VLSI Testing
Memory Test
Virendra Singh
Indian Institute of Science Bangalore
virendra@computer.org E0286: Testing and Verification of SoC Designs Lecture 27
Apr 02, 2008 E0286@SERC 1
RAM Organization
. . .
A 5 DATA IN TRISTATE DATABUS INPUT BUFFERS R/W 1 R/W CS CONTROL R/W2 y 0 y 63
ROW ADDRESS BUFFERS
ROW (X) DECODER
a 0
x 0 CELL ARRAY 64 X 64 Cells 4 K Bits b0 b0 b 63 b63
a 5
63
BITLINE PAIRS SENSE AMPLIFIER DATA OUT TRISTATE OUTPUT BUFFER
DATABUS
COLUMN (Y) DECODER s s s 0 0 11 s11 COLUMN ADDRESS BUFFERS A6
. . .
A11
Apr 02, 2008
E0286@SERC
Test Time
Size Number of Test Algorithm Operations
n bits
1 Mb 4 Mb 16 Mb 64 Mb 256 Mb 1 Gb 2 Gb
n
0.06 0.25 1.01 4.03 16.11 64.43 128.9
n  log2n
1.26 5.54 24.16 104.7 451.0 1932.8 3994.4
n3/2
n2
64.5 18.3 hr 515.4 293.2 hr 1.2 hr 4691.3 hr 9.2 hr 75060.0 hr 73.3 hr 1200959.9 hr 586.4 hr 19215358.4 hr 1658.6 hr 76861433.7 hr
Apr 02, 2008
E0286@SERC
SRAM Fault Models
Faults found only in SRAM
Open-circuited pull-up device Excessive bit line coupling capacitance
Model
DRF CF
Apr 02, 2008
E0286@SERC
DRAM Only Fault Models
Faults only in DRAM Model
DRF SAF PSF CF PSF AF
Data retention fault (sleeping sickness) Refresh line stuck-at fault Bit-line voltage imbalance fault Coupling between word and bit line Single-ended bit-line voltage shift Precharge and decoder clock overlap
Apr 02, 2008
E0286@SERC
Fault Modeling