Preliminary
TSC5305D
High Voltage NPN Transistor with Diode
TO-263
Pin assignment:
1. Base
2. Collector
3. Emitter
BVCEO = 400V
BVCBO = 750V
Ic = 5A
VCE (SAT), = 1.2V @ Ic / Ib = 4A / 1A
Features
Ordering Information
Built-in free-wheeling diode makes efficient anti
Part No.
Packing
Package
saturation operation.
TSC5305DCZ
Tube
TO-220
No need to interest an hfe value because of low variable
TSC5305DCM
T&R
TO-263
storage-time spread even though comer spirit product.
Block Diagram
Low base drive requirement.
Suitable for half bridge light ballast applications.
Structure
Silicon triple diffused type.
NPN silicon transistor with Diode
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
750V
Collector-Emitter Voltage
VCEO
400V
Emitter-Base Voltage
VEBO
10
IC
Collector Current
DC
Pulse
Base Current
DC
10
IB
Pulse
Total Power Dissipation (Tc=25 C)
PD
75
Operating Junction Temperature
TJ
+150
Operating Junction and Storage Temperature Range
TSTG
- 65 to +150
Thermal Resistance Junction to Case
Rjc
1.65
C/W
65
C/W
Thermal Resistance Junction to Ambient
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%
TS5305D Preliminary
Rja
1-1
2004/09 rev. B
Preliminary
Electrical Characteristics
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC = 1mA, IB = 0
BVCBO
750
--
--
Collector-Emitter Breakdown Voltage
IC = 5mA, IE = 0
BVCEO
400
--
--
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
BVEBO
--
--
Collector Cutoff Current
VCB = 500V, IE = 0
ICBO
--
--
10
uA
Emitter Cutoff Current
VEB = 9V, IC = 0
IEBO
--
--
10
uA
Collector-Emitter Saturation Voltage
IC / IB = 1.0A / 0.2A
VCE(SAT)1
--
--
0.3
IC / IB = 2.0A / 0.5A
VCE(SAT)2
--
--
0.5
IC / IB = 4.0A / 1.0A
VCE(SAT)3
--
--
1.2
IC / IB = 1.0A / 0.2A
VCB(SAT)1
--
--
1.0
IC / IB = 2.0A / 0.5A
VCB(SAT)2
--
--
1.1
VCE = 5V, IC = 0.5A
hFE 1
15
20
--
VCE = 5V, IC = 2A
hFE 2
10
--
--
Base-Emitter Saturation Voltage
DC Current Gain
Turn On Time
VCC = 250V, IC = 2A,
tON
--
--
0.5
uS
Storage Time
IB1 = IB2 = 0.4A, tp= 25uS
tSTG
--
--
uS
Fall Time
Duty cycle < 1%
tF
--
--
0.2
uS
Fall Time
IC = 3A
tF
--
--
700
nS
Forward Voltage
IC = 3A
Vf
--
--
1.4
Doide
Note : pulse test: pulse width <=300uS, duty cycle <=2%
TS5305D Preliminary
2-2
2004/09 rev. B
Preliminary
TO-220 Mechanical Drawing
K
L
DIM
A
B
C
D
E
F
G
H
I
J
MIN
10.000
3.240
2.440
0.381
2.345
4.690
12.700
8.382
14.224
MAX
10.500
4.440
2.940
6.350
1.106
2.715
5.430
14.732
9.017
16.510
MIN
0.394
0.128
0.096
0.015
0.092
0.092
0.500
0.330
0.560
MAX
0.413
0.175
0.116
0.250
0.040
0.058
0.107
0.581
0.355
0.650
K
L
M
N
O
P
3.556
0.508
27.700
2.032
0.255
5.842
4.826
1.397
29.620
2.921
0.610
6.858
0.140
0.020
1.060
0.080
0.010
0.230
0.190
0.055
1.230
0.115
0.024
0.270
C
P
J
I
M
D
H
F
G
TO-220 DIMENSION
MILLIMETERS
INCHES
TO-263 Mechanical Drawing
E
F
I
H
C
G
TS5305D Preliminary
3-3
DIM
A
B
C
D
E
F
G
H
I
J
TO-263 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
10.000
10.500
0.394
0.413
14.605
15.875
0.575
0.625
0.508
0.991
0.020
0.039
2.420
2.660
0.095
0.105
4.064
4.830
0.160
0.190
1.118
1.400
0.045
0.055
0.450
0.730
0.018
0.029
8.280
8.800
0.325
0.346
1.140
1.400
0.044
0.055
1.480
1.520
0.058
0.060
2004/09 rev. B
