DATA SHEET

SILICON POWER TRANSISTOR

2SC3570
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING

The 2SC3570 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)
voltage high-speed switching, and is ideal for use in drivers such as
switching regulators, DC/DC converters, and high-frequency power
amplifiers.

FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• Low collector saturation voltage:
VCE(sat) = 1.0 V MAX. (@ 2 A)
• Fast switching speed:
tf ≤ 0.7 µs MAX. (@ 2 A)
• Wide base reverse-bias SOA:
VCEX(SUS) = 450 V MIN. (@ 2 A)

ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Parameter Symbol Ratings Unit

Collector to base voltage VCBO 500 V

Collector to emitter voltage VCEO 400 V Electrode Connection

1. Base
Emitter to base voltage VEBO 8.0 V
2. Collector
Collector current (DC) IC(DC) 5.0 A 3. Emitter

Collector current (pulse) IC(pulse)* 10 A

Base current (DC) IB(DC) 2.5 A

Total power dissipation PT (Tc = 25°C) 25 W

Total power dissipation PT (Ta = 25°C) 2.0 W

Junction temperature Tj 150 °C

Storage temperature Tstg −55 to +150 °C

* PW ≤ 300 µs, duty cycle ≤ 10%

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D16188EJ1V0DS00

Date Published April 2002 N CP(K) © 2002
1998
Printed in Japan
 2SC3570

ELECTRICAL CHARACTERISTICS (Ta = 25°°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Collector to emitter voltage VCEO(SUS) IC = 2.0 A, IB1 = 0.4 A, L = 1 mH 400 V
Collector to emitter voltage VCEX(SUS)1 IC = 2.0 A, IB1 = −IB2 = 0.4 A, 450 V
L = 180 µH, clamped

Collector to emitter voltage VCEX(SUS)2 IC = 4.0 A, IB1 = 0.8 A, −IB2 = 0.4 A, 400 V
L = 180 µH, clamped
Collector cutoff current ICBO VCB = 400 V, IE = 0 10 µA
Collector cutoff current ICER VCE = 400 V, RBE = 51 Ω, Ta = 125°C 1.0 mA
Collector cutoff current ICEX1 VCE = 400 V, VBE(OFF) = −1.5 V 10 µA
Collector cutoff current ICEX2 VCE = 400 V, VBE(OFF) = −1.5 V, 1.0 mA
Ta = 125°C
Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 10 µA
DC current gain hFE1* VCE = 5.0 V, IC = 0.5 A 20 80
DC current gain hFE2* VCE = 5.0 V, IC = 2.0 A 10
Collector saturation voltage VCE(sat)* IC = 2.0 A, IB = 0.4 A 1.0 V
Base saturation voltage VBE(sat)* IC = 2.0 A, IB = 0.4 A 1.2 V
Turn-on time ton IC = 2.0 A, RL = 75 Ω, 1.0 µs
IB1 = −IB2 = 0.4 A, VCC ≅ 150 V
Storage time tstg 2.0 µs
Refer to the test circuit.
Fall time tf 0.7 µs

* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%

hFE CLASSIFICATION
Marking M L K
hFE1 20 to 40 30 to 60 40 to 80

TYPICAL CHARACTERISTICS (Ta = 25°°C)

Total Power Dissipation PT (W)

Collector Current IC (A)

Case Temperature TC (°C) Collector to Emitter Voltage VCE (V)

2 Data Sheet D16188EJ1V0DS

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M8E 00. 4