LINEAR INTEGRATED CIRCUIT

12W Hi-Fi AUDIO AMPLIFIER

The TDA 2010 is a monolithic integrated operational amplifier in a 14-lead quad in-line plastic pa-
ckage, inteded for use as a low frequency class B power amplifier. Typically it provides 12W output
power (d = 1% ) at ± 14V /4n; at V s = ± 14V the guaranteed output power is 10W on a 4n load and
8W on a 8n load (DIN norm 45500). The TDA 2010 provides high output current (up to 3.5 A) and
has very low harmonic and cross-over distortion. Further, the device incorporates an original (and
patented) short circuit protection system, comprising an arrangement for automatically limiting the
dissipated power so as to keep to working point of the output transistors within their safe operating
area. A conventional thermal shut-down system is also included. The TDA 2010 is pin to pin equivalent
to TDA 2020.

ABSOLUTE MAXIMUM RATINGS

Vs Supply voltage ± 18 V
Vi I nput voltage Vs
Vi Differential input voltage ± 15 V
10 Output peak current (internally limited) 3.5 A
Ptot Power dissipation at T case < 95°C 18 W
T stg , T j Storage and junction temperature -40 to 150 °C

ORDERING NUMERS: TDA 2010 882 dual in-line plastic package

TDA 2010 B92 quad in-line plastic package
TDA 2010 BC2 dual in-line plastic package with spacer
TDA 2010 BD2 quad in-line plastic package with spacer

MECHANICAL DATA Dimensions in mm

683 6/82
CONNECTION AND SCHEMATIC DIAGRAMS
(top view)

~~----t-
I ,--i;----+_
rtJ ~-J+----*----+-~ ~-+-+--I:::'
12 POWER lINtYlNG
•
I,
I II
i I I
I
10 CO ...PEttSATlON

9 COIolPENSATlON

8 INVERTING INPUT
I

I
The copper slug is electrically
connected to pin 5 (substrate)
l_L l-.~_J----~------,_-,,~---o
,6

TEST CIRCUIT

*
02

5-113912
*IN 4001 OR EQUIVALENT

THERMAL DATA
Thermal resistance junction-case max

684
 I

i;1
l'I
.
Ii
i

ELECTRICAL CHARACTERISTICS
(Refer to the test circuit, V s = ± 14V, T amb = 25°C unless otherwise specified)

Parameter Test conditions Min. Typ. Max. Unit

Vs Supply voltage ± 5 ± 18 V

Id Quiescent drain current Vs ~ ± 18V 45 mA

Ib I nput bias current 0.15 )J.A

Vos I nput offset voltage 5 mV

Vs ~ ± 17V
los I nput offset current 0.05 )J.A

Vos Output offset voltage 10 100 mV

Po Output power d =1%

T case " 7ft' C
f ~ 40 to 15 000 Hz
RL~4 n 10 12 W
RL ~ 8 n 8 9 W

d ~ 10%
T case" 7Cf'C f ~ 1 kHz
RL ~4n 15 W
RL ~8 n 12 W

Vj I nput sensitivity f ~ 1 kHz

P~ ~ lOW RL ~ 4 n 220 mV
P0 ~ 8W RL ~8 n 250 mV

B Frequency response (-3dB) RL ~ 4 n C4 ~ 68 pF 10 to 160000 Hz

d Distortion Po ~ 100mWto lOW

RL ~ 4 n
T case" 7Cf'C
f ~ 1 kHz 0.1 %
f ~ 40 to 1 5 000 Hz 0.3 1 %

P0 ~ 100 mW to 8 W
RL ~8 n
T case" 7ft'C
f ~ 1 kHz 0.1 %
f ~ 40 to 15 000 Hz 0.2 1 %

Rj Input resistance (pin 7) 5 Mn

Gv Voltage gain (open loop) 100 dB

RL ~ 4 n f ~ 1 kHz
Gv Voltage gain (closed loop) 29.5 30 30.5 dB

eN Input noise voltage RL ~4 n 4 )J.V

iN I nput noise current B (-3 dB) ~ 22 Hz to 22 KHz 0.1 nA

685
ELECTRICAL CHARACTERISTICS (continued)
Parameter Test conditions Min. Typ. Max. Unit

SVR Supply voltage rejection R,_ = 4 n

fripple = 100 Hz 50 dB

Id Drain current Po = 12 W RL = 4 n 0.8 A

Pa = 9W RL = 8 n 0.5 A

Tsd Thermal shut-down

junction temperature 145 DC

Tsd (*l Thermal shut·down case

temperature P tat = 10.5 W 120 DC

(*l See fig. 14.

