DATA SHEET

SILICON POWER TRANSISTOR

2SA1649, 2SA1649-Z
PNP SILICON EPITAXIAL POWER TRANSISTOR
FOR HIGH-SPEED SWITCHING

The 2SA1649 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.

FEATURES
• Available for high-current control in small dimension
• Z type is a lead processed product and is deal for mounting a
hybrid IC.
• Mold package that does not require an insulating board or
insulation bushing
• Low collector saturation voltage:
VCE(sat) = −0.3 V MAX. (@IC = −3 A)
• Fast switching speed:
tf = 0.3 µs MAX. (@IC = −3 A)
• High DC current amplifiers and excellent linearity

ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Parameter Symbol Ratings Unit

Collector to base voltage VCBO −40 V

Collector to emitter voltage VCEO −30 V
Emitter to base voltage VEBO −7.0 V
Collector current (DC) IC(DC) −10 A
Collector current (pulse) IC(pulse)* −20 A
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Base current (DC) IB(DC) −3.5 A %DVH
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Total power dissipation PT (Tc = 25 °C) 15 W (PLWWHU
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Total power dissipation PT (Ta = 25 °C) 1.0**, 2.0*** W
Junction temperature Tj 150 °C

Storage temperature Tstg −55 to +150 °C

*: PW ≤ 300 µs, duty cycle ≤ 10%

**: Printing board mounted
***: 7.5 mm × 0.7 mm ceramic board mounted
2

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D15588EJ2V0DS00 (2nd edition) © 2002

Date Published April 2002 N CP(K)
Printed in Japan
 2SA1649, 2SA1649-Z

ELECTRICAL CHARACTERISTICS (Ta = 25°°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Collector to emitter voltage VCEO(SUS) IC = −4.0 A, IB = −0.4 A, L = 1 mH −30 V
Collector to emitter voltage VCEX(SUS) IC = −4.0 A, IB2 = −IB1 = −0.4 A, −40 V
VBE(OFF) = 1.5 V, L = 180 µH, clamped

Collector cutoff current ICBO VCE = −30 V, IE = 0 −10 µA

Collector cutoff current ICER VCE = −30 V, RBE = 50 Ω, Ta = 125°C −1.0 mA
Collector cutoff current ICEX1 VCE = −30 V, VBE(OFF) = 1.5 V −10 µA
Collector cutoff current ICEX2 VCE = −30 V, VBE(OFF) = 1.5 V, −1.0 mA
Ta = 125°C
Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 −10 µA
DC current gain hFE1* VCE = −2.0 V, IC = −0.5 A 100 −
DC current gain hFE2* VCE = −2.0 V, IC = −2.0 A 100 200 400 −
DC current gain hFE3* VCE = −2.0 V, IC = −4.0 A 60 −
Collector saturation voltage VCE(sat)1* IC = −3.0 A, IB = −0.2 A −0.3 V
Collector saturation voltage VCE(sat)2* IC = −4.0 A, IB = −0.3 A −0.5 V
Base saturation voltage VBE(sat)1* IC = −3.0 A, IB = −0.2 A −1.2 V
Base saturation voltage VBE(sat)2* IC = −4.0 A, IB = −0.3 A −1.5 V
Collector capacitance Cob VCB = −10 V, IE = 0, f = 1.0 MHz 250 pF
Gain bandwidth product fT VCE = −10 V, IC = −0.5 A 120 MHz
Turn-on time ton IC = −4.0 A, RL = 5 Ω, 0.3 µs
IB1 = −IB2 = −0.15 A, VCC ≅ −20 V
Storage time tstg 1.5 µs
Refer to the test circuit.
Fall time tf 0.3 µs

* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%/pulsed

h)( CLASSIFICATION

Marking M L K

hFE2 100 to 200 150 to 300 200 to 400

SWITCHING TIME (tRQ, tVWJ, tI) TEST CIRCUIT

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2 Data Sheet D15588EJ2V0DS

 2SA1649, 2SA1649-Z

TYPICAL CHARACTERISTICS (Ta = 25°°C)

Data Sheet D15588EJ2V0DS 3

 2SA1649, 2SA1649-Z

4 Data Sheet D15588EJ2V0DS

 2SA1649, 2SA1649-Z

[MEMO]

Data Sheet D15588EJ2V0DS 5

 2SA1649, 2SA1649-Z

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M8E 00. 4