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The document provides specifications for the SavantIC Semiconductor 2SD2066 silicon NPN power transistor. It includes descriptions of the TO-3PN package and pinning, absolute maximum ratings such as collector-emitter voltage of 160V, characteristics such as DC current gain of 15-200 depending on current and voltage conditions, and the package outline dimensions. The transistor is intended for high power amplifier applications operating at currents up to 12A and power dissipation up to 120W.

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Ahmed Sherif Cupo
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144 views4 pages

2519

The document provides specifications for the SavantIC Semiconductor 2SD2066 silicon NPN power transistor. It includes descriptions of the TO-3PN package and pinning, absolute maximum ratings such as collector-emitter voltage of 160V, characteristics such as DC current gain of 15-200 depending on current and voltage conditions, and the package outline dimensions. The transistor is intended for high power amplifier applications operating at currents up to 12A and power dissipation up to 120W.

Uploaded by

Ahmed Sherif Cupo
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD2066

DESCRIPTION
·With TO-3PN package
·Wide area of safe operation
·Complement to type 2SB1373

APPLICATIONS
·For high power amplifier applications

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

Absolute maximum ratings(Tc=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 160 V

VCEO Collector-emitter voltage Open base 160 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current (DC) 12 A

Ta=25 2.5
PC Collector power dissipation W
TC=25 120

Tj Junction temperature 150

Tstg Storage temperature -55~150

Downloaded from: http://www.datasheetcatalog.com/


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD2066

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0 160 V

VCEsat Collector-emitter saturation voltage IC=8A; IB=0.8A 2.0 V

VBE Base-emitter on voltage IC=8A;VCE=5V 1.8 V

ICBO Collector cut-off current VCB=160V; IE=0 50 µA

IEBO Emitter cut-off current VEB=5V; IC=0 50 µA

hFE-1 DC current gain IC=20mA ; VCE=5V 20

hFE-2 DC current gain IC=1A ; VCE=5V 60 200

hFE-3 DC current gain IC=8A ; VCE=5V 15

fT Transition frequency IC=0.5A ; VCE=5V 20 MHz

COB Collector output capacitance f=1MHz;VCB=10V 210 pF

hFE-2 Classifications

Q P

60-120 100-200

Downloaded from: http://www.datasheetcatalog.com/


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD2066

PACKAGE OUTLINE

Fig.2 outline dimensions

Downloaded from: http://www.datasheetcatalog.com/


This datasheet has been downloaded from:

www.DatasheetCatalog.com

Datasheets for electronic components.

Downloaded from: http://www.datasheetcatalog.com/

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