DATA SHEET

SILICON POWER TRANSISTOR

2SC5664
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING

DESCRIPTION
The 2SC5664 is a power transistor featuring low-saturation voltage and high hFE. This transistor is ideal for high-
precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for
solenoid driving in automotive equipment.

ORDERING INFORMATION
PART NUMBER PACKAGE

2SC5664 Power SOP8

FEATURES
• Low VCE(sat): VCE(sat) ≤ 0.15 V (IC = 1.2 A, IB = 10 mA)
• High hFE: hFE = 300 to 1,200 (VCE = 2.0 V, IC = 1.0 A)
• On-chip dumper-diode
• On-chip zener-diode between C - B

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Parameter Symbol Conditions Ratings Unit

Collector to Base Voltage VCBO 115±15 V

Collector to Emitter Voltage VCER RBE = 2kΩ 115.6±15 V

Emitter to Base Voltage VEBO 6 V

Collector Current (DC) IC(DC) ±3 A

Collector Current (pulse) IC(pulse) PW ≤ 300 µs, Duty Cycle ≤ 10% ±6 A

Base Current (DC) IB(DC) 1.0 A

Total Power Dissipation PT TA = 25°C 2.0 W

When using ceramic board of
2
1200 mm ×1.0 mm

Junction Temperature Tj 150 °C

Storage Temperature Tstg −55 to +150 °C

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.

Document No. D17731EJ1V0DS00 (1st edition)

Date Published September 2005 NS CP(K)
Printed in Japan
2005
 2SC5664

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Collector Cut-off Current ICBO1 VCB = 80 V, IE = 0 50 µA

Collector Cut-off Current ICBO2 VCE = 80 V, IE = 0, Tj = 150°C 350 µA
Emitter Cut-off Current IEBO VEB = 6.0 V, IC = 0 50 µA
Collector to Emitter Voltage VCEO IC = 10 mA 100.6 V

Collector to Emitter Voltage VCER IC = 25 mA, RBE = 2 kΩ 100.6 115.6 130.6 V

Collector to Emitter Voltage VCER(SUS) IC = 1.2 A, IB = 10 mA, RBE = 2 kΩ, L = 1 mH 100.6 115.6 130.6 V
Note
DC Current Gain hFE1 VCE = 2.0 V, IC = 1.0 A 300 700 1200 −
Note
DC Current Gain hFE2 VCE = 2.0 V, IC = 2.0 A 120 −
Note
Collector Saturation Voltage VCE(sat)1 IC = 1.2 A, IB = 10 mA 0.08 0.15 V
Note
Collector Saturation Voltage VCE(sat)2 IC = 1.2 A, IB = 10 mA, Tj = 150°C 0.12 0.205 V
Note
Base Saturation Voltage VBE(sat) IC = 1.2 A, IB = 10 mA 0.8 1.3 V

Gain Bandwidth Product fT VCE = 5 V, IC = 1.0 A 100 MHz

Collector Capacitance Cob VCB = 10 V, IE = 0, f = 1.0 MHz 125 pF

Diode Forward Voltage VDF IDF = 1.2 A 1.5 V

Turn-on Time ton IC = 1.2 A 0.58 µs

IB1 = −IB2 = 10 mA, VCC = 12 V
Storage Time tstg 3.85 µs
RL = 8 Ω
Fall Time tf 0.28 µs

Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%

PACKAGE DRAWING (UNIT: mm)

8 5

1 : Base
2, 3, 4 : Emitter
5, 6, 7, 8 : Collector

6.0 ±0.3
1 4
4.4
1.44

5.37 MAX. 0.8

1.8 MAX.

+0.10
–0.05
0.15

0.5 ±0.2
0.05 MIN.

1.27 0.78 MAX. 0.10

+0.10
0.40 –0.05 0.12 M

EQUIVALENT CIRCUIT
C

2 Data Sheet D17731EJ1V0DS

 2SC5664

TYPICAL CHARACTERISTICS (TA = 25°C)

TOTAL POWER DISSIPATION vs. DERATING CURVE OF SAFE OPERATING AREA

CASE TEMPERATURE
1.8 120

dT - Percentage of Rated Power - %

PT - Total Power Dissipation - W

1.5 100

1.2 80 S/b Limited

0.9 60

Dissipation Limited
0.6 40

0.3 20

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150

TA - Ambient Temperature - °C TA - Ambient Temperature - °C

FORWARD BIAS SAFE OPERATING AREA COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE
10 6
PW

IC ( pulse)
PW

5
=
10

IC ( DC)
=
PW

0
1

µs
IC - Collector Current - A

IC - Collector Current - A
m
=

1 4
s
10
PW

IB = 5 mA
m
=

s
10

3 IB = 4 mA
0
m
s

0.1 2 IB = 3 mA

IB = 2 mA
TA = 25°C VCER = VCER = 1
Single pulse 100 V(M IN) 130 V(M A X) IB = 1 mA
0.01 0
1 10 100 1000 0 1 2 3 4 5 6
VCE - Collector to Emittor Voltage - V VCE - Collector to Emittor Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000
Rth - Transient Thermal Resistance - °C/W

100

62.5°C/W

10

Mounted on ceramic substrate of 1200 mm2 × 1.0 mm

0.1
100 µ 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s

Data Sheet D17731EJ1V0DS 3

 2SC5664

DC CURRENT GAIN vs. COLLECTOR SATURATION VOLTAGE vs.

COLLECTOR CURRENT COLLECTOR CURRENT
10000 10

VCE - Collector Saturation Voltage - V

TA = 125°C
1000 1
hFE - DC Current Gain

75°C
25°C
TA = 125°C −25°C
75°C −40°C
100 0.1
25°C
−25°C
−40°C V CE = 2 V IC/IB = 120
Single pulse Single pulse
10 0.01
0.01 0.1 1 10 0.01 0.1 1 10

IC - Collector Current - A IC - Collector Current - A

BASE SATURATION VOLTAGE vs. GAIN BANDWIDTH PRODUCT vs.

COLLECTOR CURRENT COLLECTOR CURRENT
10 1000
fT - Gain Bandwidth Product - MHz V CE = 2 V
VBE - Base Saturation Voltage - V

1 100

TA = 125°C
0.1 10
75°C
25°C
−25°C IC/IB = 120
−40°C Single pulse
0.01 1
0.01 0.1 1 10 0.01 0.1 1 10

IC - Collector Current - A IC - Collector Current - A

OUTPUT CAPACITANCE vs. STORAGE TIME, TURN ON TIME AND FALL TIME
tstg, ton tf - Storage Time, Turn-on Time and Fall Time - ns

COLLECTOR TO BASE VOLTAGE vs. COLLECTOR CURRENT

1000 10
Cob - Collector Capacitance - pF

tst g

1 ton

100 tf

0.1

IC = 120 · IB1= −120 · IB2

Single pulse
10 0.01
0.01 0.1 1 10 100 1000 0.1 1 10 100

VCB - Collector to Base Voltage - V IC - Collector Current - A

4 Data Sheet D17731EJ1V0DS

 2SC5664

SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT

Base current
waveform

Collector current
waveform

Data Sheet D17731EJ1V0DS 5

 2SC5664

• The information in this document is current as of September, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
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all products and/or types are available in every country. Please check with an NEC Electronics sales
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M8E 02. 11-1