DATA SHEET

SILICON POWER TRANSISTOR

2SA1741
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING

The 2SA1741 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm)
switching and features a high hFE at low VCE(sat). This transistor is
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.

FEATURES
• High hFE and low VCE(sat):
hFE ≥ 100 (VCE = −2 V, IC = −1 A)
VCE(sat) ≤ 0.3 V (IC = −3 A, IB = −0.15 A)
• Full-mold package that does not require an insulating board or
bushing when mounting.
Electrode Connection
1. Base
2. Collector
3. Emitter
.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Parameter Symbol Ratings Unit

Collector to base voltage VCBO −100 V

Collector to emitter voltage VCEO −60 V

Emitter to base voltage VEBO −7.0 V

Collector current (DC) IC(DC) −5.0 A

Collector current (pulse) IC(pulse)* −10 A

Base current (DC) IB(DC) −2.5 A

Total power dissipation PT (Tc = 25°C) 25 W

Total power dissipation PT (Ta = 25°C) 2.0 W

Junction temperature Tj 150 °C

Storage temperature Tstg −55 to +150 °C

* PW ≤ 300 µs, duty cycle ≤ 50%

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D16125EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)
© 2002
Printed in Japan
 2SA1741

ELECTRICAL CHARACTERISTICS (Ta = 25°°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Collector to emitter voltage VCEO(SUS) IC = −3.0 A, IB = −0.3 A, L = 1 mH −60 V
Collector to emitter voltage VCEX(SUS) IC = −3.0 A, IB1 = −IB2 = −0.3 A, −60 V
VBE(OFF) = 1.5 V, L = 180 µH, clamped

Collector cutoff current ICBO VCB = −60 V, IE = 0 −10 µA

Collector cutoff current ICER VCE = −60 V, RBE = 50 Ω, Ta = 125°C −1.0 mA
Collector cutoff current ICEX1 VCE = −60 V, VBE(OFF) = 1.5 V −10 µA
Collector cutoff current ICEX2 VCE = −60 V, VBE(OFF) = 1.5 V, −1.0 mA
Ta = 125 °C
Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 −10 µA
DC current gain hFE1* VCE = −2.0 V, IC = −0.5 A 100
DC current gain hFE2* VCE = −2.0 V, IC = −1.0 A 100 400
DC current gain hFE3* VCE = −2.0 V, IC = −3.0 A 60
Collector saturation voltage VCE(sat)1* IC = −3.0 A, IB = −0.15 A −0.3 V
Collector saturation voltage VCE(sat)2* IC = −4.0 A, IB = −0.2 A −0.5 V
Base saturation voltage VBE(sat)1* IC = −3.0 A, IB = −0.15 A −1.2 V
Base saturation voltage VBE(sat)2* IC = −4.0 A, IB = −0.2 A −1.5 V
Collector capacitance Cob VCB = −10 V, IE = 0, f = 1.0 MHz 130 pF
Gain bandwidth product fT VCE = −10 V, IC = −0.5 A 80 MHz
Turn-on time ton IC = −3.0 A, RL = 17 Ω, 0.3 µs
IB1 = −IB2 = −0.15 A, VCC ≅ −50 V
Storage time tstg 1.5 µs
Refer to the test circuit.
Fall time tf 0.3 µs

* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%

hFE CLASSIFICATION
Marking M L K
hFE2 100 to 200 150 to 300 200 to 400

TYPICAL CHARACTERISTICS (Ta = 25°°C)

Total Power Dissipation PT (W)

IC Derating dT (%)

Case Temperature TC (°C)

Case Temperature TC (°C)

2 Data Sheet D16125EJ1V0DS

 2SA1741

Single pulse

Collector Current IC (A)

Collector Current IC (A)

Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V)
Transient Thermal Resistance Rth

Without heatsink

With infinite heatsink

Pulse Width (s)

Collector Current IC (A)
Collector Current IC (A)

Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V)

Data Sheet D16125EJ1V0DS 3

 2SA1741

Pulse test
Pulse test
Collector Current IC (A)

DC Current Gain hFE

Single pulse

Base to Emitter Voltage VBE (V) Collector Current IC (A)

Pulse test

Collector Saturation Voltage VCE(sat) (V)

Pulse test
Pulse test
DC Current Gain hFE

Collector Current IC (A) Collector Current IC (A)

Pulse test
Base Saturation Voltage VBE(sat) (V)

Gain Bandwidth Product fT (MHz)

Collector Current IC (A) Collector Current IC (A)

4 Data Sheet D16125EJ1V0DS

 2SA1741

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SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT

Base current
waveform

Collector current
waveform

Data Sheet D16125EJ1V0DS 5

 2SA1741

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M8E 00. 4