DATA SHEET
THYRISTORS
2P4M,2P6M
2 A (4 Ar.m.s.) THYRISTOR
<R>
DESCRIPTION
<R>
PACKAGE DRAWING (Unit: mm)
The 2P4M and 2P6M are a P gate all diffused mold type Thyristor
granted 2 A On-state Average Current (TC = 77C), with rated voltages
up to 600 V.
FEATURES
Easy installation by TO-202AA package.
Less holding current distribution provides free application design.
APPLICATIONS
Electric blanket, Electronic jar, Various temperature control.
Electric sewing machine, Speed control of miniature type motor.
Light display equipment, Lamp dimmer such as a display
for entertainment.
1. Cathode
2. Anode
3. Gate
Standard weight : 1.4g
Automatic gas lighter, Battery charger.
Solid state static switches etc.
Note TC test point
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13531EJ5V0DS00 (5th edition)
(Previous No. SC-1031B)
Date Published July 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1985, 2006
2P4M,2P6M
<R>
MAXIMUM RATINGS
CHARACTERISTICS
SYMBOL
2P4M
2P6M
UNIT
REMARK
Non-repetitive Peak Reverse Voltage
Note
VRSM
500
700
RGK = 1 k
Non-repetitive Peak Off-state Voltage
Note
VDSM
500
700
RGK = 1 k
Repetitive Peak Reverse Voltage
Note
VRRM
400
600
RGK = 1 k
Repetitive Peak Off-state Voltage
Note
VDRM
400
600
On-state Current
IT(AV)
Effective On-state Current
IT(RMS)
Surge Non-repetitive On-state Current
ITSM
RGK = 1 k
2 (TC = 77C, = 180, Single phase half wave)
See Fig. 3, Fig. 4
See Fig. 10
20 (f = 50 Hz, sin half wave, 1 cycle)
Fusing Current
iT dt
1.6 (1 ms t 10 ms)
As
Critical Rate Rise of On-state Current
dIT/dt
50
A/s
Peak Gate Power Dissipation
PGM
0.5 (f 50 Hz, Duty 10%)
Average Gate Power Dissipation
PG(AV)
0.1
Peak Gate Forward Current
IFGM
0.2 (f 50 Hz, Duty 10%)
Peak Gate Reverse Voltage
VRGM
Junction Temperature
Tj
40 to +125
Storage Temperature
Tstg
55 to +150
Note TC: Case Temperature is measured at 1.5 mm from the neck of Tablet.
<R> ELECTRICAL CHARACTERISTICS (TA = 25C, RGK = 1 k)
CHARACTERISTICS
Repetitive Peak Reverse Current
Repetitive Peak Off-state Current
SYMBOL
Note
Note
IRRM
IDRM
TEST CONDITIONS
VRM = VRRM,
VDM = VDRM,
On-state Voltage
dVD/dt
TYP.
MAX.
UNIT
REMARK
V/s
2P4M
Tj = 25C
10
Tj = 125C
100
Tj = 25C
10
Tj = 125C
Critical Rate Rise of Off-state Voltage
MIN.
Tj = 125C, VDM = 2/3 VDRM
100
10
10
VTM
ITM = 4 A
2.2
See Fig. 1
2P6M
Gate-trigger Current
Note
IGT
VDM = 6 V, RL = 100 ,
200
See Fig. 5,
Gate-trigger Voltage
Note
VGT
VDM = 6 V, RL = 100 ,
0.8
See Fig. 6,
VGD
VDM = 1/2 VDRM, Tj = 125C,
0.2
Fig. 7
Fig. 8
Gate Non-trigger Voltage
Holding Current
Note
Note
Circuit Commuted Turn-off Time
IH
VDM = 24 V, ITM = 4 A
mA
See Fig. 9
tq
Tj = 125C, ITM = 500 mA,
30
C/W
See Fig. 11
diR/dt = 15 A/s, VR 25 V,
VDM = 2/3 VDRM, dVD/dt = 10 V/s
Thermal Resistance
Rth(j-c)
Junction to case DC
10
Rth(j-a)
Junction to ambient DC
75
Note Insert a resistance less than 1 k between gate and cathode, because the items indicated are guaranteed by
connecting short resistance between gate and cathode (RGK = 1 k).
Data Sheet D13531EJ5V0DS
2P4M,2P6M
TYPICAL CHARACTERISTICS (TA = 25C)
Data Sheet D13531EJ5V0DS
2P4M,2P6M
Data Sheet D13531EJ5V0DS
2P4M,2P6M
The information in this document is current as of July, 2006. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1