Fig. 1 - Output power vs. Fig.2 - Output power vs. Fig. 3 - Distortion vs. output
supply voltage (>·16'7/1
supply voltage G_I64611
power
(W I (WI ('/.) I--h-i-Dillilllllll_+-+1+1I!~+t.lt-HC-t-t-H+I'.JJI
16
d ~ ",.
(\,"30dB

~
16 - I--
d ,,10".
f ,,1kHz
GV"30dB
,/
/'
"I ~v ~~~~zB+-,I-tlitt
Ht 1-++ v, ."" I' '+III'H-i-+-Htt.JJI
Itttt-Il-t-+THtffi
+I'.

12
;/ f/ / / 'II', II!
.•~:,.::::.v / / 1/ I '. ! aD! ':
\>oy't. ~~1- V V /
.// ~~~ RL 40
,/ ,/
4nV V t.oVli /' - + +':HiIt--+_C' HttIJI+-;-I
~ ~ __ ,I II
i , i I II II
15 ~ Vs (V)

Fig.4 - Distortion vs. output Fig. 5 - Distortion vs. output Fig. 6 - Distortion vs. fre-
power (R L = 4 n) G-1649
power (R L =8 n) quency G165312
, ,; Fi ['j--cTrrm----,-,-oT'Tin
d
('1.I II II '11" I
d
("I.) I II IIIIII!II ! ], il
:
I

~::~l~V
I{~
oa I 08 -~-RL
RL .. 4Cl Po "lOW
=8ft Po - 8W I
~~ : ~~4dVB I I ,
Gv "30dS

0.6 I ! j!,I] II 'I, I,

I i iI I I
04
,
15KHz I Ij " I.!' "
i
,
II II I II
, II . III
0.2
40H,' I ~ I
0.2

02
~Tjl 1-1+ I :,,'.1'·1
!
'V
,,
lkH~ 1 , .
10
I , . 10-1 10
I
, " , "'
10"
, "
lO4
""
I (Hz)

686
 Fig. 7 - Output power vs. Fig.8 - Sensitivity vS.output Fig. 9 - Sensitivity vs. output
frequency power (R L = 4 n) power (R L =8 n)
G_!65

L,+,~
v,
(mV) -1v,J;-;h
RL .4[l
f=lkHl'!
-± ~rli I~i+~
i- .
v,
(mV)
350
H-+'V,.1,M,,\'-V+ t-+-H--t-+
RL=sn

~l'ct 240 ....r 300

A'
G". =JOd

""V' -r",'Od8!
RL~4 250
200
!
II "0 ,.,V 200

t it a,~, /
I
I:Vs=!14V
. w' 'ltiI'~+ttt+tll--H111lti1
120
[,L- I 150

Gv =30dBIIll-+l+HltiI-++HltiI "
d=l"'.
r;p r--7 :~~
'lR~~TT
I
G,,"
" -I
I

I (Hz) 10 Po(W) >C Po(W)

Fig. 11 - Value of C4 vs. Fig. 12 - Quiescent current

voltage gain for different vs. supply voltage
bandwidths
I,

"
.0

"
lei (OUTPUT TRANSISTORS

20

>C. >c' >C' >C' 10~ ~ (H:rl >C >C. G, " 15 17 Vs (V)

Fig. 13 - Supply voltage Fig. 14 - Power dissipation Fig. 15 - Maximum power

rejection vs. voltage gain and efficiency vs. output dissipation vs. supply voltage
power (sine wave operation)
G_165812 0-1"58
SVR .n Plot
Ptot ~
,W) (0'.) ,W)
(dBl ---8.0.

