ME MORY

DR A M Mo d u l e s
Pr o d u c t I n f o r ma t i o n 2 0 0 4
I n c l u d i n g
D D R 2 Mo d u l e s
N e v e r s t o p t h i n k i n g .
w w w. i n f i n e o n . c o m / m e m o r y
2
One-Stop-Shopping for DRAM Modules
J U N E 2 0 0 4 . As a leading memory products supplier, we offer an extensive range of leading-edge DRAM modules.
These DRAM modules come in a variety of designs and densities to meet your application-specific needs.
WH E T H E R Y O U R E L O O K I N G to ramp up speed, increase density, or extend battery life, youll find answers
in this brochure. Many of our DRAM modules now also come in green packages, enabling you to get a head start on
upcoming environmental regulations.
For more detailed information on the products presented in the table, please visit www.infineon.com/memory.
The following table covers all products and densities available:
Double Data Rate (DDR / DDR2), Dual Inline Memory Modules (DIMMs).
Range of typical applications
Short introduction of Fully Buffered DIMMs, MicroDIMMs, and Mini-DIMMs
Upcoming technical and product-related trends
DDR2 module details
DDR module information
Package-based information such as chip-sized package and stacked die technology
Green (lead and halogen-free), more environmentally friendly modules
I n t r o d u c t i o n
128 MB 256 MB 512 MB 1 GB 2 GB 4 GB
Unbuffered DDR + + + +
Registered DDR + + + +
Registered DDR Reduced Height + + + + +
SO-DIMM DDR + + + +
Unbuffered DDR2 + + + +
Registered DDR2 + + + + +
SO-DIMM DDR2 + + + +
Highlights of this Brochure
3
A p p l i c a t i o n s
Unbuffered DIMM
Memory that does not contain buffers or registers located on the module.
( Number of pins: DDR2 = 240, DDR = 184, SDR = 168)
Registered DIMM
Several additional circuits are on the module, including a Phase Lock Loop
for timing alignments, a number of drivers that buffer the control, and
address signals from the memory controller on the motherboard.
( Number of pins: DDR2 = 240, DDR = 184, SDR = 168)
Small Outline DIMM (SO-DIMM)
An enhanced version of a standard DIMM. A 72-pin small outline DIMM is
about half the length of a 72-pin SIMM.
(Number of pins: DDR / DDR2 = 200, SDR = 144)
Fully Buffered DIMM (FBDIMM)
For server applications where lots of DRAM components are required, a new
solution complementing the registered DIMM modules for data rates of 533 Mbits/s
and above becomes necessary. FBDIMM is a new memory interconnect
technology standard for high-end memory connections. FBDIMM transitions
the memory channel to a point-to-point interface, replaces the on-DIMM PLL,
and registers with a memory buffer chip.
MicroDIMM
Small form factor SO-DIMMs.
( Number of pins: DDR2 = 214)
Mini-DIMMs for DDR2
Small form factor registered DIMMs.
( Number of pins: DDR2 = 244)
D E P E N D I N G O N T H E I R main application, the memory industry differentiates between Unbuffered DIMM,
Registered DIMM, Fully Buffered DIMM (FBDIMM), Small Outline DIMM (SO-DIMM), MicroDIMM, and Mini-DIMM.
Typically used in
Desktop PC systems
Low-end servers
Workstations
High-end servers
High-end workstations
Space-constrained applications
Laptops, mobile workstations
ECC SO-DIMMs in networking
applications (routers)
High-speed and high-density
applications
High-end servers and
workstations
Sub-notebooks
Mini PCs
Blade servers
Mobile workstations
Routers ( Mini-ECC-DIMM)
T
O
D
A
Y
T
O
M
O
R
R
O
W
4
I n d u s t r i a l T r e n d s
A S A P R O V I D E R of a wide spectrum of memory components and
storage modules, Infineon offers the pertinent products for density and
speed-intensive applications from its wide range of modules. In addition
there is a trend towards smaller sized modules since applications are
becoming more transportable and, thus, smaller as well.
Smaller-sized modules
SO-DIMMs
Module size required for notebooks
MicroDIMMs
Small SO-DIMMs for sub-notebooks
1U Registered DIMMs
Reduced-height registered DIMMs
for blade servers
Mini-DIMMs
Small registered DIMMs for
blade servers, workstations,
and routers
High-density modules
FBGA-based DIMMs as planar design,
e.g. DDR2 2 GB registered /
1 GB SO-DIMM
Stacked-die FBGA technology for
high-end applications,
e.g. DDR2 4 GB registered DIMM
High-speed modules
DDR: PC2700/3200
DDR2: PC2 3200/4200/5300
DDR2: Fully Buffered DIMM
PC2 4200 and above
DDR2 MicroDIMM, 512 MB, 512 Mbit based,
FBGA package
5
Bandwidth roadmap
P r o d u c t T r e n d s
20
10
8
6
4
2
1
0.8
0
1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Year of market introduction
C
h
a
n
n
e
l

