DRV8808
DRV8808
DESCRIPTION
The DRV8808 provides the integrated motor driver solution for printers. The chip has three full H-bridges and
three buck DC-DC converters.
The output driver block for each consists of N-channel power MOSFETs configured as full H-bridges to drive the
motor windings. The device can be configured to utilize internal or external current sense for winding current
control.
The SPI input pins are 3.3-V compatible and have 5-V-tolerant inputs.
The DRV8808 has three dc-dc switch-mode buck converters to generate a programmable output voltage from
1 V up to 90% of VM, with up to 1.35-A load current capability.
The device is configured using the CSELECT terminal at start up, and serial interface during run time.
An internal shutdown function is provided for overcurrent protection, short-circuit protection, undervoltage lockout,
and thermal shutdown. Also, the device has the reset function at power on, and the input on nReset pin.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2 PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date. Copyright © 2009–2011, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
DRV8808
SLVS857A – DECEMBER 2009 – REVISED AUGUST 2011 www.ti.com
BLOCK DIAGRAM
VM
Cstorage 0.1 µF
VM
Cbkt
0.1 µF
A_CONT CSELECT Th_out VCP CP2 CP1
Temperature
VM
Sensor: To High-Side
OD_A Pre-TSD or Voltage Gate Drive
Tsens (Analog) A+
Charge
Vout1 Pump
DC-DC
Converter Motor Drive VM
Thermal Output DC
Ch-A Motor
Shut Down Control A
FB_A A–
RSA Optional
VM
OD_B
B+
Vout2
DC-DC
Converter
Motor Drive VM DC
Ch-B
VM Output Motor
Control B
FB_B B–
Regulator
Voltage Internal
Supervisory Supply Optional
Predrive, RSB
OD_C Latch Registers, VM
and
Vout3
DC-DC Control C+
Converter Circuitry
Ch-C
Motor Drive VM DC
Output Motor
FB_C
Control C
nReset C–
nORT
Optional
RSC
LOGIC_OUT
LDO IN
LDO OUT LDO
Regulator
LDO FB
nSLEEP
nWAKEUP
Serial Interface
GND V3p3
0.1 µF
DCA PACKAGE
(TOP VIEW)
OD_A 1 48 FB_A
OD_C 2 47 GND
GND 3 46 COA
FB_C 4 45 CP2
CSELECT 5 44 VCP
TH_OUT 6 43 VM
LOGIC_OUT 7 42 C–
nORT 8 41 RSC/GND
ENABLE_A/STROBE 9 40 RSC/GND
PHASE_A/CLK 10 39 C+
ENABLE_B 11 38 VM
PHASE_B 12 37 VM
ENABLE_C 13 36 B–
PHASE_C/DATA 14 35 RSB/GND
A_CONT 15 34 RSB/GND
NC 16 33 B+
V3P3 17 32 VM
nSLEEP 18 31 A+
nRESET 19 30 RSA/GND
nWAKEUP 20 29 RSA/GND
VLDO_OUT 21 28 A–
VLDO_FB 22 27 VM
VLDO_IN 23 26 GND
FB_B 24 25 OD_B
TERMINAL FUNCTIONS
TERMINAL SHUNT
I/O PU/PD DESCRIPTION
NO. NAME R
1 OD_A O Output for DC-DC switch mode regulator A
2 OD_C O Output for DC-DC switch mode regulator C
3 GND - Ground
4 FB_C I Feedback signal for DC-DC converter C
5 CSELECT I Up 200k DC-DC converter startup selector
6 TH_OUT O Temperature warning output (open drain)
7 LOGIC_OUT O Information monitoring output (open drain)
8 nORT O Reset output (open drain)
9 ENA / STB I Down 100k Enable input for DC motor A control / SPI STROBE
10 PHA / CLK I Down 100k Phase input for DC motor A control / SPI CLOCK
11 ENB I Down 100k Enable input for DC motor B control
12 PHB I Down 100k Phase input for DC motor B control
13 ENC I Down 100k Enable input for DC motor C control
14 PHC / DATA I Down 100k Phase input for DC motor C control / SPI DATA
15 A_CONT I Down 100k DC-DC A converter control (L = Enable)
16 NC NC Do not connect
17 V3p3 O Bypass for internal 3.3-V regulator
18 nSLEEP I Down 100k Enable/disable, SPI selector
19 nReset I Up 200k Reset input (L: reset, H/open: normal operation)
20 nWAKEUP I Up 200k Wake-up pin for DeepSleep mode (L = WAKEUP)
21 VLDO_OUT O LDO voltage regulator output
Internal
3.3-V
Supply
200 kW
(±40%)
1) Pin open, 3 V to 3.3 V
A /OFF, B /ON, C /ON
2) External R to GND (200 kW ± 10%)
# CSELECT 1.3 V to 2 V Soft-Start
A /OFF, B /ON, C /OFF Control
3) GND, 0 V to 0.3 V
A /OFF, B /OFF, C /OFF
GND
# Enable_X
# Phase _X
Hysteresis Serial Interface
# nSLEEP
# A_CONT 100 kW
(±30%)
GND GND
Internal
3.3-V
Supply
200 kW
(±40%)
# nWAKEUP Hysteresis
Reset Control
# nReset Deglitch
External
3.3-V
Supply
1 kW
# TH_OUT (External)
# LOGIC_OUT
# nORT
GND
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The negative spike less than –5 V and narrower than 50-ns width should not cause any problem.
