2SD2449
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD2449
Power Amplifier Applications
Unit: mm
• High breakdown voltage: VCEO = 160 V (min)
• Complementary to 2SB1594
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 160 V
Collector-emitter voltage VCEO 160 V
Emitter-base voltage VEBO 5 V
Collector current IC 10 A
Base current IB 1 A
Collector power dissipation
PC 150 W
(Tc = 25°C)
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C JEDEC ―
JEITA ―
Equivalent Circuit TOSHIBA 2-21F1A
Weight: 9.75 g (typ.)
COLLECTOR
BASE
≈ 10 Ω EMITTER
1 2003-02-04
2SD2449
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 160 V, IE = 0 ― ― 5 µA
Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 5 µA
Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 160 ― ― V
hFE (1)
VCE = 5 V, IC = 8 A 3000 ― 20000
DC current gain (Note)
hFE (2) VCE = 5 V, IC = 12 A 2000 ― ―
Collector-emitter saturation voltage VCE (sat) IC = 8 A, IB = 8 mA ― ― 3.0 V
Base-emitter voltage VBE VCE = 5 V, IC = 8 A ― ― 3.0 V
Transition frequency fT VCE = 5 V, IC = 1 A ― 30 ― MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 150 ― pF
Note: hFE (1) classification A: 3000 to 10000, B: 5000 to 15000, C: 7000 to 20000
Marking
TOSHIBA
2SD2449 Product No.
Lot No.
JAPAN
hFE classification (A/B/C)
Explanation of Lot No.
Month of manufacture (January to December are denoted by letters A to L respectively.)
Year of manufacture (Last decimal digit of the year of manufacture)
2 2003-02-04
2SD2449
IC – VCE IC – VBE
10 10
Common emitter 500 450 Common emitter
Tc = 25°C VCE = 5 V
400
8 8
350
(A)
(A)
300
IC
IC
6 250 6
Collector current
Collector current
−25
200
4 4 Tc = 100°C
25
150
2 2
IB = 100 µA
0 0
0 2 4 6 8 10 0 1 2 3 4 5
Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V)
hFE – IC VCE (sat) – IC
30000 10
Common emitter Common emitter
Collector-emitter saturation voltage
VCE = 5 V 5 IC/IB = 250
10000
3
hFE
5000
VCE (sat) (V)
3000
Tc = 100°C
DC current gain
−25
25 1 25
1000
0.5
500 Tc = 100°C
−25
300 0.3
100
0.1
0.03 0.05 0.1 0.3 0.5 1 3 5 10
50
0.03 0.1 0.3 1 3 10 30 50
Collector current IC (A)
Collector current IC (A)
Safe Operating Area
30
1 ms*
IC max (pulsed)*
PC – Ta 10 10 ms*
160 IC max (continuous)
Tc = Ta 5
(A)
(W)
Infinite heat sink DC operation
3 Tc = 25°C
IC
Collector power dissipation PC
120
100 ms*
Collector current
80
0.5
0.3
*: Single nonrepetitive pulse
40 Tc = 25°C
Curves must be derated
0.1 linearly with increase in VCEO
temperature. max
0 0.05
0 40 80 120 160 200 2 3 10 30 50 100 300 500
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V)
3 2003-02-04
2SD2449
RESTRICTIONS ON PRODUCT USE 000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
4 2003-02-04
