TDA2009A

10 +10W STEREO AMPLIFIER

. HIGH OUTPUT POWER

.. (10 + 10W Min. @ D = 1%)

HIGH CURRENT CAPABILITY (UP TO 3.5A)

.. AC SHORT CIRCUIT PROTECTION

THERMAL OVERLOAD PROTECTION
SPACE AND COST SAVING : VERY LOW
NUMBER OF EXTERNAL COMPONENTS
AND SIMPLE MOUNTING THANKS TO THE
MULTIWATT  PACKAGE.

MULTIW ATT11

ORDERING NUMBER : TDA2009A

DESCRIPTION
The TDA2009A is class AB dual Hi-Fi Audio power
amplifier assembled in Multiwatt  package, spe-
cially designed for high quality stereo application
as Hi-Fi and music centers.

PIN CONNECTION

May 1995 1/12

TDA2009A

SCHEMATIC DIAGRAM

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ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
Vs Supply Voltage 28 V
Io Output Peak Current (repetitive f ≥ 20 Hz) 3.5 A
Io Output Peak Current (non repetitive, t = 100 µs) 4.5 A
Ptot Power Dissipation at Tcase = 90 °C 20 W
Tstg, Tj Storage and Junction Temperature – 40, + 150 °C

THERMAL DATA
Symbol Parameter Value Unit
R th j-case Thermal Resistance Junction-case Max. 3 °C/W

ELECTRICAL CHARACTERISTICS
(refer to the stereo application circuit, Tamb = 25oC, VS = 24V, GV = 36dB, unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Vs Supply Voltage 8 28 V
Vo Quiescent Output Voltage Vs = 24V 11.5 V
Id Total Quiescent Drain Current Vs = 24V 60 120 mA
Po Output Power (each channel) d = 1%, Vs = 24V, f = 1kHz
R L = 4Ω 12.5 W
R L = 8Ω 7 W
f = 40Hz to 12.5kHz
R L = 4Ω 10 W
R L = 8Ω 5 W
Vs = 18V, f = 1kHz
R L = 4Ω 7 W
R L = 8Ω 4 W
d Distortion (each channel) f = 1kHz, Vs = 24V
Po = 0.1 to 7W RL = 4Ω 0.2 %
Po = 0.1 to 3.5W RL = 8Ω 0.1 %
Vs = 18V
Po = 0.1 to 5W RL = 4 Ω 0.2 %
Po = 0.1 to 2.5W RL = 8Ω 0.1 %
CT Cross Talk (3) R L = ∞, Rg = 10kΩ dB
f = 1kHz 60
f = 10kHz 50
Vi Input Saturation Voltage (rms) 300 mV
Ri Input Resistance f = 1kHz, Non Inverting Input 70 200 kΩ
fL Low Frequency Roll off (– 3dB) R L = 4Ω 20 Hz
fH High Frequency Roll off (– 3dB) R L = 4Ω 80 kHz
Gv Voltage Gain (closed loop) f = 1kHz 35.5 36 36.5 dB
∆Gv Closed Loop Gain Matching 0.5 dB
eN Total Input Noise Voltage R g = 10kΩ (1) 1.5 µV
R g = 10kΩ (2) 2.5 8 µV
SVR Supply Voltage Rejection (each channel) R g = 10kΩ 55 dB
fripple = 100Hz, Vripple = 0.5V
TJ Thermal Shut-down Junction Temperature 145 °C

Notes : 1. Curve A
2. 22Hz to 22kHz

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Figure 1 : Test and Application Circuit (GV = 36dB)

Figure 2 : P.C. board and component layout of the fig. 1

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 TDA2009A

Figure 3 : Output Power versus Supply Voltage Figure 4 : Output Power versus Supply Voltage

Figure 5 : Distortion versus Output Power Figure 6 : Distortion versus Frequency

Figure 7 : Distortion versus Frequency Figure 8 : Quiescent Current versus

Supply Voltage

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Figure 9 : Supply Voltage Rejection versus Figure 10 : Total Power Dissipation and
Frequency Efficiency versus Output Power

