2SA1244

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1244
High Current Switching Applications
Unit: mm

• Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A)

• High speed switching time: tstg = 1.0 µs (typ.)
• Complementary to 2SC3074

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO −60 V

Collector-emitter voltage VCEO −50 V
Emitter-base voltage VEBO −5 V
Collector current IC −5 A
Base current IB −1 A

Collector power Ta = 25°C 1.0

PC W
dissipation Tc = 25°C 20
Junction temperature Tj 150 °C JEDEC ―
Storage temperature range Tstg −55 to 150 °C JEITA ―
TOSHIBA 2-7B1A

Weight: 0.36 g (typ.)

JEDEC ―
JEITA ―
TOSHIBA 2-7J1A

Weight: 0.36 g (typ.)

1 2002-07-23
 2SA1244
Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = −50 V, IE = 0 ― ― −1 µA

Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −1 µA
Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −50 ― ― V
hFE (1)
VCE = −1 V, IC = −1 A 70 ― 240
DC current gain (Note)
hFE (2) VCE = −1 V, IC = −3 A 30 ― ―
Collector-emitter saturation voltage VCE (sat) IC = −3 A, IB = −0.15 A ― −0.2 −0.4 V
Base-emitter saturation voltage VBE (sat) IC = −3 A, IB = −0.15 A ― −0.9 −1.2 V
Transition frequency fT VCE = −4 V, IC = −1 A ― 60 ― MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 170 ― pF

Turn-on time ton OUTPUT ― 0.1 ―

IB2
20 µs INPUT

10 Ω
IB2
Switching time Storage time tstg IB1 ― 1.0 ― µs
IB1

VCC = −30 V

Fall time tf −IB1 = IB2 = 0.15 A, ― 0.1 ―

DUTY CYCLE ≤ 1%

Note: hFE (1) classification O: 70 to 140, Y: 120 to 240

Marking

A1244 Product No.

Lot No.

hFE Classification

Explanation of Lot No.

Month of manufacture: January to December are denoted by letters A to L respectively.

Year of manufacture: last decimal digit of the year of manufacture

2 2002-07-23
 2SA1244

IC – VCE VCE – IC
−8 −1.0

Common emitter Common emitter

(V)
−80 Tc = 25°C
Tc = 25°C IB = −60 mA
−0.8
−70
(A)

Collector-emitter voltage VCE

−6 −10 −30 −100 −150

−60 −200
IC

−50 −0.6 −300

Collector current

−4 −350
−40
−0.4
−30 −400
−500
−2 −20
−0.2
IB = −10 mA

0 0
0 −2 −4 −6 −8 0 −1 −2 −3 −4 −5 −6 −7

Collector-emitter voltage VCE (V) Collector current IC (A)

VCE – IC VCE – IC
−1.0 −1.0
Common emitter Common emitter
(V)

(V)

Tc = 100°C Tc = −55°C
IB = −60 mA IB = −60 mA
−0.8 −0.8
−150
Collector-emitter voltage VCE

Collector-emitter voltage VCE

−20 −40 −100 −20 −40 −80 −150

−200 −200
−250
−0.6 −300 −0.6 −100
−350
−400
−300
−0.4 −500 −0.4
−400

−500
−0.2 −0.2

0 0
0 −1 −2 −3 −4 −5 −6 −7 0 −1 −2 −3 −4 −5 −6 −7

Collector current IC (A) Collector current IC (A)

VCE (sat) – IC
hFE – IC −2
Collector-emitter saturation voltage

1000 Common emitter

Common emitter IC/IB = 20
−1
500 VCE = −1 V
hFE

−0.5
VCE (sat) (V)

300
DC current gain

Tc = 100°C −0.3

100
25 Tc = 100°C
−0.1
50 −55
−0.05 25
−55
20 −0.03
−0.03 −0.1 −0.3 −1 −3 −10 −0.03 −0.1 −0.3 −1 −3 −10

Collector current IC (A) Collector current IC (A)

3 2002-07-23
 2SA1244

VBE (sat) – IC IC – VBE

−10

Common emitter −5 Common emitter

Base-emitter saturation voltage

−5
IC/IB = 20 VCE = −1 V
−3

(A)
−4
VBE (sat) (V)

IC
Tc = −55°C
−1

Collector current
−3
Tc = 100°C
−0.5 25
25 −2 −55
−0.3 100

−1
−0.1
−0.03 −0.1 −0.3 −1 −3 −10
0
Collector current IC (A) 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4

Base-emitter voltage VBE (V)

Safe Operating Area PC – Ta

−10 28
IC max (pulsed)* 1 ms* (1) Tc = Ta infinite heat sink
−5
Collector power dissipation PC (W)

(2) Ceramic substrate

IC max (continuous) 24
−3 10 ms* 50 × 50 × 0.8 mm
DC operation Tc = 25°C (1) (3) No heat sink
20
(A)

−1
IC

16
−0.5
Collector current

−0.3 12

8
−0.1
*: Single nonrepetitive pulse
−0.05 4 (2)
Tc = 25°C
−0.03 (3)
Curves must be derated linearly VCEO max
0
with increase in temperature. 0 20 40 60 80 100 120 140 160
−0.01
−0.1 −0.3 −1 −3 −10 −30 −100 Ambient temperature Ta (°C)

Collector-emitter voltage VCE (V)

4 2002-07-23
 2SA1244

RESTRICTIONS ON PRODUCT USE 000707EAA

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

• The information contained herein is subject to change without notice.

5 2002-07-23