(3) May shut down due to regulator OCP.
ELECTRICAL CHARACTERISTICS
TJ = 0°C to 135°C, VM = 7 V to 38 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Supply (Sleep) Current
ISLEEP1 Supply (sleep) current 1 nSLEEP = L, dc-dc all off 3 5.5 mA
ISLEEP2 Supply (sleep) current 2 nSLEEP = L, VM = 8 V, 6 8 mA
Regulators enabled No load
ISLEEP3 Supply (sleep) current 3 nSLEEP = L, VM = 38 V, 6 8 mA
Regulators enabled No load
IDEEP_SL Supply (deep sleep) current (1) VM = 38 V 0.7 1 mA
Digital Interface Circuit
VIH Digital high-level input voltage Digital inputs 2 3.6 V
IIH Digital high-level input current Digital inputs 100 μA
VIL Digital low-level input voltage Digital inputs 0.8 V
IIL Digital low-level input current Digital inputs 100 μA
Vhys Digital input hysteresis Digital inputs 0.45 V
Tdeg_nReset nReset input deglitch time 2.5 7.5 μs
Tfilt_ACONT A_CONT filter time (2) 30 70 μs
Charge-pump VCP (CP = 0.1 μF to 0.47 μF, Cblk = 0.01 μF ±20%)
VO(CP) Output voltage ILOAD = 0 mA, VM > 15 V VM + 10 VM + 13 V
f(CP) Switching frequency 1.6 MHz
(1) Deep Sleep shuts down majority of the device and runs minimal circuits (internal bias circuits and the nWAKEUP pin). Deep Sleep is
entered by writing 1 to Setup Register, Bank 1, Bit 11. Device is restarted by pulling nWAKEUP pin low or power cycling VM. Deep
Sleep functionality only available for VM > VthVM+.
(2) A_CONT is filtered for both high and low levels.
6 Copyright © 2009–2011, Texas Instruments Incorporated
DRV8808
www.ti.com SLVS857A – DECEMBER 2009 – REVISED AUGUST 2011
(7) RDSON at T = 135°C guaranteed by characterization. Production test will be done at T = 25°C/70°C.
(8) VM must be VM > VthVM+ to start up internal dc-dc converter.
(9) When VM goes down below VthVM+, the VUVPx (undervoltage protection in dc-dc) are masked. The dc-dc converter is shut off by nORT
assertion at VthVM –.
(10) No nORT assertion to VthVM2 detection.
(11) TSD does not need thermal hysteresis.
(12) Parametric guaranteed by characterization. Not tested in production.
(13) PreTSD does not need thermal hysteresis.
(14) Production test only measures Vol and Iol to ensure timing.
(15) tr and tf dominated by external capacitance, pullup resistance, and open-drain NMOS RDSON.
(16) This includes asynchronous timing deviation between the event to the timer clock.
(17) nORT assertion delay is configurable and defined in the serial register section.
(18) When the overcurrent is detected, all the H-bridges are shut down and assert nORT per shutdown configuration.
(19) tCOD, Pminp, and Pmine not production tested.
