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4213 TPS Industrial Thermal Book

The 2SD1313 is a high power silicon NPN transistor in a TO-3PL package. It has a collector current rating of 25A and can dissipate up to 200W of power. It is suitable for high power amplifier and switching applications due to its high current and power handling capabilities as well as low saturation voltage and fast switching times. The document provides maximum ratings, electrical characteristics, and package outline dimensions for the transistor.

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Sebastian Espinoza
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106 views3 pages

4213 TPS Industrial Thermal Book

The 2SD1313 is a high power silicon NPN transistor in a TO-3PL package. It has a collector current rating of 25A and can dissipate up to 200W of power. It is suitable for high power amplifier and switching applications due to its high current and power handling capabilities as well as low saturation voltage and fast switching times. The document provides maximum ratings, electrical characteristics, and package outline dimensions for the transistor.

Uploaded by

Sebastian Espinoza
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1313

DESCRIPTION
·With TO-3PL package
·High power dissipation
·High collector current
·High speed switching
·Low saturation voltage

APPLICATIONS
·High power amplifier applications
·High power switching applications

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
3 Emitter

Absolute maximum ratings (Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 800 V

VCEO Collector-emitter voltage Open base 350 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current 25 A

ICM Collector current-peak 35 A

IB Base current 10 A

IBM Base current-peak 15 A

PC Collector power dissipation TC=25 200 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1313

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 350 V

VCEsat Collector-emitter saturation voltage IC=15A ;IB=3A 1.0 V

VBEsat Base-emitter saturation voltage IC=15A ;IB=3A 1.7 V

ICBO Collector cut-off current VCB=800V; IE=0 1 mA

IEBO Emitter cut-off current VEB=7V; IC=0 1 mA

hFE-1 DC current gain IC=1A ; VCE=5V 15

hFE-2 DC current gain IC=25A ; VCE=5V 6

fT Transition frequency IC=1A ; VCE=10V 6 MHz

COB Collector output capacitance f=1MHz;VCB=50V,f=1MHz 170 pF

Switching times

ton Turn-on time 0.8 µs

IC=15A ;IB1=-IB2=3A
tstg Storage time 3.0 µs
VCC@200V,RL=13.3A

tf Fall time 0.5 µs

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1313

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.50mm)

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