b
a
n
d
w
i
d
t
h

[
G
B
p
s
]
PC
100
PC
133
DDR
200
DDR
266
DDR
333
DDR
400
DDR2
533
DDR2
667
DDR2/3
800
DDR3
1066
DDR3
1333
DDR3
1600
Single channel DIMM
Expected I/O transition
1
0.8
0.6
0.4
0.2
0
Q1/04 Q2/04 Q3/04 Q4/04 Q1/05 Q2/05 Q3/05 Q4/05
DDR2
DDR
SDRAM
(Source: Infineon Technologies)
DDR mainstream in 2004
Applications Modules Typical products
Desktops Unbuffered DIMMs DDR400
Servers, workstations
Registered DIMMs DDR333
ECC unbuffered DIMMs DDR400
Notebooks SO-DIMMs
DDR400
DDR333
DDR mainstream in 2005
Applications Modules Typical products
Desktops Unbuffered DIMMs DDR2-533
Servers, workstations
Registered DIMMs DDR2-400
ECC unbuffered DIMMs DDR2-533
Notebooks
SO-DIMMs
DDR2-400/533
MicroDIMMs
(Source: Infineon Technologies)
6
D D R 2
T H E N E X T G E N E R A T I O N of synchronous DRAMs is called DDR2 and
is a natural extension of the existing DDR standard. DDR2 has been introduced
at operation frequencies of 200 MHz (DDR2-400) and will be extended to 266 MHz
(DDR2-533), 333 MHz (DDR2-667) for main memory, and even 400 MHz (DDR2-800)
for special applications. DRAM densities start at the 512 Mbit level as the main
volume, followed by 256 Mbit and 1 Gbit for high-end server applications. This
DRAM architecture change enables twice the bandwidth without increasing the
demand on a new DRAM core while keeping power low. Key drivers for the
technology switch to DDR2 are the demand for higher speeds and for DDR2 being
an open standard. Infineon recently introduced the first DDR2 chips with 512 Mb
capacity and is well positioned to supply the rapidly growing market with
cost-efficient products based on a qualified 110 nm process.
DDR2 module, 2 GB, 512 Mbit based,
FBGA package
7
Key benefits of DDR2 are
the higher bandwidths,
lower power consumption, and
the better system margins at higher speeds in servers.
Power supply
F O L L OWI N G T H E I N D U S T R I A L trend the DDR2-DRAM supply
voltage has been reduced from 2.5 V to 1.8 V for core and data in/outputs.
Power-Down
D D R 2 A D D S M O R E power-saving options. When no read or write
access is in progress with a row open, the DRAM can be brought into Active
Power-Down Mode. In addition to the standard Active Power-Down Mode,
already available on DDR components, a new Low Power Active Power-Down
Mode can be activated by the Mode Register for additional power savings.
ODT On-Die Termination
O N D D R - B A S E D S Y S T E M S the termination of the signal lines
is done externally on the motherboard. DDR2 offers the option of terminating
signals in the DRAM itself, by adding one additional input pin to turn
termination on or off. This feature drastically reduces wave reflections
and enhances overall system margins. A strong or weak termination
depending on the application requirements can be programmed within
the Extended Mode Register.
Data strobes
D D R 2 O F F E R S T H E O P T I O N for differential data strobing to
enhance signal margins. There is even the option to have different data
strobes for reads and writes. All these new features can be selected by
programming the Extended Mode Register during power-on.
Package
A L L D D R 2 P R O D U C T S are produced in FBGA packages.
8
Unbuffered DIMM
Density
Infineon offers unbuffered modules
with densities of 256 MB, 512 MB,
1 GB, and 2 GB.
Speed
The modules are available in the
speeds PC2-3200 and PC2-4200,
followed by PC2-5300.
Registered DIMM
Density
Infineon offers registered modules
with densities of 256 MB, 512 MB,
1 GB, 2 GB, and 4 GB.
Speed
The standard modules are available
