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D1594 SavantIC

This document provides specifications for the SavantIC Semiconductor 2SD1594 silicon NPN power transistor. It is available in a TO-220Fa package and is intended for use in low frequency power amplifiers and high speed switching industrial applications. Key specifications include a maximum collector-emitter voltage of 100V, collector current of 7A, and saturation voltages of 0.6V and 1.5V for collector-emitter and base-emitter respectively. Switching times are also provided.

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289 views3 pages

D1594 SavantIC

This document provides specifications for the SavantIC Semiconductor 2SD1594 silicon NPN power transistor. It is available in a TO-220Fa package and is intended for use in low frequency power amplifiers and high speed switching industrial applications. Key specifications include a maximum collector-emitter voltage of 100V, collector current of 7A, and saturation voltages of 0.6V and 1.5V for collector-emitter and base-emitter respectively. Switching times are also provided.

Uploaded by

david
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SD1594

DESCRIPTION
·With TO-220Fa package
·Low collector saturation voltage

APPLICATIONS
·Low frequency power amplifier
·High speed switching industrial use

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-220Fa) and symbol
3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 150 V

VCEO Collector-emitter voltage Open base 100 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current (DC) 7 A

ICM Collector current-Peak 15 A

IB Base current (DC) 3.5 A

Ta=25 1.5
PC Collector power dissipation W
TC=25 40

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SD1594

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=5A , IB1=0.5A,L=1mH 60 V

VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A 0.6 V

VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V

ICBO Collector cut-off current VCB=100V ;IE=0 10 µA

IEBO Emitter cut-off current VEB=5V; IC=0 10 µA

hFE-1 DC current gain IC=0.5A ; VCE=5V 40

hFE-2 DC current gain IC=3A ; VCE=5V 40 240

hFE-3 DC current gain IC=5A ; VCE=5V 20

Switching times

ton Turn-on time 0.5 µs

IC=5A ;IB1=0.5A
ts Storage time IB2=-0.5A; VCC=50V 0.5 µs
RL=10@

tf Fall time 1.5 µs

hFE-2 Classifications
R O Y

40-80 70-140 120-240

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SD1594

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)

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