69 PEDET (NC-PCIe) Host I/F Indication; No Connect for PCIe.
70 3.3V 3.3V source
71 GND Ground
72 3.3V 3.3V source
73 GND Ground
74 3.3V 3.3V source
75 GND Ground

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6. SUPPORTED COMMANDS

6.1. NVMe Command List

Table 6-1 Admin Commands

Op-Code Command Description
00h Delete I/O Submission Queue
01h Create I/O Submission Queue
02h Get Log Page
04h Delete I/O Completion Queue
05h Create I/O Completion Queue
06h Identify
08h Abort
09h Set Features
0Ah Get Features
0Ch Asynchronous Event Request
10h Firmware Activate
11h Firmware Image Download

Table 6-2 Admin Commands – NVM Command Set Specific

Op-Code Command Description
80h Format NVM
81h Security Send
82h Security Receive

Table 6-3 NVM Commands

Op-Code Command Description
00h Flush
01h Write
02h Read
04h Write Uncorrectable
05h Compare
08h Write Zeroes
09h Dataset Management

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6.2. Identify Device Data

The following table details the sector data returned by the IDENTIFY DEVICE command.

 Identify Controller Data Structure

Bytes Description
01:00 PCI Vendor ID (VID)
03:02 PCI Subsystem Vendor ID (SSVID)
23:04 Serial Number (SN)
63:24 Model Number (MN)
71:64 Firmware Revision (FR)
72 Recommended Arbitration Burst (RAB)
75:73 IEEE OUI Identifier (IEEE)
76 Controller Multi-Path I/O and Namespace Sharing Capabilities (CMIC)
77 Maximum Data Transfer Size (MDTS)
79:78 Controller ID (CNTLID)
83:80 Version (VER)
87:84 RTD3 Resume Latency (RTD3R)
91:88 RTD3 Entry Latency (RTD3E)
95:92 Optional Asynchronous Events Supported (OAES)
239:96 Reserved
255:240 Refer to the NVMe Management Interface Specification for definition
257:256 Optional Admin Command Support (OACS)
258 Abort Command Limit (ACL)
259 Asynchronous Event Request Limit (AERL)
260 Firmware Updates (FRMW)
261 Log Page Attributes (LPA)
262 Error Log Page Entries (ELPE)
263 Number of Power States Support (NPSS)
264 Admin Vendor Specific Command Configuration (AVSCC)
265 Autonomous Power State Transition Attributes (APSTA)
267:266 Warning Composite Temperature Threshold (WCTEMP)
269:268 Critical Composite Temperature Threshold (CCTEMP)
271:270 Maximum Time for Firmware Activation (MTFA)
275:272 Host Memory Buffer Preferred Size (HMPRE)
279:276 Host Memory Buffer Minimum Size (HMMIN)
295:280 Total NVM Capacity (TNVMCAP)
Bytes Description

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311:296 Unallocated NVM Capacity (UNVMCAP)
315:312 Replay Protected Memory Block Support (RPMBS)
511:316 Reserved
NVM Command Set Attributes
512 Submission Queue Entry Size (SQES)
513 Completion Queue Entry Size (CQES)
515:514 Reserved
519:516 Number of Namespaces (NN)
521:520 Optional NVM Command Support (ONCS)
523:522 Fused Operation Support (FUSES)
524 Format NVM Attributes (FNA)
525 Volatile Write Cache (VWC)
527:526 Atomic Write Unit Normal (AWUN)
529:528 Atomic Write Unit Power Fail (AWUPF)
530 NVM Vendor Specific Command Configuration (NVSCC)
531 Reserved
533:532 Atomic Compare & Write Unit (ACWU)
535:534 Reserved
539:536 SGL Support (SGLS)
703:540 Reserved
IO Command Set Attributes
2047:704 Reserved
2079:2048 Power State 0 Descriptor
2111:2080 Power State 1 Descriptor
2143:2112 Power State 2 Descriptor
2175:2144 Power State 3 Descriptor
2207:2176 Power State 4 Descriptor
… N/A
3071:3040 Power State 31 Descriptor
Vendor Specific
4095:3072 Vendor Specific (VS)

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 Identify Namespace Data Structure & NVM Command Set Specific

