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2N3055

The 2N3055 is a general-purpose NPN power transistor with a DC current gain of 20-70 and a maximum collector current of 15A. It features a collector-emitter saturation voltage of 1.1V at 4A and has various maximum ratings including a collector-base voltage of 100V. The transistor is suitable for switching and amplifier applications, with thermal characteristics indicating a junction to case thermal resistance of 1.52°C/W.

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marphi01
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27 views5 pages

2N3055

The 2N3055 is a general-purpose NPN power transistor with a DC current gain of 20-70 and a maximum collector current of 15A. It features a collector-emitter saturation voltage of 1.1V at 4A and has various maximum ratings including a collector-base voltage of 100V. The transistor is suitable for switching and amplifier applications, with thermal characteristics indicating a junction to case thermal resistance of 1.52°C/W.

Uploaded by

marphi01
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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2N3055

2N3055

2N3055
2N3055

DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE=20-70@IC = 4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
·Complement to Type MJ2955

APPLICATIONS
·Designed for general-purpose switching and amplifier
applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 100 V

VCER Collector-Emitter Voltage 70 V

VCEO Collector-Emitter Voltage 60 V

VEBO Emitter-Base Voltage 7 V

IC Collector Current-Continuous 15 A

IBB Base Current 7 A

PC Collector Power Dissipation@TC=25℃ 115 W

TJ Junction Temperature 200 ℃

Tstg Storage Temperature -65~200 ℃

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 1.52 ℃/W

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2N3055

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; IB=0 60 V

VCER(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; RBE=100Ω 70 V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A


B 1.1 V

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A 3.0 V

VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 4V 1.5 V

ICEO Collector Cutoff Current VCE= 30V; IB=0B 0.7 mA

VCE= 100V; VBE(off)= 1.5V 1.0


ICEX Collector Cutoff Current mA
VCE= 100V; VBE(off)= 1.5V,TC=150℃ 5.0

IEBO Emitter Cutoff Current VEB= 7.0V; IC=0 5.0 mA

hFE-1 DC Current Gain IC= 4A ; VCE= 4V 20 70

hFE-2 DC Current Gain IC= 10A ; VCE= 4V 5.0

Second Breakdown Collector


Is/b VCE= 40V,t= 1.0s,Nonrepetitive 2.87 A
Current with Base Forward Biased

fT Current Gain-Bandwidth Product IC= 0.5A ; VCE= 10V;f=1.0MHz 2.5 MHz

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2N3055

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