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Rajalkshmi Engineering College

This document outlines the aims, topics, and schedule for an undergraduate course on RF and Microwave Engineering. The aim is to familiarize students with active and passive microwave devices and components used in communication systems. Topics include passive microwave components and their parameters, transistor amplifier design and matching networks, microwave semiconductor devices and applications, and microwave sources and amplifiers. The schedule details the topics to be covered in each class, including low and high frequency parameters, reciprocal and lossless networks, amplifier power relations, stability considerations, and gain and noise figure. Later topics cover microwave frequency range applications, scattering matrix concepts, microwave hybrid circuits, ferrites and their applications, and microwave transistors, diodes and integrated circuits. Measurement techniques are also addressed

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Sasi Rekha
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53 views3 pages

Rajalkshmi Engineering College

This document outlines the aims, topics, and schedule for an undergraduate course on RF and Microwave Engineering. The aim is to familiarize students with active and passive microwave devices and components used in communication systems. Topics include passive microwave components and their parameters, transistor amplifier design and matching networks, microwave semiconductor devices and applications, and microwave sources and amplifiers. The schedule details the topics to be covered in each class, including low and high frequency parameters, reciprocal and lossless networks, amplifier power relations, stability considerations, and gain and noise figure. Later topics cover microwave frequency range applications, scattering matrix concepts, microwave hybrid circuits, ferrites and their applications, and microwave transistors, diodes and integrated circuits. Measurement techniques are also addressed

Uploaded by

Sasi Rekha
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as RTF, PDF, TXT or read online on Scribd
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RAJALKSHMI ENGINEERING COLLEGE

THANDALAM
DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
SUBJECT IN-CHARGE: M.Revathi YEAR SEC: I! "B#
SUBJECT CODE : EC$%&' SUBJECT: RF MICRO(A!E
ENGINEERING
AIM:
To enable the student to become familiar with active & passive microwave devices & components
used in Microwave communication systems
!"#$%TI&$':
To study passive microwave components and their '( )arameters
To study *+ transistor amplifier desi,n and matchin, networ-s
To study Microwave semiconductor devices & applications
To study Microwave sources and amplifiers
'N! .NIT Date )eriod T!)I%' T! "$ %!&$*$D T$/T
"!!0'
)A1$ N!
2
I
Low fre3uency parameters(
impedance 4admittance4 hybrid
and A"%D
T5 267(278
5 Hi,h fre3uency
parameters(+ormulation of '
parameters4 properties of '
parameters
T5 295(585
: *eciprocal and
lossless networ-s4 transmission
matri;4
N!T$'
< Introduction to component
basics4 wire4 resistor4 capacitor
and inductor4 applications of *+
T5 5<(<8
6
II
Amplifier power relation T5 <79(<98
= stability considerations T5 <9<(<97
7 ,ain considerations4 noise fi,ure T5 <>7(68>462=
9 impedance matchin, networ-s4
fre3uency response
T5 <58(<5>
> T and ? matchin, networ-s T5 <<8
28 microstripline matchin,
networ-s
T5 <<6(<6<
22
III
III
Microwave fre3uency ran,e4
si,nificance of microwave
fre3uency ran,e ( applications of
microwaves
T2 2(:
25 'catterin, matri; (%oncept of N
port scatterin, matri;
representation(
)roperties of ' matri;( ' matri;
formulation of two(port @unction
*5 2<:(2<>
2: Microwave Hybrid %ircuits4
Aave,uide Tees4 Ma,ic Tees
BHybrid TreesC
T2 2<=
2< Hybrid *in,s B*at(*ace
%ircuitsC4Aave,uide %orners4
"ends and Twists
T2 2<742<9
26 Directional %ouplers4 Two(Hole
Directional %ouplers
T2 2<>4262
2= +errites ( important microwave
properties and applications
N!T$'
27 Termination ( 1yrator N!T$'4 *5 2=:
29 %irculators and Isolators4 T2 26942=8
2> Attenuator ( )hase chan,er *5 2784275
58 ' Matri; for microwave
components
N!T$'
52 %ylindrical cavity resonators *5 5:6
55
I!
Microwave bipolar transistors4
operation ( characteristics and
application
T5 :5=(::7
5: microwave field effect
transistors4 operation (
characteristics and application
T5 :<:(:62
5< )rinciples of tunnel diodes (
&aractor and 'tep recovery
diodes
T2 2>9(58< T5
:2=(:2>
N!T$'
56 transferred electron devices ,unnT2 578(598
5= avalance transit time devices(
impatt diodes4 trapatt diodes
T2 :8>(:2:
T2 :2<(:2=
57 )arametric Devices4 )hysical
'tructures4 Nonlinear *eactance
and Manley D *owe )ower
*elations4 )arametric
Amplifiers4 Applications
T2 :58(::8
59 Microwave monolithic
inte,rated circuit BMMI%C (
Materials and fabrication
techni3ues
T2 682(68<
T2 <>7(688
5> 0lystrons4 *eentrant %avities4
&elocity(Modulation )rocess4
T2 :<2(:=8
!

!
"unchin, )rocess4 !utput )ower
and "eam Loadin,4 'tate of the
Art4
:8 Multicavity 0lystron Amplifiers T2 :=5(:75
:2 *efle; 0lystrons T2 :7:(:98
:5 Heli; Travelin,(Aave Tubes
BTATsC4
T2 :95(:>7
:: Ma,netron !scillators T2 <57(<<>
:< Measurement of power4 *5 <6>
:6 Measurement of wavelen,th4 *5 <79
:= Measurement of impedance4 *5 <7:
:7 Measurement 'A*4 attenuation4*5 <=<4<==
:9 Measurement of E and )hase
shift
*5 <984N!T$'
'i,nature of the faculty 'i,nature of the H!D

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