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C4804 SavantIC

The document provides specifications for the 2SC4804 silicon NPN power transistor from SavantIC Semiconductor. It includes: 1) Key parameters like maximum ratings, breakdown voltages, saturation voltages, and current gain. 2) Details on the ITO-220 package and pinout. 3) Dimensions and outline for the packaging.

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Ghalielectrosoft Ges
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126 views3 pages

C4804 SavantIC

The document provides specifications for the 2SC4804 silicon NPN power transistor from SavantIC Semiconductor. It includes: 1) Key parameters like maximum ratings, breakdown voltages, saturation voltages, and current gain. 2) Details on the ITO-220 package and pinout. 3) Dimensions and outline for the packaging.

Uploaded by

Ghalielectrosoft Ges
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor

www.datasheet4u.com
Product Specification

Silicon NPN Power Transistors 2SC4804

DESCRIPTION
·With ITO-220 package
·High breakdown voltage

APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications

PINNING

PIN DESCRIPTION

1 Base

2 Collector

Fig.1 simplified outline (ITO-220) and symbol


3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 900 V

VCEO Collector-emitter voltage Open base 600 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current 3 A

ICM Collector current-Peak 5 A

IB Base current 1 A

PT Total power dissipation TC=25 30 W

Tj Junction temperature 150

Tstg Storage temperature -55~150

Free Datasheet http://www.Datasheet-PDF.com/


SavantIC Semiconductor
www.datasheet4u.com
Product Specification

Silicon NPN Power Transistors 2SC4804

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 600 V

V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 900 V

V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V

VCEsat Collector-emitter saturation voltage IC=0.8A; IB=0.16A 0.6 V

VBEsat Base-emitter saturation voltage IC=0.8A; IB=0.16A 1.2 V

ICBO Collector cut-off current VCB=800V; IE=0 0.1 mA

IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA

hFE DC current gain IC=0.8A ; VCE=5V 10

Free Datasheet http://www.Datasheet-PDF.com/


SavantIC Semiconductor
www.datasheet4u.com
Product Specification

Silicon NPN Power Transistors 2SC4804

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)

Free Datasheet http://www.Datasheet-PDF.com/

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