BUF654

Silicon NPN High Voltage Switching Transistor

Features
D Simple-sWitch-Off Transistor (SWOT)
D HIGH SPEED technology
D Planar passivation
D 100 kHz switching rate
D Very low switching losses
D Very low dynamic saturation
D Very low operating temperature
D Optimized RBSOA
D
14283
High reverse voltage

Applications
Electronic lamp ballast circuits
Switch-mode power supplies

Absolute Maximum Ratings

Tcase = 25°C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Collector-emitter voltage
g VCEO 400 V
VCEW 500 V
VCES 700 V
Emitter-base voltage VEBO 9 V
Collector current IC 12 A
Collector peak current ICM 18 A
Base current IB 6 A
Base peak current IBM 9 A
Total power dissipation Tcase ≤ 25°C Ptot 80 W
Junction temperature Tj 150 °C
Storage temperature range Tstg –65 to +150 °C

Maximum Thermal Resistance

Tcase = 25°C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Junction case RthJC 1.56 K/W

TELEFUNKEN Semiconductors 1 (9)

Rev. D2, 18-Jul-97
 BUF654
Electrical Characteristics
Tcase = 25°C, unless otherwise specified
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 700 V ICES 50 mA
VCE = 700 V; Tcase = 150°C ICES 0.5 mA
Collector-emitter breakdown IC = 500 mA; L = 125 mH; V(BR)CEO 400 V
voltage (figure 1) Imeasure = 100 mA
Emitter-base breakdown voltage IE = 1 mA V(BR)EBO 9 V
Collector-emitter saturation IC = 2 A; IB = 0.5 A VCEsat 0.1 0.2 V
voltage IC = 6 A; IB = 2 A VCEsat 0.2 0.4 V
Base-emitter saturation voltage
g IC = 2 A; IB = 0.5 A VBEsat 0.9 1 V
IC = 6 A; IB = 2 A VBEsat 1 1.2 V
DC forward current transfer ratio VCE = 2 V; IC = 10 mA hFE 15
VCE = 2 V; IC = 2 A hFE 15
VCE = 2 V; IC = 6 A hFE 7
VCE = 5 V; IC = 12 A hFE 4
Collector-emitter working VS = 50 V; L = 1 mH; VCEW 500 V
voltage Tcase = 125°C;
IC = 5 A; IB1 = 1 A;
–IB2 = 2.5 A; –VBB = 5 V
Dynamic
y saturation voltage
g IC = 6 A; IB = 2 A; t = 1 ms VCEsatdyn 7.5 15 V
IC = 6 A; IB = 2 A; t = 3 ms VCEsatdyn 1.5 4 V
Gain bandwidth product IC = 500 mA; VCE = 10 V; fT 8 MHz
f = 1 MHz

2 (9) TELEFUNKEN Semiconductors

Rev. D2, 18-Jul-97
 BUF654
Switching Characteristics
Tcase = 25°C, unless otherwise specified
Parameter Test Conditions Symbol Min Typ Max Unit
Resistive load (figure 2)
Turn on time IC = 2 A;; IB1 = 0.5 A;–I
; B2 = 1 A;; ton 0.15 0.25 ms
Storage time VS = 250 V ts 2.2 3 ms
Fall time tf 0.3 0.4 ms
Turn on time IC = 5 A;; IB1 = 1 A;–I
; B2 = 2.5 A;; ton 0.3 ms
Storage time VS = 250 V ts 1.3 ms
Fall time tf 0.12 ms
Turn on time IC = 6 A;; IB1 = 1.2 A;; –IB2 = 3 A;; ton 0.5 0.7 ms
Storage time VS = 250 V ts 1.2 1.5 ms
Fall time tf 0.1 0.15 ms
Inductive load (figure 3)
Storage time Vclamp = 300 V;; L = 200 mH;; –VBE = 5 V;; ts 2.3 3 ms
Fall time IC = 2 A; IB1 = 0.5 A; –IB2 = 1 A tf 0.1 0.2 ms
Storage time Vclamp = 300 V;; L = 200 mH;; –VBE = 5 V;; ts 1.5 2 ms
Fall time IC = 5 A; IB1 = 1 A; –IB2 = 2.5 A tf 0.1 0.18 ms
Storage time Vclamp = 300 V;; L = 200 mH;; –VBE = 5 V;; ts 1.1 1.5 ms
Fall time IC = 6 A; IB1 = 1.2 A; –IB2 = 3 A tf 0.05 0.1 ms

94 8863

IC
V S2 + 10 V Imeasure
IB w IC
5
IC LC

V S1 + +
0 to 30 V VCE
V(BR)CEO
3 Pulses V(BR)CEO
I(BR)R
tp
+ 0.1 100 mW

+ 10 ms
T
tp

Figure 1. Test circuit for V(BR)CE0

TELEFUNKEN Semiconductors 3 (9)

Rev. D2, 18-Jul-97
BUF654

94 8852

IB
IB1

0
t

RC –IB2
IC
(1)
IC
IB1 VCE VCC
IB 0.9 IC

RB

VBB + 0.1 IC
tr t
td ts tf
ton toff
(1) Fast electronic switch
Figure 2. Test circuit for switching characteristics – resistive load