in the speeds PC2-3200.
WI T H T H E E V E R - I N C R E A S I N G operation frequency the number of DIMM modules on a memory channel
with the current parallel stub-bus interface has hit saturation point. For server applications where lots of DRAM
components are required, a new solution replacing the registered DIMM modules for data rates of 533 Mbits/s and
above becomes necessary.
D D R 2
2004 2005
2004 2005
2 GB
1 GB
512 MB
256 MB
4 GB
2 GB
1 GB
512 MB
256 MB
Registered DIMM
FBD
Registered DIMM
FBD
Registered DIMM
FBD
Registered DIMM
FBD
Density
Density
DDR2 SO-DIMM, 1 Gbit, 512 Mbit
based, FBGA package
Unbuffered DIMM
Unbuffered DIMM
Unbuffered DIMM
Unbuffered DIMM
Registered DIMM
Transitions the memory channel to a serial interface
Replaces the on-DIMM PLL and registers
Specification under development by JEDEC
FBDIMM requires high-speed chip design and DRAM expertise
New memory interconnect technology standard for high-end
memory connections
Fully Buffered DIMM (FBDIMM)
9
SO-DIMM
Density
Infineon offers SO-DIMM modules
with densities of 256 MB, 512 MB,
1 GB, and 2 GB.
Speed
The modules are available in
the speeds PC2-3200, PC2-4200,
and PC2-5300.
MicroDIMM
Density
Infineon plans to offer MicroDIMM
modules with densities of 256 MB,
512 MB, and 1 GB.
Speed
The modules are available in the
speeds PC2-3200 and PC2-4200.
More detailed information on www.infineon.com/memory
2004 2005
2004 2005
New Modules with DDR2
Mini-DIMMs for DDR2 (244-pin)
Small form factor registered DIMMs.
Typically used in
Blade servers
Mobile workstations
Routers
Ultra-high density DIMMs for DDR2
Infineon plans to offer 4 GB registered DIMM as tall versions.
Typically used in
High-end server
Storage applications
2 GB
1 GB
512 MB
256 MB
Density
1 GB
512 MB
256 MB
Density
SO-DIMM
SO-DIMM
SO-DIMM
SO-DIMM
MicroDIMM
MicroDIMM
MicroDIMM
10
D D R
D D R S D R A M S (synchronous DRAMs) increase speed by
reading data on both the rising edge and the falling edge of the clock
pulse, essentially doubling the peak data bandwidth without increasing
clock frequency. DDRs low latencies and high bandwidth make it interesting
for the customer.
T O M E E T T H E M A R K E T needs, Infineon offers a wide range
of DDR DIMMs.
Key benefits
Compact structure
High performance
Low power consumption
Package
TSOP and FBGA packages are provided.
DDR module, 2 GB, 512 Mbit based,
FBGA package
DDR high-density DIMMs
2 GB registered DIMM
1 GB SO-DIMM
DDR high-speed DIMMs
DDR400 available in unbuffered,
registered, and SO-DIMM version
FBGA package
DDR333 registered DIMMs -1 GB
DDR333 SO-DIMMs -512 MB, -1 GB
Module Highlights
11
Unbuffered DIMM
Density
Infineon offers unbuffered modules
with densities of 128 MB, 256 MB,
512 MB, and 1 GB.
Speed
The modules are available in the
speeds PC 2700 and PC 3200.
Registered DIMM
Density
Infineon offers registered modules
with densities of 256 MB, 512 MB,
1 GB, and 2 GB.
Speed
The modules are available in
the speeds PC 2100, PC 2700,
and PC 3200.
SO-DIMM
Density
Infineon offers SO-DIMM modules
with densities of 128 MB, 256 MB,
512 MB, and 1 GB.
Speed
The modules are available in
the speeds PC 2700 and PC 3200.
2004 2005
2004 2005
More detailed information on www.infineon.com/memory
1 GB
512 MB
256 MB
128 MB
Density
2004 2005
1 GB
512 MB
256 MB
128 MB
Density
2 GB
1 GB
512 MB
256 MB
128 MB
TSOP package
FBGA package
TSOP package
FBGA package
TSOP package
FBGA package
TSOP package
FBGA package
Density
Unbuffered DIMM
Unbuffered DIMM
Unbuffered DIMM
Unbuffered DIMM
SO-DIMM
SO-DIMM
SO-DIMM
SO-DIMM
TSOP package


