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Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

This document provides product specifications for the SavantIC Semiconductor 2SB778 silicon PNP power transistor. The transistor is in a TO-3PML package as a complement to the 2SD998 transistor. It is recommended for high power audio frequency amplifier output stages up to 45-50W. Key specifications include an absolute maximum collector current of -10A, DC current gain range of 55-160, and transition frequency up to 10MHz.

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146 views4 pages

Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

This document provides product specifications for the SavantIC Semiconductor 2SB778 silicon PNP power transistor. The transistor is in a TO-3PML package as a complement to the 2SD998 transistor. It is recommended for high power audio frequency amplifier output stages up to 45-50W. Key specifications include an absolute maximum collector current of -10A, DC current gain range of 55-160, and transition frequency up to 10MHz.

Uploaded by

Djalma Mota
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB778

DESCRIPTION
·With TO-3PML package
·Complement to type 2SD998

APPLICATIONS
·High power amplifier applications
·Recommended for 45~50W audio
frequency amplifier output stage

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-3PML) and symbol
3 Emitter

Absolute maximum ratings (Ta=25 )


SYMBOL PARAMETER CONDITIONS MAX UNIT

VCBO Collector-base voltage Open emitter -120 V

VCEO Collector-emitter voltage Open base -120 V

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -10 A

IB Base current -1.0 A

PC Collector power dissipation TC=25 80 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB778

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -120 V

VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -2.5 V

VBE Base-emitter on voltage IC=-5A;VCE=-5V -1.5 V

ICBO Collector cut-off current VCB=-120V; IE=0 -10 µA

IEBO Emitter cut-off current VEB=-5V; IC=0 -10 µA

hFE DC current gain IC=-1A ; VCE=-5V 55 160

fT Transition frequency IC=-1A ; VCE=-5V 10 MHz

COB Collector output capacitance IE=0;f=1MHz;VCB=-10V 280 pF

hFE Classifications

R O

55-110 80-160

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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB778

PACKAGE OUTLINE

Fig.2 outline dimensions

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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB778

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