DATA SHEET
SILICON POWER TRANSISTOR
2SA1742
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION
switching and features a high hFE at low VCE(sat). This transistor is ideal Part No. Package
for use as a driver in DC/DC converters and actuators. 2SA1742 Isolated TO-220
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting cost.
(Isolated TO-220)
FEATURES
• High hFE and low VCE(sat):
hFE ≥ 100 MIN. @VCE = −2.0 V, IC = −1.5 A
VCE(sat) ≥ −0.3 V MAX. @IC = −4.0 V, IB = −0.2 A
• Full-mold package that does not require an insulating board or
bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°°C)
Parameter Symbol Conditions Ratings Unit
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Collector to base voltage VCBO −100 V
Collector to emitter voltage VCEO −60 V
Emitter to base voltage VEBO −7.0 V
Collector current (DC) IC(DC) −7.0 A
Collector current (pulse) IC(pulse) PW ≤ 300 µs, −14 A
duty cycle ≤ 10%
Base current (DC) IB(DC) −3.5 A
Total power dissipation PT TC = 25°C 30 W
TA = 25°C 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14858EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
© 2002
Printed in Japan datasheet pdf - http://www.DataSheet4U.net/
2SA1742
ELECTRICAL CHARACTERISTICS (TA = 25°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector to emitter voltage VCEO(SUS) IC = −4.0 V, IB = −0.4 A, L = 1 mH −60 V
VCEX(SUS) IC = −4.0 A, IB1 = −IB2 = −0.4 A, −60 V
VBE(OFF) = 1.5 V, L = 180 µH, clamped
Collector cutoff current ICBO VCB = −60 V, IE = 0 A −10 µA
ICER VCE = −60 V, RBE = 50 Ω, TA = 125°C −1.0 mA
ICEX1 VCE = −60 V, VBE(OFF) = 1.5 V −10 µA
ICEX2 VCE = −60 V, VBE(OFF) = 1.5 V, −1.0 mA
TA = 125°C
Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 A −10 µA
DC current gain hFE1 VCE = −2.0 V, IC = −0.7 ANote 100
hFE2 VCE = −2.0 V, IC = −1.5 ANote 100 400
hFE3 VCE = −2.0 V, IC = −4.0 ANote 60
Collector saturation voltage VCE(sat)1 IC = −4.0 A, IB = −0.2 ANote −0.3 V
VCE(sat)2 IC = −6.0 A, IB = −0.3 ANote −0.5 V
Base saturation voltage VBE(sat)1 IC = −4.0 A, IB = −0.2 ANote −1.2 V
VBE(sat)2 IC = −6.0 A, IB = −0.3 ANote −1.5 V
Collector capacitance Cob VCB = −10 V, IE = 0 A, f = 1.0 MHz 180 pF
Gain bandwidth product fT VCB = −10 V, IC = −1.0 A 40 MHz
Turn-on time ton IC = −4.0 A, RL = 12.5 Ω, 0.3 µs
Storage time tstg IB1 = −IB2 = −0.2 A, VCC ≅ −50 V 1.5 µs
Refer to the test circuit. µs
Fall time tf 0.3
Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking M L K
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hFE2 100 to 200 150 to 300 200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
2 Data Sheet D14858EJ2V0DS
datasheet pdf - http://www.DataSheet4U.net/
2SA1742
TYPICAL CHARACTERISTICS (TA = 25°°C)
Total Power Dissipation PT (W)
Derating dT (%)
Case Temperature TC (°C) Case Temperature TC (°C)
Collector current IC (A)
Collector Current IC (A)
Collector Current IC (A)
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Collector to Emitter Voltage VCE (V)
Single pulse
Collector to Emitter Voltage VCE (V)
Transient Thermal Resistance rth(t) (°C/W)
Without heatsink
With infinite heatsink
Pulse Width PW (s)
Data Sheet D14858EJ2V0DS 3
datasheet pdf - http://www.DataSheet4U.net/
2SA1742
Collector Current IC (A) Pulse test
DC Current Gain hFE
Collector to Emitter Voltage VCE (V) Collector Current IC (A)
Collector Saturation Voltage VCE(sat) (V)
Base Saturation Voltage VBE(sat) (V)
Gain Bandwidth Product fT (MHz)
Pulse test
Collector Current IC (A) Collector Current IC (A)
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Collector Capacitance Cob (pF)
Turn-On Time ton (µs)
StorageTime tstg (µs)
Fall Time tf (µs)
Collector to Base Voltage VCB (V) Collector Current IC (A)
4 Data Sheet D14858EJ2V0DS
datasheet pdf - http://www.DataSheet4U.net/
2SA1742
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
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Data Sheet D14858EJ2V0DS 5
datasheet pdf - http://www.DataSheet4U.net/
2SA1742
• The information in this document is current as of July, 2001. The information is subject to change
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and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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M8E 00. 4
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