12
C h i p - S i z e P a c k a g e
F B G A B a s e d Mo d u l e s
I N F I N E O N H A S D E V E L O P E D an inhouse technology for CSP. Its
name is FBGA BSP (Fine-pitch Ball Grid Array Backside Protection) in BOC
(Board on Chip) technology. Traditional wire bonding is used for the electrical
connection. The BSP prevents a bare silicon backside which enables easier
handling and better protection. The rigid substrate, together with BSP, allows
package sizes to be clustered. As a result, die shrinks do not necessarily need
a smaller package, and dies can be smaller than the ball-out an important
feature due to standardized ball-out.
C O M P A R E D T O T O D A Y S T S O P package type, which is standard
for SDR and DDR DRAMs, the new package type offers superior electrical
and thermal performance, and also lower package volume and weight. The
lower electrical parasitic values allow for faster memory speed which is a
prerequisite for e.g. DDR2. Infineons inhouse FBGA technology fully supports
DDR2 requirements. For SDRAM, DDR, and DDR2 Infineon uses chip-size
packages to achieve high-density modules. In addition, the small form factor
of the chip-size packages supports the miniaturization of handhelds.
DDR2
DDR
2004
Roadmap packages:
2005
FBGA
FBGA
TSOP
This technology is being applied to
the following modules:
512 MB SDR SO-DIMMs
256 MB 1 GB DDR
registered, reduced-height DIMMs
512 MB 1 GB DDR SO-DIMMs
All DDR2 modules
Footprint reduction:
256 M FBGA compared to TSOP
Space reduced more than 63%
Double density on same form factor
FBGA:
TSOP:
FBGA TSOP
13
S t a c k e d D i e F B G A
H i g h P e r f o r m a n c e Me m o r y
T O A C H I E V E T H E H I G H E S T M E M O R Y density per module,
Infineon has developed a dual-die FBGA. This technology provides two
identical memory dies inside one FBGA. Technology and design guarantee
high electrical and thermal performance of device and module, due to nearly
identical characteristics of the interconnect technology for both chips. The
resulting package height is less than 1.35 mm and fits all DIMM height
standards. The package ballout (or pinout) is fully compatible to the
standards defined in JEDEC. Thanks to Infineons small chip sizes, the
dual-die chip-size package has a very competing footprint, just a bit wider
than the regular single-die package.
I N S U M M A R Y, this innovative form of stacking provides unprecedented
memory density per board area, and offers at the same time superior electrical
and thermal properties of the resulting memory component.
Advantages
Same interconnect technology of
upper and lower chip
Therefore both chips will have
similar electrical parameters
Package thickness of 1.35 mm
max. fits to all DIMM height
standards, covers even SO-DIMM
The following modules are
built up on this technology:
2 GB DDR2 SO-DIMMs
4 GB DDR2 registered DIMMs
Schematic view of stacked die:
A
E
F
G
H
J
K
L
M
N
P
R
W
V
DD
NU/
/RDQS
V
SS
V
SSQ /DQS V
DDQ
DQ
6
V
SSQ
DM/
RDQS
DQS V
SSQ
DQ
7
V
DDQ
DQ
1
V
DDQ
V
DDQ
DQ
0
V
DDQ
DQ
4
V
SSQ
DQ
3
DQ
2
V
SSQ
DQ
5
V
DDL
V
REF
V
SS
V
SSDL CK V
DD
CKE0 /WE /RAS /CK ODT0
BA2 BA0 BA1 /CAS /CSo /CS1
CKE1 A10 A1 A2 A0 V
DD
V
SS
A3 A5 A4 ODT1 A6
A7 A9 A11 A8 V
SS
V
DD
NC NC NC NC
NC NC NC NC
A12 A14 A13 A15
3 depop
rows
A
B
C
D
E
F
G
H
J
K
L
1 2 3 4 5 6 7 8 9
Ballout for 512 M
Ballout for 1 G
