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3DD200

The document provides the product specification for the 3DD200 Silicon NPN Power Transistor, highlighting its TO-3 package and high collector-base breakdown voltage of 250V. It lists maximum ratings, thermal characteristics, and key parameters relevant for applications such as TV horizontal output. Additionally, it includes pin configurations and a package outline for reference.

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José
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7 views3 pages

3DD200

The document provides the product specification for the 3DD200 Silicon NPN Power Transistor, highlighting its TO-3 package and high collector-base breakdown voltage of 250V. It lists maximum ratings, thermal characteristics, and key parameters relevant for applications such as TV horizontal output. Additionally, it includes pin configurations and a package outline for reference.

Uploaded by

José
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com 3DD200

DESCRIPTION
With TO-3 package
High collector-base breakdown voltage
: VCBO=250V

APPLICATIONS
For TV horizontal output applications

PINNING(see Fig.2)

PIN DESCRIPTION

1 Base

2 Emitter
Fig.1 simplified outline (TO-3) and symbol
3 Collector

Absolute maximum ratings(Ta= )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 250 V

VCEO Collector-emitter voltage Open base 100 V

VEBO Emitter-base voltage Open collector 6 V

IC Collector current 3 A

PC Collector power dissipation TC=75 30 W

Tj Junction temperature 150

Tstg Storage temperature -55~150

THERMAL CHARACTERISTICS
SYMBOL CHARACTERISTICS MAX UNIT

R jc Thermal resistance junction to case 1.5 /W


Inchange Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
3DD200

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 100 V

V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 250 V

V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V

VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 1.5 V

VBEsat Base-emitter saturation voltage IC=3A; IB=0.3A 1.5 V

ICBO Collector cut-off current VCB=250V; IE=0 0.5 mA

IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA

hFE DC current gain IC=2A ; VCE=5V 30 120

tf Fall time IC=3A; IB1=0.2A; IB2=-0.3A 1 s

2
Inchange Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
3DD200

PACKAGE OUTLINE

T O R
导体 D UC
半 N
固电 EM IC O
E S
H A NG
IN C
Fig.2 outline dimensions (unindicated tolerance: 0.1mm)

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