DATA SHEET

SILICON POWER TRANSISTOR

2SA1010
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING

The 2SA1010 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)
voltage high-speed switching, and is ideal for use as a driver in
devices such as switching regulators, DC/DC converters, and high-
frequency power amplifiers.

FEATURES
• Low collector saturation voltage
• Fast switching speed
• Complementary transistor: 2SC2334

ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Parameter Symbol Ratings Unit

Collector to base voltage VCBO −100 V

Collector to emitter voltage VCEO −100 V

Pin Connection
Emitter to base voltage VEBO −7.0 V

Collector current (DC) IC(DC) −7.0 A

Collector current (pulse) IC(pulse)* −15 A

Base current (DC) IB(DC) −3.5 A

Total power dissipation PT (Tc = 25 °C) 40 W

Total power dissipation PT (Ta = 25 °C) 1.5 W

Junction temperature Tj 150 °C

Storage temperature Tstg −55 to +150 °C

* PW ≤ 300 µs, duty cycle ≤ 10%

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D16118EJ2V0DS00 © 2002

Date Published April 2002 N CP(K)
Printed in Japan
 2SA1010

ELECTRICAL CHARACTERISTICS (Ta = 25°°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Collector to emitter voltage VCEO(SUS) IC = −5.0 A, IB1 = −0.5 A, L = 1 mH −100 V

Collector to emitter voltage VCEX(SUS)1 IC = −5.0 A, IB1 = −IB2 = −0.5 A, −100 V

VBE(OFF) = 5.0 V, L = 180 µH, clamped

Collector to emitter voltage VCEX(SUS)2 IC = −10 A, IB1 = −1.0 A, IB2 = −0.5 A, −100 V
VBE(OFF) = 5.0 V, L = 180 µH, clamped

Collector cutoff current ICBO VCB = −100 V, IE = 0 −10 µA

Collector cutoff current ICER VCE = −100 V, RBE = 51 Ω, Ta = 125 °C −1.0 mA

Collector cutoff current ICEX1 VCE = −100 V, VBE(OFF) = 1.5 V −10 µA

Collector cutoff current ICEX2 VCE = −100 V, VBE(OFF) = 1.5 V, −1.0 mA

Ta = 125 °C

Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 −10 µA

DC current gain hFE1 VCE = −5.0 V, IC = −0.5 A* 40 200

DC current gain hFE2 VCE = −5.0 V, IC = −3.0 A* 40 200

DC current gain hFE3 VCE = −5.0 V, IC = −5.0 A* 20

Collector saturation voltage VCE(sat) IC = −5.0 A, IB = −0.5 A* −0.6 V

Base saturation voltage VBE(sat) IC = −5.0 A, IB = −0.5 A* −1.5 V

Turn-on time ton IC = −5.0 A, RL = 10 Ω, 0.5 µs

IB1 = −IB2 = −0.5 A, VCC ≅ −50 V
Storage time tstg 1.5 µs
Refer to the test circuit.
Fall time tf 0.5 µs

* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%

hFE CLASSIFICATION

Marking M L K

hFE2 40 to 80 60 to 120 100 to 200

TYPICAL CHARACTERISTICS (Ta = 25°°C)

2 mm aluminum board,
no insulating board,
Total Power Dissipation PT (W)

grease coating, natural

air cooling
Collector Current IC (A)

With infinite heatsink

Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V)

2 Data Sheet D16118EJ2V0DS

 DC Current Gain hFE Collector Current IC (A) IC Derating dT (%)

Collector Current IC (A)

Case Temperature TC (°C)

Collector to Emitter Voltage VCE (V)

Base Saturation Voltage VBE(sat) (V)
Collector Saturation Voltage VCE(sat) (V) Collector Current IC (A) Transient Thermal Resistance θth(j-c) (°C/W)

Data Sheet D16118EJ2V0DS

Pulse Width PW (ms)

Collector Current IC (A)

Collector to Emitter Voltage VCE (V)

3
2SA1010
 2SA1010

Turn-On Time ton (µs)

StorageTime tstg (µs)
Fall Time tf (µs)

Collector Current IC (A)

Base current
waveform

Collector current
waveform

4 Data Sheet D16118EJ2V0DS

 2SA1010

[MEMO]

Data Sheet D16118EJ2V0DS 5

 2SA1010

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M8E 00. 4