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PNP SILICON POWER TRANSISTOR

2SB772
PNP SILICON POWER TRANSISTOR

DESCRIPTION PACKAGE DRAWING (Unit: mm)

The 2SB772 is PNP silicon transistor suited for the output stage of 3
W audio amplifier, voltage regulator, DC-DC converter and relay 8.5 MAX.
driver.
3.2 ±0.2 2.8 MAX.
FEATURES
• Low saturation voltage

3.8 ±0.2
VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A)

12.0 MAX.
• Excellent hFE linearity and high hFE
hFE = 60 to 400 (VCE = −2 V, IC = −1 A)
• Less cramping space required due to small and thin package and
reducing the trouble for attachment to a radiator.
No insulator bushing required.

ABSOLUTE MAXIMUM RATINGS 12 TYP.

2.5 ±0.2
13.0 MIN.
Maximum Temperature

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Storage Temperature −55 to +150°C
Junction Temperature 150°C Maximum 0.55 +0.08
–0.05

Maximum Power Dissipation

Total Power Dissipation (TA = 25°C) 1.0 W
Total Power Dissipation (TC = 25°C) 10 W
Maximum Voltages and Currents (TA = 25°C) 0.8 +0.08
–0.05
1.2 TYP.
VCBO Collector to Base Voltage −40 V 2.3 TYP. 2.3 TYP.
VCEO Collector to Emitter Voltage −30 V
VEBO Emitter to Base Voltage −5.0 V
IC(DC) Collector Current (DC) −3.0 A 1: Emitter
IC(pulse)Note Collector Current (pulse) −7.0 A 2: Collector: connected to mounting plane
Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2% 3: Base

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Note
DC Current Gain hFE1 VCE = −2.0 V, IC = −20 mA 30 220
Note
DC Current Gain hFE2 VCE = −2.0 V, IC = −1.0 mA 60 160 400
Gain Bandwidth Product fT VCE = −5.0 V, IC = −0.1 A 80 MHz
Output Capacitance Cob VCB = −10 V, IE = 0, f = 1.0 MHz 55 pF
Collector Cutoff Current ICBO VCB = −30 V, IE = 0 A −1.0 µA
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Emitter Cutoff Current IEBO VEB = −3.0 V, IC = 0 A −1.0 µA

Note
Collector Saturation Voltage VCE(sat) IC = −2.0 A, IB = −0.2 A −0.3 −0.5 V
Note
Base Saturation Voltage VBE(sat) IC = −2.0 A, IB = −0.2 A −1.0 −2.0 V
Note Pulse Test: PW ≤ 350 µs, Duty Cycle ≤ 2%

CLASSIFICATION OF hFE
Rank R Q P E
Range 60 to 120 100 to 200 160 to 320 200 to 400
Remark Test Conditions: VCE = −2.0 V, IC = 1.0 A

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.

Document No. D17118EJ2V0DS00 (2nd edition) The mark shows major revised points.
(Previous No. TC-3569) www.DataSheet4U.com
Date Published March 2004 N CP(K)
Printed in Japan c 2004
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2SB772

TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted.)

VCE
IC

∆Rth
PT

TA TC

IC(pulse) 50%
VCE
IC(DC)
hFE

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VBE

hFE
TC = 25°C
IC

IB
IC

VRF
VCE VCE IC

IC = 10 A • IB VCE
IE = 0 A (Cob)
IC = 0 A (Cib)
VBE(sat)
Cib

Cob

t)
(sa
VCE
Cob
Cib
VCE(sat)
VBE(sat)

fT

IC IC VCB
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VEB

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Data Sheet D17118EJ2V0DS

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2SB772

• The information in this document is current as of March, 2004. The information is subject to change
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M8E 02. 11-1

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