(20) 3 to 4 periods Fosc/4 + 1 Fosc
(21) 2 to 3 periods Fosc/4 + 1 Fosc
(22) 4 to 5 periods Fosc/4 + 1 Fosc
(23) 5 to 6 periods Fosc/4 + 1 Fosc
(24) 3 Fosc/8 (can add up to 1 additional Fosc/8 + 1.5 Fosc at phase or enable change due to asynchronous ambiguity)
(25) 2 Fosc/8 (can add up to 1 additional Fosc/8 + 1.5 Fosc at phase or enable change due to asynchronous ambiguity)
(26) 4 Fosc/8 (can add up to 1 additional Fosc/8 + 1.5 Fosc at phase or enable change due to asynchronous ambiguity)
(27) 5 Fosc/8 (can add up to 1 additional Fosc/8 + 1.5 Fosc at phase or enable change due to asynchronous ambiguity)
Copyright © 2009–2011, Texas Instruments Incorporated 9
DRV8808
SLVS857A – DECEMBER 2009 – REVISED AUGUST 2011 www.ti.com
Serial Interface
The device has a serial interface port (SIP) circuit block to control dc motor H-bridges, dc-dc regulators, and
other functions, such as blanking time, OFF time, etc. Since the SIP shares its three lines with three of the motor
control signals, the SIP is only available when nSLEEP is low.
Sixteen-bit serial data is shifted least significant bit (LSB) first into the serial data input (DATA) shift register on
the falling edge of the serial clock (CLK). After 16-bit data transfer, the strobe signal (Strobe) rising edge latches
all the shifted data. During the data transferring, Strobe voltage level is ok with L level or H level.
DATA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
CLK
Strobe
NOTE
During startup (VM rising), nSLEEP input is set HI, suppressing false data latching caused
by a rising edge on the STB signal. nSLEEP will remain HI until nORT is released (120 ms
after dc-dc regulators come up).
tsu th
Clock
tcs
twl(clk) twh(clk)
Strobe
tw(STRB)
tss_min
nSLEEP Don’t Care (see Note A)
tsu th
Clock
tcs
twl(clk) twh(clk)
Strobe
tw(STRB)
tss_min
nSLEEP Don’t Care (see Note A)
A. For initial setup, nSleep state can be "Don't care" before the tss_min timing prior to the strobe.
SETUP REGISTER
nSLEEP
EXTENDED SETUP REGISTER
ENABLEA /
STROBE When STROBE goes HI
SDATA
DATA SHIFT REGISTER
A. It is recommended that after initial power up sequence, a serial command be performed to clear undefined data in the
internal shift register. This will help avoid latching undefined data into SETUP and EXTENDED SETUP registers.
SETUP and EXTENDED SETUP registers are properly initialized during power up, but internal shift register is not
initialized.
VM
nPUC
(internal)
nORT
nSLEEP_ext
nSLEEP_int
[internal only]
(1) The LDO default follows the DC/DC B default value based on CSELECT.
(2) All bits go to default for VM < VthVM, nReset = L.
(3) RESET DELAY CONTROL set to 1 delays nORT assertion by 100 us typical. Range is 85 us to 125 us.
Table 6. Logic_Out
SIGNAL SELECT FUNCTION (Logic_out OUTPUT)
0000 Detect OCP/UVP/OVP on A, output L
0001 Detect OCP/UVP/OVP on B, output L
0010 Detect OCP/UVP/OVP on C, output L
0011 Detect OCP on DC-DC/LDO regulator, output L
0100 Detect UVP, output L
0101 Detect OVP, output L
0110 Detect OCP on motor, output L
0111 Detect TSD, output L
1000 Revision code bit 0
1001 Revision code bit 1
1010 Revision code bit 2
1011 Device code bit 0
1100 Device code bit 1
1101 N/A
1110 Detect OCP/UVP/OVP on LDO regulator, output L
1111 Fix, output H
Normal
DEEP SLEEP Bit (SETUP
REGISTER) = 0 Operation /
Idle State
nWAKEUP = LO
DEEP SLEEP Bit (SETUP
REGISTER) = 1
DC Motor Drive
H-bridges A, B, and C can be controlled by using the ENABLE_X and PHASE_X control lines.
The H-bridge driver operation is available for VM > 15 V.
Internal current sense functionality is present by default. External sensing can be enabled through the serial
interface. If enabled, the sense resistor must be placed externally.
NOTE
A capacitor, not larger than 2200 pF, can be placed between each H-bridge output to
GND for EMI suppression purposes. It will increase the peak current but will have no
impact on the operation.
tPDON
Sink or Source Gate
OFF to ON
tPDOFF tCOD
The dc motor H-bridges include a tBLANK period to ignore huge current spike due to rush current to varistor
capacitance.
