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Power Transistor Specs for Engineers

The document provides specifications for the SavantIC Semiconductor 2SC4237 silicon NPN power transistor. It details the transistor's pinning, maximum ratings, thermal characteristics, and electrical characteristics under various test conditions.

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Orlando H. Quintar
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66 views3 pages

Power Transistor Specs for Engineers

The document provides specifications for the SavantIC Semiconductor 2SC4237 silicon NPN power transistor. It details the transistor's pinning, maximum ratings, thermal characteristics, and electrical characteristics under various test conditions.

Uploaded by

Orlando H. Quintar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC4237

DESCRIPTION
·With TO-247 package
·Switching power transistor
·High breakdown voltage

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-247) and symbol
3 Emitter

Absolute maximum ratings(Tc=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 1200 V

VCEO Collector-emitter voltage Open base 800 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current (DC) 10 A

ICM Collector current-Peak 20 A

IB Base current 4 A

IBM Base current-Peak 8 A

PD Total power dissipation TC=25 150 W

Tj Junction temperature 150

Tstg Storage temperature -55~150

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-C Thermal resistance junction to case 0.83 /W


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC4237

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0 800 V

VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A 1.0 V

VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V

ICBO Collector cut-off current


At rated voltage 0.1 mA
ICEO Collector cut-off current

IEBO Emitter cut-off current At rated voltage 0.1 mA

hFE-1 DC current gain IC=5A ; VCE=5V 8

hFE-2 DC current gain IC=1mA ; VCE=5V 5

fT Transition frequency IC=1A ; VCE=10V 8 MHz

Switching times resistive load

ton Turn-on time 0.5 µs


IC=5A
ts Storage time IB1=1A; IB2=2A 3.5 µs
VBB2=4V ,RL=50B

tf Fall time 0.3 µs

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC4237

PACKAGE OUTLINE

Fig.2 Outline dimensions

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