Bytes Description
7:0 Namespace Size (NSZE)
15:8 Namespace Capacity (NCAP)
23:16 Namespace Utilization (NUSE)
24 Namespace Features (NSFEAT)
25 Number of LBA Formats (NLBAF)
26 Formatted LBA Size (FLBAS)
27 Metadata Capabilities (MC)
28 End-to-end Data Protection Capabilities (DPC)
29 End-to-end Data Protection Type Settings (DPS)
30 Namespace Multi-path I/O and Namespace Sharing Capabilities (NMIC)
31 Reservation Capabilities (RESCAP)
119:32 Reserved
127:120 IEEE Extended Unique Identifier (EUI64)
131:128 LBA Format 0 Support (LBAF0)
135:132 LBA Format 1 Support (LBAF1)
139:136 LBA Format 2 Support (LBAF2)
143:140 LBA Format 3 Support (LBAF3)
147:144 LBA Format 4 Support (LBAF4)
151:148 LBA Format 5 Support (LBAF5)
155:152 LBA Format 6 Support (LBAF6)
159:156 LBA Format 7 Support (LBAF7)
163:160 LBA Format 8 Support (LBAF8)
167:164 LBA Format 9 Support (LBAF9)
171:168 LBA Format 10 Support (LBAF10)
175:172 LBA Format 11 Support (LBAF11)
179:176 LBA Format 12 Support (LBAF12)
183:180 LBA Format 13 Support (LBAF13)
187:184 LBA Format 14 Support (LBAF14)
191:188 LBA Format 15 Support (LBAF15)
383:192 Reserved
4095:384 Vendor Specific (VS)

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 List of Identify Namespace Data Structure for Each Capacity

Capacity Byte[7:0]:
(GB) Namespace Size (NSZE)
120 DF94BB0h
128 EE7C2B0h
240 1BF244B0h
256 1DCF32B0h
480 37E436B0h
512 3B9E12B0h
960 6FC81AB0h
1024 773BD2B0h

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6.3. SMART Attributes

 SMART Attributes (Log Identifier 02h)

Bytes Index Bytes Description
[0] 1 Critical Warning
[2:1] 2 Composite Temperature
[3] 1 Available Spare
[4] 1 Available Spare Threshold
[5] 1 Percentage Used
[31:6] 26 Reserved
[47:32] 16 Data Units Read
[63:48] 16 Data Units Written
[79:64] 16 Host Read Commands
[95:80] 16 Host Write Commands
[111:96] 16 Controller Busy Time
[127:112] 16 Power Cycles
[143:128] 16 Power On Hours
[159:144] 16 Unsafe Shutdowns
[175:160] 16 Media and Data Integrity Errors
[191:176] 16 Number of Error Information Log Entries
[195:192] 4 Warning Composite Temperature Time
[199:196] 4 Critical Composite Temperature Time
[201:200] 2 Temperature Sensor 1
[203:202] 2 Temperature Sensor 2
[205:204] 2 Temperature Sensor 3
[207:206] 2 Temperature Sensor 4

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7. PHYSICAL DIMENSION
Dimension: 80mm(L) x 22mm(W) x 1.50mm(H)
Top View

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Bottom View

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Side View

*Notes:

1. =Max Component Height

2. =No Component

3. =No Component / Signal Vias / Signal Copper / Print

4. General Tolerance: ±0.15mm

5. is IQC inspection dimension

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8. TERMINOLOGY

The following table is to list out the acronyms that have been applied throughout the document.

Term Definitions
ATTO Commercial performance benchmark application
DDR Double data rate (SDRAM)
ASPM Active States Power Management
APST Autonomous Power State Transition
LBA Logical block addressing
MTBF Mean time between failures
PCIe PCI Express / Peripheral Component Interconnect Express
S.M.A.R.T. Self-monitoring, analysis and reporting technology

9. BARCODE DESCRIPTION

MUS IND PCNV XX XX XX T

MUS-Maximus
IND-Industrial
PCNV-PCIE/MVME
XX-2280
XX-Temperature 0-70C/-25-+85C/-40-+85C
XX-Capacity 120GB-1TB
T-3D TLC

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