80
VS=!14V
lTiPPle=l00Hzl-
I
I
I. Plot
eo
"

60 .0 12 V
I-("
" ........ ,/
........
" V

-
... 101
V ..-an
20
-1::: p.,. Vs=!"14V
f"lkH:i" ,
Gv =30dB
20
,/ ~
I
12 16 Po(Wl 13 15 tV. IV)
20 30 50 G",(dB)

687
APPLICATION INFORMATION

Fig. 16 - Application circuit with split power supply

13 ~C5
.
01
O.l~!
....
IOO~FT'

R,
10

C8
.
02
RL

OJ~F

J.. O-Vo 5-1141/2

"N,OO' OR EQUIVALENT

Fig. 17 - P.C. board and component layout for the circuit of fig. 16 (1:1 scale)

CS-0074

688
SHORT CIRCUIT PROTECTION
The most important innovation in the TDA 2010 is an original circuit which limits the current of the
output transistors. Fig.18 shows that the maximum output current is a function of the collector-
emitter voltage; hence the output transistors work within their safe operating area (fig. 19). This function
can therefore be considered as being peak power limiting rather than simple current limiting. The TDA
2010 is thus protected against temporary overloads or short circuit. Should the short circuit exists for
a longer time, the thermal shut-down comes into action and keeps the junction temperature within
safe limits.
Fig. 18 - Maximum output Fig. 19 - Safe operating "rea and
current vs. voltave (V CE) collector characteristics of the pro-
across each output transistor tected power transistor.
!
I c,I \
\....-P1ot =k
\
\
Ie max. \

a2 ar.a\
Second breakdowl'\

-,
-+ L -____________________~
20 30 VCEQ1 (vl
VCr::
-20 -10 0 5-076411

THERMAL SHUT-DOWN
The presence of a thermal limiting circuit offers the following advantages:
1) an overload on the output (even if it is permanent). or an above-limit ambient temperature can be
easily supported since the Tj cannot be higher than 150°C
2) the heatsink can have a smaller factor of safety compared with that of a conventional circuit. There
is no possibility of device damage due to high junction temperature.
If, for any reason, the junction temperature increases up to 150°C, the thermal shut-down simply redu-
ces the power dissipation and the current consumption.
Fig. 20 - Output power and Fig. 21 - Output power and
drain current vs. case tempe- drain current vs. case tempe-
rature (R L =8 n) rature (R L = 4 n)
~l rr-',,-'r-r-',,~-.r=.!.T'''~-'\iV-r'±T"",61 (:~
f-++-t-++-t-++-t-1R l "811.

10 f-++-H-+-toPot-+-t '0 f-++-t-++-H

H-H-++.::r'd-++'-+H. \ 08

, ,. + 06

_.fWtU~++-t++\t-I-~ ::
... ri ' ! . • ' • .

50 '00 50 100 Tease (·C)

689
MOUNTING INSTRUCTIONS
Fig. 22 - Mounting system of TDA 2010
The power dissipated in the circuit must be removed
by adding an external heatsink as shown in figs. 22
and 23.
The system for attaching the heatsink is very simple:
it uses a plastic spacer wh ich is suppl ied with the
device. HEATSINK
Thermal contact between the copper slug (of the ----. R 1h :. 2toS·C/W
package) and the heatsink is guaranteed by the pres·
sure which the screws exert via the spacer and the
printed circuit board; this is due to the particular
shape of the spacer.

~
-- . ---CONTACT

(SILICONE GREASE)

Note: The most negative supply voltage is connected to the R1h=q rfcjw
copper slug, hence to the heatsink (because it is in

~.-----s1'AC'"
contact with the slug).

~.- - --_'_'._0
Fig. 23 - Cross-section of mounting system Q Q

Fig. 24 - Maximum allowa-

ble power dissipation vs.
ambient temperature

The maximum allowable power dissipation depends

upon the size of the external heatsink (i.e. its thermal
resistance); fig. 24 shows this dissipable power as a
function of ambient temperature for different thermal
resistance.

690