94 8853
IB
IB1

LC 0
t

–IB2
IC (2)
(1)
IC
IB1 VCE
IB Vclamp VCC 0.9 IC
RB

VBB + 0.1 IC
t
(1) Fast electronic switch ts tr
(2) Fast recovery rectifier
Figure 3. Test circuit for switching characteristics – inductive load

4 (9) TELEFUNKEN Semiconductors

Rev. D2, 18-Jul-97
 BUF654
Typical Characteristics (Tcase = 25_C unless otherwise specified)
14 100

P tot – Total Power Dissipation ( W )

1.56 K/W
12
IC – Collector Current ( A )

10
12.5 K/W
10

8 1
0.1 x IC < IB2 < 0.5 x IC
6 25 K/W
VCEsat < 2 V
0.1
50 K/W
4
0.01 RthJA = 85 K/W
2

0 0.001
0 100 200 300 400 500 600 0 25 50 75 100 125 150
95 10572 VCE – Collector Emitter Voltage ( V ) 95 10509 Tcase ( °C )

Figure 4. VCEW – Diagram Figure 7. Ptot vs.Tcase

10 - Collector Emitter Saturation Voltage (V) 10

Tj = 25°C IB = 1A

8
I - Collector Current (V)

600 mA IC = 0.5A 2A 5A 8A
1
6
400 mA

4
200 mA
0.1
100 mA
C

2
50 mA
CEsat

Tj = 25°C
0 0.01
0 2 4 6 8 10 0.01 0.1 1 10
V

95 9747 VCE - Collector Emitter Voltage (V) 95 9746 IB - Base Current (A)

Figure 5. IC vs. VCE Figure 8. VCEsat vs. IB

100 100
- Forward DC Current Transfer Ratio

- Forward DC Current Transfer Ratio

Tj = 125°C
Tj = 25°C

VCE = 10V Tj = –25°C

VCE = 5V
10 10
VCE = 2V
FE

Tj = 25°C
FE
h

1
h

1
0.01 0.1 1 10 100 0.01 0.1 1 10 100
94 9217 IC – Collector Current (A) 94 9206 IC – Collector Current (A)

Figure 6. hFE vs. IC Figure 9. hFE vs. IC

TELEFUNKEN Semiconductors 5 (9)

Rev. D2, 18-Jul-97
BUF654
10 1.0
saturated switching saturated switching
R-load R-load
8 0.8
IC = 2A, IB1 = 0.4A IC = 2A, IB1 = 0.4A
ts - Storage Time ( m s)

t f - Fall Time ( m s)
6 0.6
Tj = 125°C
Tj = 125°C
4 0.4

Tj = 25°C
2 0.2
Tj = 25°C

0 0
0 1 2 3 4 0 1 2 3 4
95 9749 –IB2 / IB1 95 9762 –IB2 / IB1

Figure 10. ts vs. –IB2/IB1 Figure 13. tf vs. –IB2/IB1

5 0.5
saturated switching
L-load
4 0.4 IC = 2A, IB1 = 0.4A
t s - Storage Time ( m s)

Tj = 125°C
t f - Fall Time ( m s)

Tj = 125°C
3 0.3
Tj = 25°C

2 0.2
saturated switching Tj = 25°C
L-load
1 0.1
IC = 2A, IB1 = 0.4A

0 0
0 1 2 3 4 0 1 2 3 4
95 9748 –IB2 / IB1 95 9761 –IB2 / IB1

Figure 11. ts vs. –IB2/IB1 Figure 14. tf vs. –IB2/IB1

10 1.0
Tj = 125°C
saturated switching saturated switching
R-load R-load
8 0.8
Tj = 125°C IC = 5A, IB1 = 1A IC = 5A, IB1 = 1A
ts - Storage Time ( m s)

t f - Fall Time ( m s)

6 0.6

4 0.4

Tj = 25°C
2 0.2
Tj = 25°C

0 0
0 1 2 3 4 0 1 2 3 4
95 9760 –IB2 / IB1 95 9764 –IB2 / IB1

Figure 12. ts vs. –IB2/IB1 Figure 15. tf vs. –IB2/IB1

6 (9) TELEFUNKEN Semiconductors

Rev. D2, 18-Jul-97
 BUF654
10 1.0

unsaturated (Baker clamp) unsaturated (Baker clamp)

R-load R-load
8 0.8
IC = 5A, IB1 = 1A IC = 5A, IB1 = 1A
ts - Storage Time ( m s)

t f - Fall Time ( m s)
6 0.6
Tj = 125°C

4 0.4
Tj = 125°C

2 0.2
Tj = 25°C
Tj = 25°C
0 0
0 1 2 3 4 0 1 2 3 4
95 9750 –IB2 / IB1 95 9763 –IB2 / IB1

Figure 16. ts vs. –IB2/IB1 Figure 17. tf vs. –IB2/IB1

TELEFUNKEN Semiconductors 7 (9)

Rev. D2, 18-Jul-97
BUF654

Dimensions in mm

14277

8 (9) TELEFUNKEN Semiconductors

Rev. D2, 18-Jul-97
 BUF654
Ozone Depleting Substances Policy Statement

It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs).

The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.

TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.

TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

TELEFUNKEN Semiconductors 9 (9)

Rev. D2, 18-Jul-97