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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The document provides product specifications for the 2N5157 silicon NPN power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3 package and pinning, absolute maximum ratings for voltage and current, thermal characteristics, and electrical characteristics such as collector-emitter saturation voltage, current gain, and transition frequency.

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Cristian Cerna
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60 views3 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The document provides product specifications for the 2N5157 silicon NPN power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3 package and pinning, absolute maximum ratings for voltage and current, thermal characteristics, and electrical characteristics such as collector-emitter saturation voltage, current gain, and transition frequency.

Uploaded by

Cristian Cerna
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2N5157

DESCRIPTION
With TO-3 package
High breakdown voltage

APPLICATIONS
Switching regulator
Inverters
Solenoid and relay drivers
Motor controls

PINNING (See Fig.2)

PIN DESCRIPTION

1 Base

2 Emitter
Fig.1 simplified outline (TO-3) and symbol
3 Collector

Absolute maximum ratings(Ta= )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 700 V

VCEO Collector-emitter voltage Open base 500 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current 3.5 A

PT Total power dissipation Tc=25 100 W

Tj Junction temperature 165

Tstg Storage temperature -65~200

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal resistance from junction to case 1.0 /W


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2N5157

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 500 V

VCEsat Collector-emitter saturation voltage IC=3A; IB=0.5A 1.2 V

VBEsat Base-emitter saturation voltage IC=3A; IB=0.5A 1.5 V

VCB=700V; IE=0 0.2


ICBO Collector cut-off current mA
TC=125 2.0

ICEO Collector cut-off current VCE=500V; IB=0 5.0 mA

IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA

hFE DC current gain IC=1A ; VCE=5V 30 90

fT Transition frequency IC=1A ; VCE=10V;f=5.0MHz 2.8 MHz

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2N5157

PACKAGE OUTLINE

Fig.2 Outline dimensions

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