Ball pitch: 0.8 x 0.8 mm
DDR2 SD-FBGA ballout for 512M/ 1G
Support balls
Common balls for both chips
Chip select chip 2
Chip select chip 1
Upper chip Lower chip
Substrate
Solder balls
14
G R E E N Me m o r y P r o d u c t s
Playing a pioneering role in setting new standards
Eliminating lead in packages
Reducing harmful substances
Simplifying recycling
I N F I N E O N WA S O N E of the first semiconductor manufacturers in
the world to announce the availability of green DRAM components. Infineon
is currently pursuing a two-step strategy to introduce products with lower
environmental impact. In step one, lead and halogens (components) and
lead (PCBs) have been eliminated in 2003. In step two, halogens (PCBs) will
also be substituted in 2005. Levels of other potentially hazardous chemical
substances such as cadmium, hexavalent chrome, antimony oxide, etc., will
also be dramatically reduced.
Components
T H E M A J O R I T Y O F I N F I N E O N memory components based on the
110 nm process are lead-free and halogen-free.
TSOP packaged DDR (256 M/ 512 M) components
FBGA packaged DDR available on request
FBGA packaged DDR2 available
Modules
L E A D - F R E E M O D U L E S
based on green 256 Mb DDR
components are already available;
DDR modules with higher-density
components (512 M) will follow.
DDR2 modules only with green
available.
Infineon schedule for Green transition
Development
Qualification package / product
PCN (product change notification to market)
Production
January January January
2003 2004 2005
15
On our Internet websites:
www.infineon.com/memory
C Datasheets
C Simulation models
C Memory Spectrum (PDF version)
C Brochures (PDF version)
More Detailed Information on Memory
Products is Available:
Edition 2004 June
Published by
Infineon Technologies AG,
St.-Martin-Strae 53,
D-81669 Mnchen
Infineon Technologies AG 2004.
All Rights Reserved.
Please note
The information in this document is subject to change
without notice. The information herein describes certain
components and shall not be considered as a guarantee
of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but
not limited to warranties of non-infringement regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices, please contact your nearest
Infineon Technologies office in Germany or our Infineon
Technologies representatives worldwide.
(www.infineon.com).
Warnings
Due to technical requirements, components may contain
dangerous substances. For information on the types
in question, please contact your nearest Infineon
Technologies office.
Infineon Technologies components may only be used in
life-support devices or systems with the express written
approval of Infineon Technologies if a failure of such
components can reasonably be expected to cause the
failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system.
Life-support devices or systems are intended to be
implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they
fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
16
Ordering No. B166-H8412-X-X-7600
Printed in Germany
WS 06045. Z
&
P
2
0
0
3
1
7
1
www.infineon.com
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T (+1) 5 12-3 41 71 27
Fax (+1) 5 12-3 41 99 26
Infineon Technologies
North America Corp.
8203 Willow Place South, Suite 660
Houston, TX 77070
T (+1) 2 81-7 74 05 55
Fax (+1) 2 81-7 74 05 61
U.S.A.

