The voltage across the diode VD is given by:
I0
VD = VT ln (1)
IS
where
kT
VT =
q
is a PTAT voltage with
∂VT k
= ,
∂T q
and IS is the reverse saturation current given by:
−E
g
IS = b T m exp
kT
(2)
where b is a constant, m = 1.5, and Eg is the energy gap between the
conduction and valence bands of silicon.