from Europe
for the World
Application
Note
European Power-
Semiconductor and
Electronics Company
For further information contact:
eupec
Marketing Department Tel: +49 2902 764-0
Max Planck Str. 5 Fax: +49 2902-764-1256
D-59581 Warstein Internet:: http://www.eupec.com
AN_Stray_Inductance_Definition.doc
Definition of  the module stray inductance L
s
Fig.1 shows the principle circuit of a half-bridge and the resulting voltage and current wave-
forms when switching IGBT1. The circuit stray inductance L
, shown as a concentrated ele-
ment,  represents  all  distributed  inductances  (of  capacitors,  busbars  and  IGBT  modules)
within the commutation loop (striped area).
D1
IGBT1 turn-on
M
Vcc
-15V
IGBT2
C
IGBT1
L 
0
L
D2
0
V
IGBT2
D2
I
IGBT1
I
IGBT1 turn-off
0
V
IGBT1
V
GE
Fig.1: Half-bridge circuit with current and voltage waveforms when switching IGBT1
Due to the changing current a voltage drop of L
 * di
off
/dt occurs across the stray inductance
L
. It is overlayed to the DC link voltage V
CC
 and seen as a voltage spike across the turning-
off IGBT1. Permissible limits for turn-off current di/dt and overvoltage can be deduced  from
the RBSOA diagram of  the IGBT. This curve (see Fig.2) is valid when the measurement is
done through the CE auxiliary terminals. Also a derated curve is given in the data-sheet for
measurements  at  the  power  terminals,  taking  into  account  the  internal  module  stray  induc-
tance between main and auxiliary terminals of  the module. For dual modules, this diagrams
refers to the voltage across one of the both commutating IGBT switches.
For  calculations  the  value  for  the  internal  module  stray  inductance  L
s
  is  given  in  the  data-
sheets.  For  single  switch  modules,  this  value  is  the  before  mentioned  stray  inductance  be-
tween  main  and  auxiliary  terminal.  For  dual  modules  or  modules  containing  several  phase
legs, this value corresponds to the  application relevant effective commutation loop between
upper  and  lower  switch.  Due  to  the  construction  this  value  is  clearly  lower  than  the  sum  of
Application Note                                                                                                         page 2 of 3
For further information contact:
eupec
Marketing Department Tel: +49 2902 764-0
Max Planck Str. 5 Fax: +49 2902-764-256
D-59581 Warstein Internet:: http://www.eupec.com
AN_Stray_Inductance_Definition.doc
 V
dI
F
/dt
I
F
V
0
separately  determined  induc-
tances of upper plus lower arm.
In modules with more than one
phase  leg  always  the  worst
case  commutation  path  from
plus supply voltage through the
phase leg back to minus supply
voltage is considered.
The  measurement  is  performed,  while  the  diode  turns  off.  The  voltage  drop  happens  at  a
point  of  time,  where  the  di/dt  is  constant  and  the  diode  still
has  no  blocking  capability.  Therefore  the  voltage  drop  can
only  be  caused  by  the  module  stray  inductance.  No  other
effects have to be considered. The module stray inductance
is calculated according to L
s
 = V / di
F
/dt.
Dependent on the type designation, the data sheet value for
the stray inductance has to be interpreted in the following way:
Sicherer Arbeitsbereich IGBT (RBSOA)        
Reverse bias safe operating area IGBT (RBSOA)
0
600
1200
1800
2400
3000
0 500 1000 1500 2000 2500 3000 3500
V
CE
[V]
I
C
[
A
]
IC,Modul
IC,Chip
R
G,off
 = 1,2 , T
vj
= 125C                
Fig.2: RBSOA diagram for FZ1200R33KF2
DUT:
half -bridge
-15 V
-15 V
L
L
C
V
CC
V
DUT:
single switch
-15 V
L
L
C
V
CC
V
Fig.3: Measuring circuit
Application Note                                                                                                         page 3 of 3
For further information contact:
eupec
Marketing Department Tel: +49 2902 764-0
Max Planck Str. 5 Fax: +49 2902-764-256
D-59581 Warstein Internet:: http://www.eupec.com
AN_Stray_Inductance_Definition.doc
Single modules type FZ... or ...GA... and Tripacks:
The module stray inductance is measured between the C and E main terminals.
Dual modules type FF... (with exception of FF200R33KF):
These modules contain two independent switches. Given is the
stray inductance between the C and E main terminals of one switch.
Half-Bridges type ...GB... and FF200R33KF (modules with three main terminals):
The  given  data  sheet  value  covers  the  full
commutation  loop  between  upper  and  lower
switch,  including  the  inductance  between
upper C1 and lower E2 terminals.
4-packs type F4-...:
These modules contain two independent phase-legs. The given data sheet
value covers the full commutation loop between upper and lower switch
within one phase-leg, including the inductance between + and - terminals.
Six pack modules type FS...:
The given data sheet value covers the full commutation loop between up-
per  and  lower  switch  within  one  phase-leg,  including  the  inductance  be-
tween + and - terminals.
3-Phase full bridges or PIM type ...GD... or ...GP...:
The given data sheet value covers the full commutation loop
between upper and lower switch at the worst position within
 the module, containing the full inductance towards the P+
and N- terminals (terminals named 22 and 24 with PIM).