DATA SHEET
SILICON POWER TRANSISTOR
2SD2165
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm)
for high hFE. This transistor is ideal for simplifying drive circuits and
10.0 ±0.3 4.5 ±0.2
reducing power dissipation because its hFE is as high as that of
φ 3.2 ±0.2 2.7 ±0.2
Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin-molded
insulation package, thus contributing to high-density mounting and
15.0 ±0.3
3 ±0.1
12.0 ±0.2
mounting cost reduction.
FEATURES
13.5 MIN.
• High hFE and low VCE(sat):
4 ±0.2
hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 1.0 A)
VCE(SAT) ≅ 0.3 V TYP. (IC = 3.0 A, IB = 30 mA)
• Mold package that does not require an insulating board or 0.7 ±0.1 1.3 ±0.2 2.5 ±0.1
insulation bushing 1.5 ±0.2 0.65 ±0.1
2.54 TYP. 2.54 TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Electrode Connection
1. Base
Parameter Symbol Ratings Unit 2. Collector
1 2 3 3. Emitter
Collector to base voltage VCBO 100 V
Collector to emitter voltage VCEO 100 V
Emitter to base voltage VEBO 7.0 V
Collector current (DC) IC(DC) 6.0 A
Note
Collector current (pulse) IC(pulse) 10 A
Base current (DC) IB(DC) 1.0 A
Total power dissipation (TC = 25°C) PT 30 W
Total power dissipation (TA = 25°C) PT 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
Note PW ≤ 300 µs, duty cycle ≤ 10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13178EJ3V0DS00 (3rd edition)
Date Published March 2004 N CP(K) The mark shows major revised points. c 2002
Printed in Japan
2SD2165
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current ICBO VCB = 60 V, IE = 0 A 10 µA
Emitter cutoff current IEBO VEB = 7.0 V, IC = 0 A 10 µA
Note
DC current gain hFE1 VCE = 5.0 V, IC = 1.0 A 800 1,300 3,200
Note
DC current gain hFE2 VCE = 5.0 V, IC = 3.0 A 500 1,000
Note
Collector saturation voltage VCE(sat) IC = 3.0 A, IB = 30 mA 0.3 1.0 V
Note
Base saturation voltage VBE(sat) IC = 3.0 A, IB = 30 mA 1.2 V
Gain bandwidth product fT VCE = 5.0 V, IC = 0.1 A 110 MHz
Collector capacitance Cob VCB = 10 V, IE = 0 A, f = 1.0 MHz 50 pF
Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE1 CLASSIFICATION
Marking M L K
hFE1 800 to 1,600 1,000 to 2,000 1,600 to 3,200
2 Data Sheet D13178EJ3V0DS
2SD2165
TYPICAL CHARACTERISTICS (TA = 25°C)
Total Power Dissipation PT (W)
Derating dT (%)
Case Temperature TC (°C) Case Temperature TC (°C)
Single pulse
Collector Current IC (A)
Collector to Emitter Voltage VCE (V)
Transient Thermal Resistance r(t) (°C/W)
Without heatsink
With infinite heatsink
Pulse Width PW (s)
Data Sheet D13178EJ3V0DS 3
2SD2165
Pulse test
Collector Current IC (A)
DC Current Gain hFE
Collector Current IC (A)
Collector to Emitter Voltage VCE (V)
Collector Saturation Voltage VCE(sat) (V)
Base Saturation Voltage VBE(sat) (V)
Gain Bandwidth Product fT (MHz)
IC = 200 A • IB
A•I
B
1000 • IB
I C =
0 0A IB
5
IC = 0 A•
0
=2 IB
IC
0 A•
0
=1
IC
Collector Current IC (A) Collector Current IC (A)
Collector Capacitance Cob (pF)
Collector to Base Voltage VCB (V)
4 Data Sheet D13178EJ3V0DS
2SD2165
• The information in this document is current as of March, 2004. The information is subject to change
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M8E 02. 11-1