Figure 11 : Total Power Dissipation and

Efficiency versus Output Power

APPLICATION INFORMATION
Figure 12 : Example of Muting Circuit

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Figure 13 : 10W +10W Stereo Amplifier with Tone Balance and Loudness Control

Figure 14 : Tone Control Response

(circuit of Figure 13)

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Figure 15 : High Quality 20 + 20W Two Way Amplifier for Stereo Music Center (one channel only)

Figure 16 : 18W Bridge Amplifier (d = 1%, GV = 40dB)

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Figure 17 : P.C. BOARD and Components Layout of the Circuit of Figure 16 (1:1 scale)

APPLICATION SUGGESTION
The recommended values of the components are those shown on application circuit of fig. 1. Different
values can be used ; the following table can help the designer.
Recommended
Component Purpose Larger than Smaller than
Value
R1, R3 1.2kΩ Close Loop Gain Increase of Gain Decrease of Gain
R2, R4 18kΩ Setting (1) Decrease of Gain Increase of Gain
R5, R6 1Ω Frequency Stability Danger of Oscillation at High
Frequency with Inductive Load
C1, C2 2.2µF Input DC Decoupling High Turn-on Delay High Turn-on Pop.
Higher Low Frequency
Cut-off. Increase of Noise
C3 22µF Ripple Rejection Better SVR. Increase of the Degradation of SVR
Switch-on Time
C6, C7 220µF Feedback Input DC
Decoupling
C8, C9 0.1µF Frenquency Stability Danger of Oscillation
C10, C11 1000µF to Output DC Higher Low-frequency
2200µF Decoupling Cut-off
(1) The closed loop gain must be higher than 26dB.

BUILD-IN PROTECTION SYSTEMS

THERMAL SHUT-DOWN
The presence of a thermal limiting circuit offers the The maximum allowable power dissipation de-
following advantages: pends upon the size of the external heatsink (i.e.
1) an averload on the output (even if it is its thermal resistance); Figure 18 shows this dissi-
pe rman e nt ), o r an e xce ssive a mb ien t pable power as a function of ambient temperature
temperature can be easily withstood. for different thermal resistance.
2) the heatsink can have a smaller factor of safety
compared with that of a conventional circuit.
There is no device damage in the case of Short circuit (AC Conditions). The TDA2009A can
excessive junction temperature : all that withstand an accidentalshort circuit from the output
happens is that Po (and therefore Ptot) and Io are and ground made by a wrong connection during
reduced. normal play operation.

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MOUNTING INSTRUCTIONS
The power dissipated in the circuit must be re- the heatsink is very simple, a screw or a compres-
moved by adding an external heatsink. sion spring (clip) being sufficient. Between the
heatsinkand the package it is better to insert a layer
Thanks to the MULTIWATT  package attaching of silicon grease, to optimize the thermal contact ;
no electrical isolation is needed between the two
Figure 18 : Maximum Allowable Power Dissipa- Figure 19 : Output Power versus Case
tion versus Ambient Temperature Temperature

Figure 20 : Output Power and Drain Current ver-

sus Case Temperature

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MULTIWATT11 PACKAGE MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 5 0.197
B 2.65 0.104
C 1.6 0.063
D 1 0.039
E 0.49 0.55 0.019 0.022
F 0.88 0.95 0.035 0.037
G 1.45 1.7 1.95 0.057 0.067 0.077
G1 16.75 17 17.25 0.659 0.669 0.679
H1 19.6 0.772
H2 20.2 0.795
L 21.9 22.2 22.5 0.862 0.874 0.886
L1 21.7 22.1 22.5 0.854 0.87 0.886
L2 17.4 18.1 0.685 0.713
L3 17.25 17.5 17.75 0.679 0.689 0.699
L4 10.3 10.7 10.9 0.406 0.421 0.429
L7 2.65 2.9 0.104 0.114
M 4.25 4.55 4.85 0.167 0.179 0.191
M1 4.73 5.08 5.43 0.186 0.200 0.214
S 1.9 2.6 0.075 0.102
S1 1.9 2.6 0.075 0.102
Dia1 3.65 3.85 0.144 0.152

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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components inlife support devices or systems without express
written approval of SGS-THOMSON Microelectronics.

 1994 SGS-THOMSON Microelectronics - All Rights Reserved

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