SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1678
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
APPLICATIONS
·27MHz RF power amplifier applications
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-220) and symbol
3 Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 65 V
VCEO Collector-emitter voltage Open base 65 V
VEBO Emitter-base voltage Open collector 4 V
IC Collector current 3 A
IB Base current 0.4 A
IE Emitter current -3 A
PC Collector power dissipation TC=25 10 W
Tj Junction temperature 150
Tstg Storage temperature -55~150
Downloaded from: http://www.datasheetcatalog.com/
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1678
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
VCE(sat) Collector-emitter saturation voltage IC=0.5A; IB=50m A 1.0 V
V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 65 V
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 65 V
V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 4 V
ICBO Collector cut-off current VCB=30V;IE=0 10 µA
ICEO Collector cut-off current VCE=20V;IB=0 100 µA
hFE-1 DC current gain IC=0.5A ; VCE=5V 15
hFE-2 DC current gain IC=1.5A ; VCE=5V 10
COB Collectpr output capacitance IE=0 ; VCB=10V, f=1MHz 30 pF
fT Transition frequency IC=0.1A ; VCE=5V 100 MHz
Downloaded from: http://www.datasheetcatalog.com/
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1678
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
Downloaded from: http://www.datasheetcatalog.com/
This datasheet has been downloaded from:
www.DatasheetCatalog.com
Datasheets for electronic components.
Downloaded from: http://www.datasheetcatalog.com/
