2SA1941
2006-11-09  1
  TOSHIBA Transistor    Silicon PNP Triple Diffused Type 
2SA1941 
 
Power Amplifier Applications 
 
 
 
  High breakdown voltage: V
CEO
 = 140 V (min) 
  Complementary to 2SC5198 
  Recommended for 70-W high-fidelity audio frequency amplifier 
output stage. 
 
Absolute Maximum Ratings (Tc = 25C) 
Characteristics  Symbol  Rating  Unit 
Collector-base voltage  V
CBO 
140  V 
Collector-emitter voltage  V
CEO 
140  V 
Emitter-base voltage  V
EBO 
5  V 
Collector current  I
C 
10  A 
Base current  I
B 
1  A 
Collector power dissipation   
(Tc = 25C) 
P
C 
100  W 
Junction temperature  T
j 
150  C 
Storage temperature range  T
stg 
55 to 150  C 
Note:  Using continuously under heavy loads (e.g. the application of high 
temperature/current/voltage and the significant change in 
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating 
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. 
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook 
(Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report 
and estimated failure rate, etc). 
 
 
Unit: mm
 
 
JEDEC   
JEITA   
TOSHIBA  2-16C1A 
Weight: 4.7 g (typ.) 
2SA1941 
2006-11-09  2
Electrical Characteristics (Tc = 25C) 
Characteristics  Symbol  Test Condition  Min  Typ.  Max Unit
Collector cut-off current  I
CBO
  V
CB
 = 140 V, I
E
 = 0      5.0   A 
Emitter cut-off current  I
EBO
  V
EB
 = 5 V, I
C
 = 0      5.0   A 
Collector-emitter breakdown voltage  V 
(BR) CEO
I
C
 = 50 mA, I
B
 = 0  140      V 
h
FE (1) 
(Note)
V
CE
 = 5 V, I
C
 = 1 A  55    160
DC current gain 
h
FE (2)
  V
CE
 = 5 V, I
C
 = 5 A  35  83   
 
Collector-emitter saturation voltage  V
CE (sat) 
I
C
 = 7 A, I
B
 = 0.7 A    0.8  2.0 V 
Base-emitter voltage  V
BE
  V
CE
 = 5 V, I
C
 = 5 A    1.0  1.5 V 
Transition frequency  f
T
  V
CE
 = 5 V, I
C
 = 1 A    30    MHz
Collector output capacitance  C
ob
  V
CB
 = 10 V, I
E
 = 0, f = 1 MHz    320    pF 
Note:  h
FE (1)
 classification    R: 55 to 110, O: 80 to 160 
 
Marking 
 
 
A1941 
TOSHIBA 
Lot No. 
Characteristics 
indicator 
A line indicates   
lead (Pb)-free package or 
lead (Pb)-free finish. 
Part No. (or abbreviation code)
2SA1941 
2006-11-09  3
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
Collector current    I
C
    (A) 
 
C
o
l
l
e
c
t
o
r
-
e
m
i
t
t
e
r
 
s
a
t
u
r
a
t
i
o
n
 
v
o
l
t
a
g
e
 
V
C
E
 
(
s
a
t
)
 
 
(
V
)
 
 
V
CE (sat)
  I
C
 
 
 
Collector-emitter voltage    V
CE
    (V) 
 
 
I
C
  V
CE
 
 
C
o
l
l
e
c
t
o
r
 
c
u
r
r
e
n
t
 
 
I
C
 
 
(
A
)
 
 
I
C
  V
BE
 
 
 
Collector current    I
C
    (A) 
 
 
h
FE
  I
C
 
 
D
C
 
c
u
r
r
e
n
t
 
g
a
i
n
 
 
h
F
E
 
 
 
Base-emitter voltage    V
BE
    (V) 
 
 
C
o
l
l
e
c
t
o
r
 
c
u
r
r
e
n
t
 
 
I
C
 
 
(
A
)
 
 
 
 
  
 
 
 
 
Collector-emitter voltage    V
CE
    (V) 
 
C
o
l
l
e
c
t
o
r
 
c
u
r
r
e
n
t
 
 
I
C
 
 
(
A
)
 
 
Safe Operating Area 
10 
 
6 
4 
2 
0 
I
B
 = 10 mA
20
Common emitter 
Tc = 25C 
8 
4  6  8  2  0  10 
30
40
50
100 
150 
200  250 
0.8   1.2  1.6  2.0
10
 
6
4
2
0
Common emitter 
V
CE
 = 5 V 
8
0.4 0 
Tc = 100C
25C 
25C 
 
100
10
0.1   1 
1
Common emitter
V
CE
 = 5 V 
0.01
1000
10 
Tc = 100C
Tc = 25C
Tc = 25C
10 
1 
0.1 
0.01 
0.01 
Tc = 100C
Tc = 25C 
Tc = 25C 
 
0.1  1  10 
Common emitter
I
C
/I
B
 = 10 
100
50 
0.05 
2 
 
30 
1 
10  30  100  300 
0.5 
1000
3 
5 
10 
*:  Single nonrepetitive   
  pulse    Tc = 25C 
Curves must be derated 
linearly with increase in 
temperature. 
I
C
 max (continuous) 
I
C
 max (pulsed)* 
V
CEO
 max 
DC operation 
Tc = 25C 
1 ms* 
10 ms* 
100 ms* 
0.3 
0.1 
3 
2SA1941 
2006-11-09  4
 
 
RESTRICTIONS ON PRODUCT USE 
20070701-EN
  The information contained herein is subject to change without notice. 
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