Silicon on Plastic : Seminar Report and PPT for ECE Stu...
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Silicon-on-Plastic
(CTRL-D)
Abstract
of
Silicon on Plastic
Are you interested in
this topic.Then mail to
us immediately to get
the full report.
email :contactv2@gmail.com
The
plastic
substrates
are
thinner, lighter,
shatterproof,
exible, rollable
and
foldable,
making Siliconon-Plastic
an
enabling
technology
for
new
applications/products. This paper studies the development
of Silicon on Plastic technology. Advances in poly-silicon
technology have expanded TFT (THIN FILM TRANSISTORS)
technology to high-speed electronics applications such as
Smart Cards, RFID tags, portable imaging devices, photovoltaic devices and solid-state lighting and other integrated
circuit functions.
The challenge of Silicon-on-Plastic technology is to
overcome the fact that plastic melts at the temperature
required to build transistors in conventional TFT processes.
Technological innovations have been made to accommodate
silicon processing at low temperatures. T his paper
describes an innovative ultra-low temperature poly-silicon
Monday 24 February 2014 08:51 PM
Silicon on Plastic : Seminar Report and PPT for ECE Stu...
2 of 4
http://www.seminarsonly.com/electronics/Silicon-on-Plast...
TFT process on plastic substrates , Key technologies
includes near room-temperature silicon and oxide
deposition steps, laser crystallization and dopant activation.
Manufacturing
issues
related
to
plastic
material
compatibility in a TFT process are reviewed. Lamination and
de-lamination of plastic wafers to glass carrier wafers for
manufacturability is discussed. An active matrix TFT
backplane will be fabricated with an OLED (Organic Light
Emitting Diode) display to demonstrate this technology.
Introduction of Silicon on Plastic
Currently, amorphous silicon thin lm transistors (TFT's) on
glass are predominantly used in the at panel display
industry for notebook computers, mobile phones, PDA's
(Personal Digital Assistant), and other handheld devices.
Today, at panels made by amorphous TFT technology are
replacing desktop computer CRT (Cathode Ray Tube)
monitors at an ever-increasing rate. Amorphous TFT
technology applications are limited due to its inherently low
electron mobility. Applications that require integration of
display drivers such as hand-held camcorder and cell phone
displays are using poly-silicon based TFT's for cost and
space savings. This eliminates the need for costly assembly
of conventional silicon chips onto the amorphous TFT
display panels. Advances in poly-silicon technology have
expanded TFT technology to high-speed electronics
applications such as Smart Cards, RFID tags and other
integrated circuit functions.
Recently developed ultra low-temperature polysilicon TFT
technology can be applaid on both glass and plastic
substrates. The plastic substrates are thinner, lighter,
shatterproof, exible, rollable and foldable, making siliconon-plastic
an
enabling
technology
for
new
applications/products. Some of the possibilities are
roll-up/down displays, lightweight, thin wall-mounted TVs,
electronic newspapers, and wearable display/computing
devices. Moreover, plastic substrates oer the potential of
roll-to-roll (R2R) manufacturing which can reduce
manufacturing cost substantially compared to conventional
plate-to-plate (P2P) methods. Other possibilities include
smart cards, RFID tags, and portable imaging devices,
photo-voltaic devices and solid-state lighting.
The challenge of silicon-on-plastic technology is to overcome
the fact that plastic melts at the temperature required to
build transistors in conventional TFT processes. The ultra
low-temperature process is compatible with plastic
Monday 24 February 2014 08:51 PM
Silicon on Plastic : Seminar Report and PPT for ECE Stu...
3 of 4
http://www.seminarsonly.com/electronics/Silicon-on-Plast...
substrates and oers good TFT performance. Technological
innovations have been made to accommodate silicon
processing at low temperatures.
Low temperature
deposition :
(<
100
C)
gate
oxide
A proprietary deposition machine and a compatible process
were developed to deposit high quality TFT gate oxides at
sub-100 C temperatures. It is a special PECVD (PlasmaEnhanced Chemical Vapor Deposition) system with an added
plasma source conguration akin to ECR (Electron
Cyclotron Resonance) to generate high-density plasma at
low temperature. The process is optimized to provide
high-density plasma for silicon dioxide deposition using
SiH4 and O2. The gate oxide lm at 100 nm thickness has a
breakdown voltage of more than 70V, while the gate leakage
current density is less than 60 nA/cm2 at 20-V bias.Asdeposited gate oxideshows good C-V characterstics .
1. A small amount of hysteresis is observed before annealing
takes place. A pre-oxidation plasma treatment step using a
mixture of H2 and O2 to grow a very thin oxide at the
interface between the deposited silicon and the gate oxide
with acceptable interface states was added to the process
ow. Suciently high-density plasma must be generated in
order to grow oxide with any signicant thickness. The
chuck is cooled to 20 C to keep the plastic temperature
below 100 C during the entire pre-oxidation and deposition
process. The cleanliness of the Si surface is critical prior to
the oxidation process.
The result exhibits the dierence between gate oxides with
and without pre-oxidation. With pre-oxidation, we obtain an
oxide C-V curve very close to the one calculated
theoretically.
Monday 24 February 2014 08:51 PM
Silicon on Plastic : Seminar Report and PPT for ECE Stu...
4 of 4
http://www.seminarsonly.com/electronics/Silicon-on-Plast...
A Xe-Cl excimer laser is used to crystallize sputtered silicon
on plastic, thereby forming large polysilicon grains for TFT's
with much higher mobility than its amorphous counterpart.
The extremely short laser pulses provide sucient energy to
melt the deposited Si, while the subsequent cooling forms a
polycrystalline structure. This crystallization technique is
similar to polysilicon formation on glass. The challenge with
plastic substrates is to melt the deposited silicon while
preserving the structural quality of the underlying base
material
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