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2SD198

The document provides the product specification for the 2SD198 Silicon NPN Power Transistor, detailing its features such as a TO-3 package and high breakdown voltage. It lists applications including voltage regulators, inverters, and switching mode power supplies, along with pin descriptions. Additionally, it outlines absolute maximum ratings and key characteristics, including collector-emitter voltage and current gain.

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jpmcjuan2
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58 views3 pages

2SD198

The document provides the product specification for the 2SD198 Silicon NPN Power Transistor, detailing its features such as a TO-3 package and high breakdown voltage. It lists applications including voltage regulators, inverters, and switching mode power supplies, along with pin descriptions. Additionally, it outlines absolute maximum ratings and key characteristics, including collector-emitter voltage and current gain.

Uploaded by

jpmcjuan2
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD198

DESCRIPTION
·With TO-3 package
·High breakdown voltage

APPLICATIONS
·voltage regulator
·Inverters
·Switching mode power supply

PINNING(see Fig.2)

PIN DESCRIPTION

1 Base

2 Emitter
Fig.1 simplified outline (TO-3) and symbol
3 Collector

Absolute maximum ratings(Ta= )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 300 V

VCEO Collector-emitter voltage Open base 300 V

VEBO Emitter-base voltage Open collector 6 V

IC Collector current 1 A

PC Collector power dissipation TC=75 25 W

Tj Junction temperature 165

Tstg Storage temperature -55~200


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD198

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 300 V

V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V

VCEsat Collector-emitter saturation voltage IC=1.0A; IB=0.1A 1.0 V

VBEsat Base-emitter saturation voltage IC=1.0A; IB=0.1A 1.5 V

ICBO Collector cut-off current VCB=300V; IE=0 0.1 mA

IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA

hFE DC current gain IC=0.1A ; VCE=5V 30 300

fT Transition frequency IC=0.5A ; VCE=10V 25 MHz

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD198

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

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