Charge Pump
The charge-pump voltage generator circuit utilizes, external storage, and bucket capacitors. It provides the
necessary voltage to drive the high-side switches, for both dc-dc regulators and motor driver. The charge-pump
circuit is driven at a frequency of 1.6 MHz (nom). Recommended bucket capacitance (connected from CP1 to
CP2) is 10 nF, rated at 55 V (minimum), and storage capacitance is 0.1 μF, at 16 V (minimum). The
charge-pump storage capacitor, Cstorage, should be connected from the CP output to VM.
For power save in sleep mode, the charge pump is stopped when N_SLEEP = L and all three regulators are
turned OFF. When the part is powered up, the charge pump is started first after the CSELECT capture and, 10
ms later from the CP startup, the first regulator is started up.
(1) (2)
Table 8. Charge Pump
FAULT CONDITION DC-DC Ch-A DC-DC Ch-B DC-DC Ch-C nSleep CHARGE PUMP
X OFF OFF OFF 0 OFF
X ON X X X ON
X X ON X X ON
X X X ON X ON
0 X X X 1 ON
Motor OCP X X X 1 ON
TSD OFF OFF OFF X OFF
VM
Charge
Pump
Overcurrent
A_CONT Sense
(Regulator A Only)
OD_x
Control Logic
and
Vref Predriver
1V
Current Limit
Output
Voltage FBx
Supervisor
Overcurrent Protect
Disable Detect Disable
(Mask)
UVP OVP
(–30%) (+30%)
Setup/Extended Setup
Register
This is a switch-mode regulator with integrated switches, to provide a programmed output set by the feedback
terminal. The dc-dc converter has a variable duty cycle topology. External filtering (inductor and capacitor) and
external catch diode are required. The output voltage is short circuit protected.
The regulator has a soft-start function to limit the rush current during start-up. It is achieved by using VFB ramp
during soft start.
For unused dc-dc converter channels, the external components can be removed if the channel is set to inactive
by the CSELECT pin and register bits. Recommend connecting unused FB pin to GND or V3p3 (pin 17).
3.3V
LDO_IN
NC LDO_OUT
LDO Regulator
LDO_FB
FB_B
For proper termination, it is recommended that, if left unused, the LDO terminals be connected in the following
fashion:
1. LDO IN must be powered by an input voltage greater than 1 V.
2. LDO OUT must be left disconnected.
LDO Feed Back must be connected to the DC/DC Converter Channel B Feed Back terminal.
(1) (2) (3)
Table 9. CSELECT for Start-Up
CSELECT PIN VOLTAGE DCDC_A DCDC_B DCDC_C
Gnd 0 V to 0.3 V OFF OFF OFF
Pull down (by external 200 kΩ) 1.3 V to 2.0 V OFF ON OFF
OPEN 3.0 V to 3.3 V OFF ON ON
(1) The CSELECT pin is connected to internal 3.3-V supply through 200-kΩ resister.
(2) This CSELECT pin control is valid after the PowerON Reset is initiated. Once the Setup Register is set, the dc-dc control follows the bits
7 to 9 on the Setup Register, bank 0, until the next PowerON Reset event occurred.
(3) For OPEN case, B starts up 1st and C follows after 10-ms delay.
VM VthVM+
(CSELECT = Open) (VM = 6 V) Capture CSELECT
VthVM– Then Start Charge Pump
(VM = 5 V)
VCP
DCDC_B 10 ms
(Note A)
DCDC_C
120 ms
DLY
(10 ms)
nORT
L
H
Protection Mask
(UVP, OVP)
VM VthVM+
(CSELECT = 200k to GND) (VM = 6 V) Capture CSELECT
VthVM– Then Start Charge Pump
(VM = 5 V)
DCDC_B 10 ms
(3.3 V to LDO_IN) (Note A)
LDO
(1.2 V)
120 ms
(20 ms + 100 ms)
nORT L
H
Protection Mask
(OVP, UVP for Ch-A/B/C and LDO)
VM VthVM+
(CSELECT = Open) (VM = 6 V) Capture CSELECT
VthVM– Then Start Charge Pump
(VM = 5 V)
10 ms
DCDC_B (Note A)
40 ms
DCDC_C
(3.3 V to LDO_IN)
LDO
(1.2 V)
120 ms
(20 ms + 100 ms)
nORT
L
Protection Mask
(OVP, UVP for Ch-A/B/C and LDO) H
VM VthVM+
(CSELECT = GND) (VM = 6 V)
VthVM–
(VM = 5 V)
300 ms
DCDC_B
(Off)
DCDC_C
(Off)
nORT L
Protection Mask H
(UVP, OVP)
A. When VM crosses the VthVM+ (about 6 V) with CSELECT = GND, none of three regulators are turned ON. The nORT
output is released to H after 300 ms from VthVM+ crossing.