USA
Infineon Technologies
North America Corp.
2529 Commerce Drive, Suite H
Kokomo, IN 46902
T (+1) 7 65- 4 56 19 28
Fax (+1) 7 65- 4 56 38 36
Infineon Technologies
North America Corp.
21800 Haggerty Road, Suite 112
Northville, MI 48167
T (+1) 2 48-3 74 08 90
Fax (+1) 2 48-3 74 25 01
Infineon Technologies
North America Corp.
3000 CentreGreen Way
Raleigh, NC 27513
T (+1) 9 19-6 77 27 00
Fax (+1) 9 19-6 78 19 34
Infineon Technologies
North America Corp.
6170 Cornerstone Ct East, Suite 240
San Diego, CA 92121-3766
T (+1) 8 58-5 26 22 01
Fax (+1) 8 58-5 26 22 02
Infineon Technologies
North America Corp.
1730 North First Street
San Jos, CA 95112
T (+1) 4 08- 5 01 60 00
Fax (+1) 4 08- 5 01 24 24
Infineon Technologies
North America Corp.
1901 N. Roselle Rd., Suite 1020
Schaumburg, IL 60195
T (+1) 8 47- 8 84 70 09
Fax (+1) 8 47- 8 84 75 99
Israel

IL
Nisko Ltd.
2A, Habarzel Street
Tel Aviv 69710
T (+9 72) 3-7 65 73 00
Fax (+9 72) 3-7 65 73 33
Italy

I
Infineon Technologies Italia S.r.l.
Via Vipiteno 4
20128 Milano
T (+39) 02- 2 52 04 1
Fax (+39) 02- 2 52 04 43 95
Japan

J
Infineon Technologies Japan K.K.
Takanawa Park Tower 8F/9F/10F/12F/17F
3-20-14, Higashi-Gotanda,
Shinagawa-ku,
Tokyo 141-0022
T (+81) 3-54 49 64 11
Fax (+81) 3-54 49 64 01
Korea

ROK
Infineon Technologies Korea Co., Ltd.
9th floor, Daelim Acrotel Building
467-6 Dogok-Dong, Kangname-Gu
Seoul, Korea 135-971
T (+82) 2-34 60 09 00
Fax (+82) 2-34 60 09 01 /9 02
Malaysia

MAL
Infineon Technologies
Malaysia SDN BHD
Krystal Point II
1-4-11/12, Lebuh Bukit Kecil 6
11900 Bayan Lepas
Penang. Malaysia
T (+60) 4-6 44 77 66
Fax (+60) 4-6 41 48 72
Poland

PL
Siemens Sp. z.o.o.
Ul. Zupnicza 11
03-821 Warszawa
T (+48) 22- 8 70 91 50
Fax (+48) 22- 8 70 91 59
Portugal

P
Infineon Technologies F.S.
Portugal, S.A.
Avenida 1 de Mayo, 801
Mindela
4485-629 Villa do Conde
T (+3 51) 2 52-24 60 00
Russia

RUS
INTECH electronics
Ul. Smolnaja 24a/1203
125 445 Moscow
T (+7) 0 95- 4 51 97 37
Fax (+7) 0 95- 4 55 97 03
Singapore

SGP
Infineon Technologies Asia
Pacific Pte. Ltd.
25 New Industrial Road
KHL Building
Singapore 536 211
T (+65) 68-40 07 32
Fax (+65) 68-40 00 77