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Power Transistor Specs for Engineers

This document provides product specifications for the 2SD1351 silicon NPN power transistor from Inchange Semiconductor. It is a TO-220C packaged transistor intended for general purpose applications. Key specifications include an absolute maximum collector-emitter voltage of 60V, collector current of 3A, and DC current gain ranging from 60 to 300 depending on collector current and voltage conditions. Switching times are also specified, including a turn-on time of 0.65 microseconds.

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125 views3 pages

Power Transistor Specs for Engineers

This document provides product specifications for the 2SD1351 silicon NPN power transistor from Inchange Semiconductor. It is a TO-220C packaged transistor intended for general purpose applications. Key specifications include an absolute maximum collector-emitter voltage of 60V, collector current of 3A, and DC current gain ranging from 60 to 300 depending on collector current and voltage conditions. Switching times are also specified, including a turn-on time of 0.65 microseconds.

Uploaded by

masakp
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1351

DESCRIPTION ·
·With TO-220C package
·Complement to type 2SB988
·Low collector saturation voltage

APPLICATIONS
·For general purpose application

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base

3 Emitter

Absolute maximum ratings (Ta=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 60 V

VCEO Collector-emitter voltage Open base 60 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current 3 A

IB Base current 0.5 A

Ta=25℃ 2
PC Collector dissipation W
TC=25℃ 30

Tj Junction temperature 150 ℃

Tstg Storage temperature -50~150 ℃


Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1351

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 60 V

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 0.25 1.0 V

VBE Base-emitter on voltage IC=0.5A ; VCE=5V 0.7 1.0 V

ICBO Collector cut-off current VCB=60V; IE=0 0.1 mA

IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA

hFE DC current gain IC=0.5A ; VCE=5V 60 300

Cob Output capacitance IE=0; VCB=10V,f=1MHz 35 pF

fT Transition frequency IC=0.5A ; VCE=5V 3.0 MHz

Switching times

ton Turn-on time 0.65 μs


IB1=-IB2=0.2A
tstg Storage time VCC=30V;RL=15Ω 1.30 μs
Duty cycle≤1%

tf Fall time 0.65 μs

‹ hFE Classifications

O Y GR

60-120 100-200 150-300

2
Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1351

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)

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