IRF540

N-CHANNEL 100V - 0.055 Ω - 22A TO-220

LOW GATE CHARGE STripFET™ II POWER MOSFET

TYPE VDSS RDS(on) ID

IRF540 100 V <0.077 Ω 22 A

■ TYPICAL RDS(on) = 0.055Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE
■ APPLICATION ORIENTED 2
3

CHARACTERIZATION 1

TO-220
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DESCRIPTION
This MOSFET series realized with STMicroelectronics
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unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
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therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
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Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
INTERNAL SCHEMATIC DIAGRAM
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APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
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■ UPS AND MOTOR CONTROL

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Ordering Information
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SALES TYPE MARKING PACKAGE PACKAGING
IRF540 IRF540& TO-220 TUBE

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ABSOLUTE MAXIMUM RATINGS
Symbol
e P Parameter Value Unit
VDS
VDGR
l et Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
100
100
V
V

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VGS
o Gate- source Voltage ± 20 V

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ID
IDM(•)
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
22
15
88
A
A
A
Ptot Total Dissipation at TC = 25°C 85 W
Derating Factor 0.57 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 9 V/ns
EAS (2) Single Pulse Avalanche Energy 220 mJ
Tstg Storage Temperature
-55 to 175 °C
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area. 1) ISD ≤22A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX
(2) Starting T j = 25 oC, ID = 12A, VDD = 30V

February 2003 1/8

NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &
 IRF540

THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.76 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Tl Maximum Lead Temperature For Soldering Purpose Typ 300 °C

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Drain-source ID = 250 µA, VGS = 0 100 V
V(BR)DSS
Breakdown Voltage

IDSS Zero Gate Voltage VDS = Max Rating 1 µA

Drain Current (VGS = 0) VDS = Max Rating TC = 125°C 10 µA

Gate-body Leakage VGS = ± 20V ±100 nA

IGSS
Current (VDS = 0)

ON (1)
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Symbol Parameter Test Conditions Min. Typ. Max.

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VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 2 3

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Ω
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V ID = 11 A
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0.055

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0.077

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DYNAMIC
Symbol Parameter Test Conditions
le t Min. Typ. Max. Unit

gfs (*) Forward Transconductance VDS =25 V

s o ID = 11 A 20 S

Ciss
Coss
Input Capacitance
Output Capacitance
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VDS = 25V, f = 1 MHz, VGS = 0 870
125
pF
pF
Crss Reverse Transfer
Capacitance
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 IRF540

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(on) Turn-on Delay Time VDD = 50 V ID = 12 A 60 ns

tr Rise Time RG = 4.7 Ω VGS = 10 V 45 ns
(Resistive Load, Figure 3)
Qg Total Gate Charge VDD= 80 V ID= 22 A VGS= 10V 30 41 nC
Qgs Gate-Source Charge 6 nC
Qgd Gate-Drain Charge 10 nC

SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(off) Turn-off Delay Time VDD = 50 V ID = 12 A 50 ns

tf Fall Time RG = 4.7Ω, VGS = 10 V 20 ns
(Resistive Load, Figure 3)

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SOURCE DRAIN DIODE
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Symbol Parameter Test Conditions Min. Typ. Max. Unit

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ISD Source-drain Current 22 A
ISDM (•)

VSD (*)
Source-drain Current (pulsed)

Forward On Voltage ISD = 22 A VGS = 0

P r 88

1.3
A

trr Reverse Recovery Time ISD = 22 A

te
di/dt = 100A/µs 100 ns
Qrr
IRRM
Reverse Recovery Charge
Reverse Recovery Current
VDD = 30 V

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(see test circuit, Figure 5)le
Tj = 150°C 375
7.5
nC
A
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
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Safe Operating Area
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 IRF540

Output Characteristics Transfer Characteristics

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Transconductance Static Drain-source On Resistance

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Gate Charge vs Gate-source Voltage Capacitance Variations

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 IRF540

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

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Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature

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 IRF540

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

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Fig. 3: Switching Times Test Circuits For Resistive Fig. 4: Gate Charge test Circuit
Load

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Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

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 IRF540

TO-220 MECHANICAL DATA

mm. inch.
DIM.
MIN. TYP. MAX. MIN. TYP. TYP.
A 4.4 4.6 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.40 0.645
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L3 28.90 1.137
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L4 13 14 0.511
d u 0.551
L5
L6
2.65
15.25
2.95
15.75
0.104
0.600 r o 0.116
0.620
L7 6.20 6.60 0.244
e P 0.260
L9 3.50 3.93
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0.137 0.154

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DIA 3.75 3.85 0.147 0.151

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 IRF540

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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

Oauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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