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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The document provides product specifications for the MJL21194 silicon NPN power transistor from SavantIC Semiconductor. Key details include: 1) It has a TO-3PL package and is designed for applications requiring high power audio output, disk head positioners, and linear applications. 2) Absolute maximum ratings include a collector-emitter voltage of 250V, collector current of 16A, and power dissipation of 200W. 3) Electrical characteristics include a collector-emitter breakdown voltage of 250V minimum, saturation voltage of 1.4V at 8A and 4V at 16A, and DC current gain of 25-75 at 8A and 8 at 16A.

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72 views3 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The document provides product specifications for the MJL21194 silicon NPN power transistor from SavantIC Semiconductor. Key details include: 1) It has a TO-3PL package and is designed for applications requiring high power audio output, disk head positioners, and linear applications. 2) Absolute maximum ratings include a collector-emitter voltage of 250V, collector current of 16A, and power dissipation of 200W. 3) Electrical characteristics include a collector-emitter breakdown voltage of 250V minimum, saturation voltage of 1.4V at 8A and 4V at 16A, and DC current gain of 25-75 at 8A and 8 at 16A.

Uploaded by

bajarlibroselectro
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors MJL21194

DESCRIPTION
www.datasheet4u.com
·With TO-3PL package
·Complement to type MJL21193
·Excellent gain linearity

APPLICATIONS
·Designed for high power audio output,disk
head positioners and linear applications

PINNING
PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
3 Emitter

ABSOLUTE MAXIMUM RATINGS(Tc=25 )


SYMBOL PARAMETER CONDITIONS MAX UNIT

VCBO Collector-base voltage Open emitter 400 V

VCEO Collector-emitter voltage Open base 250 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 16 A

ICM Collector current-peak 30 A

IB Base current 5 A

PD Total power dissipation TC=25 200 W

Tj Junction temperature -65~150

Tstg Storage temperature -65~150

THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT

Rth j-C Thermal resistance from junction to case 0.7 /W


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors MJL21194

CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=100mA ;IB=0 250 V

VCE(sat)-1 Collector-emitter saturation voltage IC=8A ;IB=0.8A 1.4 V

VCE(sat)-2 Collector-emitter saturation voltage IC=16A ;IB=3.2A 4.0 V

VBE(ON) Base-emitter on voltage IC=8A ; VCE=5V 2.2 V

ICEX Collector cut-off current VCE=250V; VBE(off)=1.5V 100 µA

ICEO Collector cut-off current VCE=200V; IB=0 100 µA

IEBO Emitter cut-off current VEB=5V; IC=0 100 µA

hFE-1 DC current gain IC=8A ; VCE=5V 25 75

hFE-2 DC current gain IC=16A ; VCE=5V 8

fT Transition frequency IC=1A ; VCE=10V,f=1MHz 4 MHz

COB Collector output capacitance f=1MHz;VCB=10V,IE=0 500 pF

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors MJL21194

PACKAGE OUTLINE

www.datasheet4u.com

Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)

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