SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors MJL21193
DESCRIPTION
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·With TO-3PL package
·Complement to type MJL21194
·Excellent gain linearity
APPLICATIONS
·Designed for high power audio output,disk
head positioners and linear applications
PINNING
PIN DESCRIPTION
1 Emitter
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
3 Base
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL PARAMETER CONDITIONS MAX UNIT
VCBO Collector-base voltage Open emitter -400 V
VCEO Collector-emitter voltage Open base -250 V
VEBO Emitter-base voltage Open collector -5 V
IC Collector current -16 A
ICM Collector current-peak -30 A
IB Base current -5 A
PD Total power dissipation TC=25 200 W
Tj Junction temperature -65~150
Tstg Storage temperature -65~150
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth j-C Thermal resistance from junction to case 0.7 /W
SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors MJL21193
CHARACTERISTICS
Tj=25 unless otherwise specified
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SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-100mA ;IB=0 -250 V
VCE(sat)-1 Collector-emitter saturation voltage IC=-8A; IB=-0.8A -1.4 V
VCE(sat)-2 Collector-emitter saturation voltage IC=-16A; IB=-3.2A -4.0 V
VBE(ON) Base-emitter on voltage IC=-8A ; VCE=-5V -2.2 V
ICEX Collector cut-off current VCE=-250V; VBE(off)=-1.5V -100 µA
ICEO Collector cut-off current VCE=-200V; IB=0 -100 µA
IEBO Emitter cut-off current VEB=-5V; IC=0 -100 µA
hFE-1 DC current gain IC=-8A ; VCE=-5V 25 75
hFE-2 DC current gain IC=-16A ; VCE=-5V 8
fT Transition frequency IC=-1A ; VCE=-10V,f=1MHz 4 MHz
COB Collector output capacitance f=1MHz;VCB=-10V,IE=0 500 pF
2
SavantIC Semiconductor Product Specification
Silicon PNP Power Transistors MJL21193
PACKAGE OUTLINE
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Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
