DATA SHEET

SILICON TRANSISTOR

2SC3810
NPN SILICON EPITAXIAL TRANSISTOR
FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS
INDUSTRIAL USE

FEATURES PACKAGE DIMENSIONS (in millimeters)

• The 2SC3810 is an NPN silicon epitaxial dual transistor having
a large-gain-bandwidth product performance in a wide operating 5.0 MIN. 3.5 +0.3
-0.2 5.0 MIN.

0.6 ± 0.1
1.25 ± 0.1
current range. 3 2
• Dual chips in one package can achieve high performance for
differential amplifiers and current mode logic (CML) circuits. 4 1
5

5.0 MIN.
0.6 ± 0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

2.0 MAX.
-0.03
0.1 +0.06
PARAMETER SYMBOL RATINGS UNIT
Collector to Base Voltage VCBO 20 V (#492C)
Collector to Emitter Voltage VCEO 10 V
PIN CONNECTIONS
Emitter to Base Voltage VEBO 1.5 V 3 2
C1 C2
Collector Current IC 65/unit mA
4 1
Total Power Dissipation PT 240/unit mW B1 B2
Thermal Resistance (junction to case) Rth (j-c) 90/unit °C/W 5
E
Junction Temperature Tj 200 °C
Storage Temperature Tstg -65 to +200 °C

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Collector to Base Breakdown Voltage BVCBO IC = 10 µA 20 V
Emitter to Base Breakdown Voltage BVEBO IE = 10 µA, IC = 0 1.5 V
Collector to Emitter Breakdown Voltage BVCEO IC = 1 mA, RBE = ∞ 10 V
Collector Cut-off Current ICBO VCB = 10 V, IE = 0 1.0 µA
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 1.0 µA
DC Current Gain hFE VCE = 8 V, IC = 20 mA 50 100 250
Note 1
hFE Ratio hFE1/hFE2 VCE = 8 V, IC = 20 mA 0.6 1.0
Difference of Base to Emitter Voltage ∆ VBE VCE = 8 V, IC = 20 mA 30 mV
Gain Bandwidth Product fT Note 2 VCE = 8 V, IC = 20 mA 7 8 GHz
Feedback Capacitance Cre Note 3 VCB = 10 V, IE = 0, f = 1.0 MHz 0.5 1.0 pF
Notes 1. hFE1 is the smaller hFE value of the 2 transistors.
2. Measured using a single-type device (equivalent to the 2SC3604).
3. Measured with a 3-terminal bridge, terminals other than the collector and base of the device under test should be connected to
the guard terminal of the bridge.

Document No. P11698EJ1V0DS00 (1st edition)

Date Published July 1996 P
Printed in Japan
© 1996
 2SC3810

REGARDING CLEANSING

Cleanse the flux after soldering. Particularly, cleanse the bottom surface of the transistor so that flux does not remain.
If any flux remains on the bottom surface, it may absorb moisture, resulting in short circuit among pins due to metal-migration
at the metalized area of the transistor. You can use alcohol as a solvent.
Do not apply ultra-sonic-cleaning on this product.

TYPICAL CHARACTERISTICS (TA = 25 °C)

FEEDBACK CAPACITANCE vs. DC CURRENT GAIN vs.

COLLECTOR TO BASE VOLTAGE COLLECTOR CURRENT
3 200
f = 1.0 MHz VCE = 8 V
2
Cre - Feedback Capacitance - pF

100

hFE - DC Current Gain

1

0.7 50
0.5

0.3
20
0.2

10
0.1 0.5 1 5 10 50
1 2 3 5 7 10 20 30 IC - Collector Current - mA
VCB - Collector to Base Voltage - V

GAIN BANDWIDTH PRODUCT vs.

COLLECTOR CURRENT
30
VCE = 8 V
20
fT - Gain Bandwidth Product - GHz

10

1
2 3 5 7 10 20 30
IC - Collector Current - mA

2
 2SC3810

[MEMO]

3
 2SC3810

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Anti-radioactive design is not implemented in this product.

M4 94.11