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Mwre Pra

The document discusses the Gunn Diode Oscillator, detailing its definition, history, construction, and working principle. It highlights the Gunn effect, which enables high-frequency oscillation in certain semiconductors, and describes the characteristics of the Gunn diode, particularly its negative resistance region. Applications of the Gunn diode are also mentioned, emphasizing its role as both an oscillator and amplifier.

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resuprasanna810
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6 views17 pages

Mwre Pra

The document discusses the Gunn Diode Oscillator, detailing its definition, history, construction, and working principle. It highlights the Gunn effect, which enables high-frequency oscillation in certain semiconductors, and describes the characteristics of the Gunn diode, particularly its negative resistance region. Applications of the Gunn diode are also mentioned, emphasizing its role as both an oscillator and amplifier.

Uploaded by

resuprasanna810
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SUBJECT:MICROWAVE AND RADAR

ENGINEERING

TOPIC:GUNN DIODE OSCILLATOR

Submitted By:
20P61A04H1
ECE -C
CONTENTS:
 DEFINITION
 HISTORY
 CONSTRUCTION
 GUNN EFFECT
 WORKING PRINCIPLE
 APLLICATIONS
DEFINITION:
HISTORY:
CONSTRUCTION:

Source material:

Most common materials:


Negative resistance in Gunn Diode:
GUNN EFFECT:
High-frequency oscillation of electrical current flowing through certain semiconducting
solids. The effect is used in a solid-state device, the Gunn diode, to produce short radio
waves called microwaves. The effect was discovered by J.B. Gunn in the early 1960s.
WORKING OF GUNN DIODE:

 In the Gunn diode, three regions exist: two are heavily N-


doped on each terminal, with a thin layer of lightly n-doped
material between them. When a voltage is applied to the
device, the electrical gradient will be largest across the thin
middle layer. If the voltage increases, the layer's current
will first increase.
GUNN DIODE CHARACTERSITICS:
 The current-voltage relationship characteristics of a
Gunn diode are shown in the above graph with its
negative resistance region. These characteristics are
similar to the characteristics of the tunnel diode.
 As shown in the above graph, initially the current
starts increasing in this diode, but after reaching a
certain voltage level (at a specified voltage value
called as threshold voltage value), the current
decreases before increasing again. The region where
the current falls is termed as a negative resistance
region, and due to this it oscillates. In this negative
resistance region, this diode acts as both oscillator
and amplifier, as in this region, the diode is enabled
to amplify signals.
APPLICATIONS:
THANK YOU

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