B. LDO OCP is masked during protection mask time.
Figure 13. Power-up Timing (Power up Without DC-DC Turn on, CSELECT = GND)
VM
(CSELECT = GND)
VthVM+
VM = 6 V
VCP VM + 11 V
VM – 0.7 V
DCDC_A
(Off®On)
Note B
DCDC_B
(Off)
DCDC_C
(Off)
120 ms
(Note A)
nORT H
Protection Mask
L
A. The regulator is started from the strobe input, same as the charge pump. No 10-ms waiting, because the VCP pin
already reached to VM – 0.7 V.
B. LDO OCP is masked during protection mask time.
C. A_CONT must be LOW or OPEN for regulator A to turn on.
VM
(CSELECT = GND)
VthVM+
VM = 6 V
DCDC_B
(Off)
10 ms
DCDC_C
(Off)
10 ms
DCDC_A
(Off®On)
Note A 120 ms
nORT H
Protection Mask
(UVP, OVP) L
Figure 15. Power-up Timing (DC-DC Regulator Wakeup by Setup Register, All Three Channels ON)
VM
(CSELECT = Open) VM = 6 V VthVM+
VM = 5 V
VthVM–
DCDC_B
10 ms
(Note A)
DCDC_C
120 ms
10 ms
nORT
Protection Mask
(UVP, OVP)
Figure 16.
VM VthVM+
(CSELECT = Open) VM = 6 V
VM = 5 V
VthVM–
Restart
Shut Down
10 ms 10 ms
DCDC_B (Note A) (Note A)
DCDC_C
120 ms
10 ms t 10 ms
(in Case
t < 120 ms)
nORT
L
Protection Mask H
(UVP, OVP)
Figure 17.
VthVM+
VM VM = 6 V
VthVM–
VM = 5 V Mask
Shut Down
DCDC_B
DCDC_C
nORT
Protection Mask
(UVP, OVP) Masks UVP, OVP on All DC-DC.
Masks UVP, OVP, and OCP on LDO.
Figure 18.
VthVM+
VM = 6 V
VM
VthVM–
VM = 5 V Mask
DCDC_B
DCDC_C
nORT
Figure 19.
VthVM+ VthVM+
VM VM = 6 V
(CSELECT = Open) VthVM–
Restart
Shut Down
10 ms
DCDC_B (Note A)
10 ms
DCDC_C
nORT
Protection Mask
(UVP, OVP)
Figure 20.
nReset
nORT
See Note A
A. 2.5 μs < (nReset Deglitch + Output Delay) < 10 μs
Phase
tBlank (1,0)
(see Note B)
5 µs 5 µs 5 µs <5 µs 5 µs
A. Setup register bit <1:0> = (1,0), tBlank = 5 μs (or bits <3:2>/<5:4> for H-bridge B/C channel)
B. Setup register bit <1:0> = (0,1), tBlank = 2.5 μs (or bits <3:2>/<5:4> for H-bridge B/C channel)
Phase
tBlank (1,0)
(see Note B) 5 µs 5 µs 5 µs 5 µs
<5 µs
A. Setup register bit <1:0> = (1,0), tBlank = 5 μs (or bits <3:2>/<5:4> for H-bridge B/C channel)
B. Setup register bit <1:0> = (0,1), tBlank = 2.5 μs (or bits <3:2>/<5:4> for H-bridge B/C channel)
Table 11.
DEVICE STATUS CHARGE PUMP OSCM nORT MODE SETTING
nSleep Active Active Inactive Available
nORT Inactive Active Active Depend on power down
VM < 6 V during power down Active Active See timing chart Depend on power down
4.5 V < VM Inactive Inactive Active Unavailable
www.ti.com 22-Feb-2010
PACKAGING INFORMATION
Orderable Device Status (1) Package Package Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Type Drawing Qty
DRV8808DCA ACTIVE HTSSOP DCA 48 40 TBD Call TI Call TI
DRV8808DCAR ACTIVE HTSSOP DCA 48 2000 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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