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2SC4029

The document provides the product specification for the 2SC4029 Silicon NPN Power Transistor, which is designed for power amplifier applications, particularly in high fidelity audio systems. It includes details on maximum ratings, characteristics, and pin configuration. The transistor features a TO-3PL package and is a complement to the 2SA1553 type.

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19 views4 pages

2SC4029

The document provides the product specification for the 2SC4029 Silicon NPN Power Transistor, which is designed for power amplifier applications, particularly in high fidelity audio systems. It includes details on maximum ratings, characteristics, and pin configuration. The transistor features a TO-3PL package and is a complement to the 2SA1553 type.

Uploaded by

a.s.m.n.al06
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC4029

DESCRIPTION
·With TO-3PL package
·Complement to type 2SA1553

APPLICATIONS
·Power amplifier applications
·Recommended for 120W high fidelity audio
frequency amplifier output stage

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 230 V

VCEO Collector-emitter voltage Open base 230 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 15 A

IB Base current 1.5 A

PC Collector power dissipation TC=25 150 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC4029

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 230 V

VCEsat Collector-emitter saturation voltage IC=8A ;IB=0.8A 3.0 V

VBE Base-emitter voltage IC=7A ; VCE=5V 1.5 V

ICBO Collector cut-off current VCB=230V IE=0 5 µA

IEBO Emitter cut-off current VEB=5V; IC=0 5 µA

hFE-1 DC current gain IC=1A ; VCE=5V 55 160

hFE-2 DC current gain IC=7A ; VCE=5V 35

fT Transition frequency IC=1A ; VCE=5V 30 MHz

COB Collector output capacitance f=1MHz;VCB=10V 270 pF

hFE-1 classifications
R O

55-110 80-160

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC4029

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC4029

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