Scribd
Upload
154 views4 pages

C4300 NPN

This document provides specifications for the SavantIC Semiconductor 2SC4300 silicon NPN power transistor. It includes information on applications, pinning, maximum ratings, electrical characteristics, switching times, and package outline dimensions.

Uploaded by

Trongtai Pham
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
154 views4 pages

C4300 NPN

This document provides specifications for the SavantIC Semiconductor 2SC4300 silicon NPN power transistor. It includes information on applications, pinning, maximum ratings, electrical characteristics, switching times, and package outline dimensions.

Uploaded by

Trongtai Pham
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 4

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC4300

DESCRIPTION
·With TO-3PML package
·High voltage switchihg transistor

APPLICATIONS
·For switching regulator and
general purpose applications

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-3PML) and symbol
3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 900 V

VCEO Collector-emitter voltage Open base 800 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current 5 A

ICM Collector current-peak 10 A

IB Base current 2.5 A

PC Collector power dissipation TC=25 75 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC4300

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 800 V

VCEsat Collector-emitter saturation voltage IC=2A;IB=0.4A 0.5 V

VBEsat Base-emitter saturation voltage IC=2A;IB=0.4A 1.2 V

ICBO Collector cut-off current VCB=800V; IE=0 100 µA

IEBO Emitter cut-off current VEB=7V; IC=0 100 µA

hFE DC current gain IC=2A ; VCE=4V 10 30

fT Transition frequency IE=-0.5A ; VCE=12V 6 MHz

COB Output capacitance VCB=10V;f=1MHz 75 pF

Switching times

ton Turn-on time 1 µs

IC=2A;IB1=0.3A;IB2=-1A;
tstg Storage time 5 µs
RL=125A;VCC=250V

tf Fall time 1 µs

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC4300

PACKAGE OUTLINE

Fig.2 Outline dimensions

3
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC4300

You might also like