BC847BW
BC847CW
SMALL SIGNAL NPN TRANSISTORS
PRELIMINARY DATA
I SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
I MINIATURE SOT-323 PLASTIC PACKAGE
FOR  SURFACE MOUNTING CIRCUITS
I TAPE AND REEL PACKING
I BC847BW - THE PNP COMPLEMENTARY
TYPE IS BC857BW
APPLICATIONS                                                    
I WELL SUITABLE FOR PORTABLE
EQUIPMENT
I SMALL LOAD SWITCH TRANSISTORS
WITH HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERNAL  SCHEMATIC  DIAGRAM
June 2002 
SOT-323
Type Marking
BC847BW 1FW
BC847CW 1GW
ABSOLUTE  MAXIMUM  RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 50 V
VCEO Collector-Emitter Voltage (IB = 0) 45 V
VEBO Emitter-Base Voltage (IC = 0) 6 V
IC Collector Current 100 mA
ICM Collector Peak Current 200 mA
Ptot Total Dissipation at TC = 25 
o
C 200 mW
Tstg Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
1/4
THERMAL  DATA
Rthj -amb   Thermal  Resistance  Junction-Ambient                        Max 625
o
C/W
 Device mounted on a PCB area of 1 cm
2
.
ELECTRICAL  CHARACTERISTICS  (Tcase = 25 
o
C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0)
VCB = 30 V
VCB = 30 V              TC = 150 
o
C
15
5
nA
A
IEBO Emitter Cut-off Current
(IC = 0)
VEB = 5 V 100 nA
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC = 10 A 50 V
V(BR)CEO Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 2 mA 45 V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 10 A 6 V
VCE(sat) Collector-Emitter
Saturation Voltage
IC = 10 mA               IB = 0.5 mA
IC = 100 mA             IB = 5 mA
0.09
0.2
0.25
0.6
V
V
VBE(sat) Base-Emitter
Saturation Voltage
IC = 10 mA               IB = 0.5 mA
IC = 100 mA             IB = 5 mA
0.7
0.9
V
V
VBE(on) Base-Emitter On
Voltage
IC = 2 mA                VCE = 5 V
IC = 10 mA              VCE = 5 V
0.58 0.66 0.7
0.77
V
V
hFE DC Current Gain IC = 10 A              VCE = 5 V
for BC847BW
for BC847CW
IC = 2 mA               VCE = 5 V
for BC847BW
for BC847CW
200
420
150
270
290
520
450
800
f
T Transition Frequency IC = 10 mA  VCE = 5 V  f = 100MHz 100 MHz
CCBO Collector-Base
Capacitance
IE = 0       VCB = 10 V    f = 1 MHz 2.5 pF
NF Noise Figure VCE = 5 V   IC = 0.2 mA   f = 1KHz
f = 200 Hz   RG = 2 K
2 10 dB
 Pulsed: Pulse duration = 300 s, duty cycle  2 %
BC847BW / BC847CW
2/4
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.8 1.1 0.031 0.043
A1 0 0.1 0 0.003
b 0.25 0.4 0.009 0.015
c 0.1 0.26 0.004 0.010
D 1.8 2.0 2.2 0.070 0.078 0.086
E 1.15 1.25 1.35 0.045 0.049 0.053
e 0.65 0.025
H 1.8 2.1 2.4 0.070 0.082 0.094
L 0.1 0.2 0.3 0.004 0.007 0.011
Q 0 10
o
0 10
o
SOT-323 MECHANICAL DATA
FOOT PRINT SOT-323
BC847BW / BC847CW
3/4
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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BC847BW / BC847CW
4/4
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